IAUZ30N06S5L140

IAUZ30N06S5L140 INFINEON | Alldatasheet

Document overview

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Technical content

Features

• OptiMOS™ power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic level
• MSL1 up to 260°C peak reflow
• 175 °C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Drain current I D V GS=10 V, Chip limitation1,2) 30 A V GS=10V, DC current 30 T a=85 °C, V GS=10 V, R thJA on 2s2p2,3) 8 Pulsed drain current2) I D,pulse T C=25 °C, t p= 100 µs 85 Avalanche energy, single pulse2) E AS I D=15 A 27 mJ Avalanche current, single pulse I AS - 30 A Gate source voltage V GS - ±16 V Power dissipation P tot T C=25 °C 33 W Operating and storage temperature T j, T stg - -55 ... +175 °C Value VDS 60 V RDS(on),max 14 mW ID 30 A Product Summary Type Package Marking IAUZ30N06S5L140 PG-TSDSON-8-32 5N6L140 PG-TSDSON-8-32 Rev. 1.0 page 1 2020-05-07

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 4.6 K/W Thermal resistance, junction - ambient3) R thJA - - 37.2 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=1mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=10µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=60V, V GS=0V, T j=25°C - - 1 µA V DS=60V, V GS=0V, Gate-source leakage current I GSS V GS=16V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=15A - 16.3 19.6 mW V GS=10V, I D=15A - 11.2 14 Gate resistance2) R G - - 1.4 - W Values Rev. 1.0 page 2 2020-05-07

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 683 888 pF Output capacitance C oss - 136 177 Reverse transfer capacitance Crss - 10 15 Turn-on delay time t d(on) - 1.6 - ns Turn-off delay time t d(off) - 4.1 - Rise time t r - 1.0 - Fall time t f - 1.8 - Gate Charge Characteristics2) Gate to source charge Q gs - 2.3 2.9 nC Gate to drain charge Q gd - 1.6 2.4 Gate charge total Q g - 9.4 12.2 Gate plateau voltage V plateau - 3.3 - V Reverse Diode Diode continous forward current2) I S T C=25°C - - 30 A Diode pulse current2) I S,pulse T C=25 °C, t p= 100 µs - - 85 Diode forward voltage V SD V GS=0V, I F=15A, T j=25°C - 0.8 1.1 V Reverse recovery time2) t rr - 26 - ns Reverse recovery charge2) Q rr - 18 - nC 3) Device on a four-layer 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5-7). PCB is vertical in still air. 2) The parameter is not subject to production test - verified by design/characterization. 1) Practically the current is limited by the overall system design including the customer-specific PCB. Values V GS=0V, V DS=30V, f =1MHz V DD=30V, V GS=10V, I D=15A, R G,ext=3.5W V DD=30V, I D=15A, V GS=0 to 10V V R=30V, I F=30A, di F/dt =100A/µs Rev. 1.0 page 3 2020-05-07

1 Power dissipation 2 Drain current

P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 ZthJC [K/W] tp [s] 1 µs 10 µs 100 µs 150 µs 100 0.1 1 10 100 ID [A] VDS [V] 0 50 100 150 200 Ptot [W] TC [°C] 0 50 100 150 200 ID [A] TC [°C] Rev. 1.0 page 4 2020-05-07

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); parameter: T j parameter: ID, VGS -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] VGS=4.5V, ID=15A VGS=10V, ID=15A 4 V 4.5 V 5 V 6 V 10 V 120 160 0 1 2 3 4 5 6 ID [A] VDS [V] 4 V 4.5 V 5 V 6 V 10 V 0 20 40 60 80 100 RDS(on) [mW] ID [A] -55 °C 25 °C 175 °C 100 ID [A] VGS [V] Rev. 1.0 page 5 2020-05-07

9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D

11 Typical forward diode characteristics 12 Avalanche characteristics

IF = f(VSD) I AS= f(t AV) parameter: T j parameter: Tj(start) 25 °C175 °C 100 101 102 103 IF [A] VSD [V] 10 µA 100 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 102 103 0 10 20 30 40 50 60 C [pF] VDS [V] 101 25 °C 100 °C 150 °C 100 0.1 1 10 100 1000 IAV [A] tAV [µs] 25 °C175 °C 100 101 102 103 IF [A] VSD [V] Rev. 1.0 page 6 2020-05-07

13 Avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 15 A pulsed parameter: V DD V GS Qgate V gs(th) Qg(th) Qgs Qgd Qsw Qg -55 -15 25 65 105 145 VBR(DSS) [V] Tj [°C] 12 V 30 V 0 2 4 6 8 10 VGS [V] Qgate [nC] 48V 30 A 15 A 7.5 A 25 75 125 175 EAS [mJ] Tj [°C] Rev. 1.0 page 7 2020-05-07

Rev. 1.0 page 8 2020-05-07

81726 Munich, Germany

© Infineon Technologies AG 2020 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2020-05-07

Revision History

Revision 1.0 Changes Final Data Sheet07.05.2020 Date Rev. 1.0 page 10 2020-05-07