IAUTN12S5N018T INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 12

Technical content

Features

  • OptiMOS™ power MOSFET for automotive applications
  • N-channel – enhancement mode – normal level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • RoHS compliant
  • 100% avalanche tested
  • Very low reverse recovery charge (Qrr) Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Data Sheet Rev 1.01 www.infineon.com/mosfets 2023-08-29 PG-HDSOP-16-1Tab91161 IAUTN12S5N018T VDS120VRDS(on)1.8mΩID (chip limited)309AProduct SummaryTypePackageMarkingIAUTN12S5N018TPG-HDSOP-16-15N12N018 Please read the Important Notice and Warnings at the end of this document 1698

OptiMOS™ 5 Automotive Power MOSFET, 120 V IAUTN12S5N018T Table of Contents Data Sheet Rev 1.01 2023-08-29

OptiMOS™ 5 Automotive Power MOSFET, 120 V IAUTN12S5N018T Maximum ratings at Tj=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID VGS=10 V, Chip limitation1,2) VGS=10V, DC current3) Ta=100 °C, VGS=10 V, RthJA on top2,4) Pulsed drain current2) ID,pulse TC=25 °C, tp= 100 µs Avalanche energy, single pulse2) EAS ID=150 A Avalanche current, single pulse IAS – Gate source voltage VGS – Power dissipation Ptot TC=25 °C Operating and storage temperatureTj, Tstg – IEC climatic category; DIN IEC 68-1 – – Data Sheet 3 Rev 1.01 2023-08-29 W 510 300 ±20 358 -55 ... +175 55/175/56 A V Unit A mJ 300 1150 Value 309

OptiMOS™ 5 Automotive Power MOSFET, 120 V IAUTN12S5N018T Thermal characteristics2) Parameter Symbol Conditions Unit min. typ. max. Thermal resistance, junction - case Top - - 0.42 K/W Bottom (Pin 1-7) - 9 - Bottom (Pin 9-16) - 3 - Top - 2.8 - Bottom (through PCB) - 40 -

Electrical characteristics

at Tj=25 °C, unless otherwise specified Parameter Symbol Conditions Unit min. typ. max. Static characteristics Drain-source breakdown voltage V(Br)DSS VGS=0 V, ID=1 mA 120 – – V Gate threshold voltage VGS(th) VDS=VGS, ID=270 µA 2.6 3.1 3.6 Zero gate voltage drain current IDSS VDS=120 V, VGS=0 V, Tj=25 °C – 0.3 3 µA VDS=120 V, VGS=0 V, Tj=100 °C2) – 10 100 Gate-source leakage current IGSS VGS=20 V, VDS=0 V – – 100 nA Drain-source on-state resistance RDS(on) VGS=7 V, ID=50 A – 2.0 2.8 mΩ VGS=10 V, ID=100 A – 1.5 1.8 Gate resistance2) RG – – 1.1 – Ω Data Sheet 4 Rev 1.01 2023-08-29 Values Values RthJC Thermal resistance, junction - ambient4) RthJA

OptiMOS™ 5 Automotive Power MOSFET, 120 V IAUTN12S5N018T Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance Ciss – 8260 10740 pF Output capacitance Coss – 2369 3080 Reverse transfer capacitance C rss – 45 68 Turn-on delay time td(on) – 28 – ns Rise time tr – 55 – Turn-off delay time td(off) – 45 – Fall time tf – 53 – Gate Charge Characteristics2) Gate to source charge Qgs – 43 55 nC Gate to drain charge Qgd – 23 35 Gate charge total Qg – 111 145 Gate plateau voltage Vplateau – 5.2 – V Reverse Diode Diode continous forward current2) IS TC=25 °C – – 309 A Diode pulse current2) IS,pulse TC=25 °C, tp= 100 µs – – 1150 Diode forward voltage VSD VGS=0 V, IF=100 A, Tj=25 °C – 0.85 0.95 V Reverse recovery time2) trr – 45 67 ns Reverse recovery charge2) Qrr – 34 68 nC Data Sheet Rev 1.01 5 2023-08-29 Values VGS=0 V, VDS=60 V, f=1 MHz VDD=60 V, VGS=10 V, ID=100 A, RG=3.5 Ω VDD=60 V, ID=100 A, VGS=0 to 10 V 2) The parameter is not subject to production testing – specified by design. 4) Device on a four-layer 2s2p FR4 PCB with topside cooling. Thermal insulation material is 100 µm thick and has a conductivity of 0.7 W/m/K. Top surface of heat sink is fixed at ambient temperature. Bottom surface of PCB is left at free convection. Values may vary depending on the customer-specific design. 3) Current is limited by chip. 1) Practically the current is limited by the overall system design including the customer-specific PCB. VR=60 V, IF=50A, diF/dt=100 A/µs

OptiMOS™ 5 Automotive Power MOSFET, 120 V IAUTN12S5N018T Electrical characteristics diagrams

1 Power dissipation 2 Drain current

Ptot = f(TC); VGS ≥ 6 V ID = f(TC); VGS ≥ 6 V 3 Safe operating area 4 Max. transient thermal impedance ID = f(VDS); TC = 25 °C; D = 0; parameter: tp ZthJC = f(tp); parameter: D=tp/T Data Sheet 6 Rev 1.01 2023-08-29 1 µs 10 µs 100 µs 1 ms 10-1 100 101 102 103 100 101 102 103 104 ID[A]VDS[V] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 ZthJC[K/W]tp [s] 01002003004000 50 100 150 200Ptot[W]TC[°C]DC currentChip limit05010015020025030035025 75 125 175ID[A]TC[°C]

OptiMOS™ 5 Automotive Power MOSFET, 120 V IAUTN12S5N018T 5 Typ. output characteristics 6 Typ. drain-source on-state resistance ID = f(VDS); Tj = 25 °C; parameter: VGS RDS(on) = f(ID); Tj = 25 °C; parameter: VGS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance ID = f(VGS); VDS = 6V: parameter: Tj RDS(on) = f(Tj); parameter: ID, VGS Data Sheet 7 Rev 1.01 2023-08-29 -55 °C 25 °C 175 °C 0200400600800100012003 5 7 9ID[A]VGS[V] 6.5 V 5.5 V 6 V 7 V 5 V 10 V 0200400600800100012000 1 2 3 4 5 6 7ID[A]VDS[V] 6 V 10 V 6.5 V 5 V 5.5 V 7 V 123456789100 100 200 300RDS(on)[mW]ID[A]

OptiMOS™ 5 Automotive Power MOSFET, 120 V IAUTN12S5N018T 9 Typ. gate threshold voltage 10 Typ. capacitances VGS(th) = f(Tj); VGS = VDS; parameter: ID C= f(VDS); VGS = 0 V; f = 1 MHz 11 Typical forward diode characteristics 12 Typ. avalanche characteristics IF = f(VSD); parameter: Tj IAS = f(tAV); parameter: Tj(start) Data Sheet 8 Rev 1.01 2023-08-29 25 °C 100 °C 150 °C 1010010001 10 100 1000IAV[A]tAV[µs] 25 °C 175 °C 100 101 102 103 104 Ciss Coss Crss 101 102 103 104 105 0 50 100C[pF]VDS[V] 270 µA 2700 µA 11.522.533.54-60 -20 20 60 100 140 180VGS(th)[V]Tj [°C]

OptiMOS™ 5 Automotive Power MOSFET, 120 V IAUTN12S5N018T

13 Typical avalanche energy 14 Drain-source breakdown voltage

EAS = f(Tj); parameter: ID V(Br)DSS = f(Tj); ID = 1 mA 15 Typ. gate charge 16 Gate charge waveforms VGS = f(Qgate); ID = 100 A pulsed; parameter: VDD Data Sheet 9 Rev 1.01 2023-08-29 114115116117118119120121122123124125126127128129130-60 -20 20 60 100 140 180V(Br)DSS[V]Tj [°C]24 V60 V96 V0123456789100 40 80 120VGS[V]Qgate[nC] 300 A 150 A 75 A 0400800120025 75 125 175EAS[mJ]Tj [°C]VGSQgateQgsQgdQgVGSQgateQgsQgdQg

OptiMOS™ 5 Automotive Power MOSFET, 120 V IAUTN12S5N018T Package Outline Footprint Packaging Data Sheet 10 Rev. 1.0 2022-12-15

OptiMOS™ 5 Automotive Power MOSFET, 120 V IAUTN12S5N018T

Revision History

Revision 1.0 Revision 1.01 Data Sheet 11 Rev 1.01 2023-08-29 Changes Final data sheet Reduced typical on-state resistance RDS(on) Date 2023-08-29 2022-12-15

Edition 2023-08-29Published byInfineon Technologies AG81726 Munich, Germany© 2023 Infineon Technologies AGAll Rights Reserved.Do you have any questions about any aspect of this document?Email: erratum@infineon.comDocument referenceIAUTN12S5N018T-Data-Sheet-101-Infineon TrademarksAll referenced product or service names and trademarks are the property of their respective owners.