IAUT300N08S5N014

IAUT300N08S5N014 INFINEON | Alldatasheet

Document overview

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Technical content

Features

• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25°C, V GS=10V1) 300 A T C=100 °C, V GS=10 V2) 230 Pulsed drain current2) I D,pulse T C=25 °C 1200 Avalanche energy, single pulse2) E AS I D=150 A 600 mJ Avalanche current, single pulse I AS - 300 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value VDS 80 V RDS(on) 1.4 mW ID 300 A Product Summary Type Package Marking IAUT300N08S5N014 P/G-HSOF-8-1 5N08014 Gate pin 1 Drain Tab Source pin 2 - 8 P/G -HSOF-8-1 Tab Tab Rev. 1.0 page 1 2017-12-15

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.5 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage2) V (BR)DSS V GS=0 V, I D=1 mA 80 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=230 µA 2.2 3 3.8 Zero gate voltage drain current2) I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=40 V, V GS=0 V, T j=85 °C2) - 1 20 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=6 V, I D=75 A - 1.6 2.1 mΩ V GS=10 V, I D=100 A - 1.1 1.4 Values Rev. 1.0 page 2 2017-12-15

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 10137 13178 pF Output capacitance C oss - 1626 2114 Reverse transfer capacitance Crss - 71 106 Turn-on delay time t d(on) - 25 - ns Rise time t r - 15 - Turn-off delay time t d(off) - 52 - Fall time t f - 46 - Gate Charge Characteristics2) Gate to source charge Q gs - 46 60 nC Gate to drain charge Q gd - 30 47 Gate charge total Q g - 144 187 Gate plateau voltage V plateau - 4.5 - V Reverse Diode Diode continous forward current2) I S - - 300 A Diode pulse current2) I S,pulse - - 1200 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.9 1.2 V Reverse recovery time2) t rr - 83 - ns Reverse recovery charge2) Q rr - 156 - nC Values V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=100 A, R G=3.5 W V DD=40 V, I D=100 A, V GS=0 to 10 V 2) Defined by design. Not subject to production test. 1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 327A at 25°C. V R=40 V, I F=50A, di F/dt =100 A/µs T C=25 °C Rev. 1.0 page 3 2017-12-15

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 10000 0.1 1 10 100 ID [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 ZthJC [K/W] tp [s] 100 150 200 250 300 0 50 100 150 200 Ptot [W] TC [°C] 100 150 200 250 300 350 0 50 100 150 200 ID [A] TC [°C] Rev. 1.0 page 4 2017-12-15

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 0.5 1.5 2.5 -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] -55 °C 25 °C 175 °C 200 400 600 800 1000 1200 ID [A] VGS [V] 5 V 6 V 7 V 8 V 9 V 10 V 200 400 600 800 1000 1200 0 1 2 3 4 5 6 7 ID [A] VDS [V]

4.5 V 5 V

1.5 2.5 3.5 0 100 200 300 RDS(on) [mW] ID [A] 10 V Rev. 1.0 page 5 2017-12-15

9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 11 Typical forward diode characteristics 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 25 °C 100 °C 150 °C 100 1000 1 10 100 1000 IAV [A] tAV [µs] 25 °C 175 °C 100 101 102 103 IF [A] VSD [V] Ciss Coss Crss 102 103 104 105 0 10 20 30 40 50 60 70 80 C [pF] VDS [V] 230 µA 2300 µA 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Rev. 1.0 page 6 2017-12-15

13 Typical avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 100 A pulsed parameter: V DD -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 16 V 40 V 0 50 100 150 VGS [V] Qgate [nC] 64 V 300 A 150 A 75 A 300 600 900 1200 25 75 125 175 EAS [mJ] Tj [°C] V GS Qgate Q gs Qgd Q g V GS Qgate Q gs Qgd Q g Rev. 1.0 page 7 2017-12-15

81726 Munich, Germany

© Infineon Technologies AG 2017 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2017-12-15

Revision History

Version 1.0 Changes Final Data Sheet Date 15.12.2017 Rev. 1.0 page 9 2017-12-15