IAUS300N10S5N015T INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • OptiMOS™ power MOSFET for automotive applications
  • N-channel – Enhancement mode – Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D V GS=10 V, Chip limitation1,2) 350 A V GS=10V, DC current3) 300 T a=85 °C, V GS=10 V, R thJA on 2s2p2,4) 103 Pulsed drain current2) I D,pulse T C=25 °C, t p= 100 µs 1272 Avalanche energy, single pulse2) E AS I D=150 A 652 mJ Avalanche current, single pulse I AS - 300 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 375 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value VDS 100 V RDS(on) 1.5 mW ID 300 A Product Summary Type Package Marking IAUS300N10S5N015T PG-HDSOP-16-2 5N10015 PG-HDSOP-16-2 Rev. 1.0 page 1 2020-10-01

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Top - - 0.4 K/W Bottom (Pin 1-7) - 9 - Bottom (Pin 9-16) - 3 - Top - 2.8 - Bottom (through PCB) - 40 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=275 µA 2.2 3.0 3.8 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=50 V, V GS=0 V, T j=85 °C2) - 1 20 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=6 V, I D=75 A - 1.6 2.1 mΩ V GS=10 V, I D=100 A - 1.3 1.5 Gate resistance2) R G - - 1.5 - W R thJA Values Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient4) Rev. 1.0 page 2 2020-10-01

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 12316 16011 pF Output capacitance C oss - 1920 2496 Reverse transfer capacitance Crss - 84 126 Turn-on delay time t d(on) - 29 - ns Rise time t r - 15 - Turn-off delay time t d(off) - 70 - Fall time t f - 48 - Gate Charge Characteristics2) Gate to source charge Q gs - 52 68 nC Gate to drain charge Q gd - 33 50 Gate charge total Q g - 166 216 Gate plateau voltage V plateau - 4.4 - V Reverse Diode Diode continous forward current2) I S T C=25 °C - - 300 A Diode pulse current2) I S,pulse T C=25 °C, t p= 100 µs - - 2398 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.9 1.3 V Reverse recovery time2) t rr - 90 - ns Reverse recovery charge2) Q rr - 220 - nC Values V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=100 A, R G=3.5 W V DD=50 V, I D=100 A, V GS=0 to 10 V 2) The parameter is not subject to production testing – specified by design. 4) Device on a four-layer 2s2p FR4 PCB with topside cooling. Thermal insulation material is 100 µm thick and has a conductivity of 0.7 W/mK. Top surface of heat sink is fixed at ambient temperature. Bottom surface of PCB is left at free convection. Values may vary depending on the customer-specific design. 3) Current is limited by the bondwires. 1) Practically the current is limited by the overall system design including the customer-specific PCB. V R=50 V, I F=50A, di F/dt =100 A/µs Rev. 1.0 page 3 2020-10-01

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 10000 0.1 1 10 100 ID [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 ZthJC [K/W] tp [s] 100 200 300 400 0 50 100 150 200 Ptot [W] TC [°C] DC current Chip limit 100 150 200 250 300 350 400 0 50 100 150 200 ID [A] TC [°C] Rev. 1.0 page 4 2020-10-01

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j) parameter: T j parameter: I D, V GS VGS=10V, ID=100A VGS=6V, ID=75A 0.8 1.2 1.4 1.6 1.8 2.2 2.4 2.6 2.8 -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] -55 °C 25 °C 175 °C 200 400 600 800 1000 1200 2 4 6 8 ID [A] VGS [V] 5 V 5.5 V 6 V 6.5 V 7 V 10 V 200 400 600 800 1000 1200 0 1 2 3 4 5 6 7 ID [A] VDS [V] 5 V 7 V 5.5 V 6 V 6.5 V 10 V 1.2 1.4 1.6 1.8 2.2 0 50 100 150 RDS(on) [mW] ID [A] Rev. 1.0 page 5 2020-10-01

9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 11 Typical forward diode characteristics 12 Typ. avalanche characteristics I F = f(V SD ) I AS = f(t AV) parameter: T j parameter: T j(start) 25 °C 100 °C 150 °C 100 1000 1 10 100 1000 IAV [A] tAV [µs] 25 °C 175 °C 100 101 102 103 104 IF [A] VSD [V] Ciss Coss Crss 102 103 104 105 0 25 50 75 100 C [pF] VDS [V] 275 µA 2750 µA 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Rev. 1.0 page 6 2020-10-01

13 Typical avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 100 A pulsed parameter: V DD 100 101 102 103 104 105 106 107 108 109 110 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 20 V 80 V 50 V 0 40 80 120 160 VGS [V] Qgate [nC] 300 A 150 A 75 A 400 800 1200 1600 25 75 125 175 EAS [mJ] Tj [°C] VGS Qgate Q gs Qgd Q g VGS Qgate Q gs Qgd Q g Rev. 1.0 page 7 2020-10-01

Rev. 1.0 page 8 2020-10-01

81726 Munich, Germany

© Infineon Technologies AG 2020 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2020-10-01

Revision History

Version 1.0 Changes Final Datasheet Date 01.10.2020 Rev. 1.0 page 10 2020-10-01