IAUMN08S5N013G INFINEON | Alldatasheet

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Technical content

Features

  • OptiMOS™ power MOSFET for automotive applications
  • N-channel – Enhancement mode – Normal Level Insert image
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL2 up to 260°C peak reflow
  • 175°C operating temperature
  • RoHS compliant
  • 100% Avalanche tested Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Data Sheet Rev. 1.0 www.infineon.com/mosfets 2024-05-02 IAUMN08S5N013G VDS80VRDS(on)1.3mΩID (chip limited)350AProduct SummaryTypePackageMarkingIAUMN08S5N013GPG-HSOG-4-15N08N013 PG-HSOG-4-1 Please read the Important Notice and Warnings at the end of this document 1 2 3 4 TAB

OptiMOS™ 5 Automotive Power MOSFET, 80 V IAUMN08S5N013G Table of Contents Data Sheet Rev. 1.0 2024-05-02

OptiMOS™ 5 Automotive Power MOSFET, 80 V IAUMN08S5N013G Maximum ratings at Tj=25 °C, unless otherwise specified Continuous drain current ID VGS=10 V, Chip limitation1,2) VGS=10V, DC current3) Ta=100 °C, VGS=10 V, RthJA on 2s2p2,4) Pulsed drain current2) ID,pulse TC=25 °C, tp= 100 µs Avalanche energy, single pulse2) EAS ID=125 A Avalanche current, single pulse IAS – Gate source voltage VGS – Power dissipation Ptot TC=25 °C Operating and storage temperatureTj, Tstg – Data Sheet 3 Rev. 1.0 mJ 1400 Value 350 Unit A Parameter Symbol Conditions 2024-05-02 W 535 250 ±20 307 -55 ... +175 A V 250

OptiMOS™ 5 Automotive Power MOSFET, 80 V IAUMN08S5N013G Thermal characteristics2) Parameter Symbol Conditions Unit min. typ. max. Thermal resistance, junction - caseRthJC – – – 0.49 K/W Thermal resistance, junction - ambient3) RthJA – – 23 –

Electrical characteristics

at Tj=25 °C, unless otherwise specified Parameter Symbol Conditions Unit min. typ. max. Static characteristics Drain-source breakdown voltage V(Br)DSS VGS=0 V, ID=1 mA 80 – – V Gate threshold voltage VGS(th) VDS=VGS, ID=214 µA 2.2 3 3.8 Zero gate voltage drain current IDSS VDS=80 V, VGS=0 V, Tj=25 °C – – 1 µA VDS=80 V, VGS=0 V, Gate-source leakage current IGSS VGS=20 V, VDS=0 V – – 100 nA Drain-source on-state resistance RDS(on) VGS=6 V, ID=50 A – 1.6 1.8 mΩ VGS=10 V, ID=100 A – 1.0 1.3 Gate resistance2) RG – – 1.4 – Ω Data Sheet 4 Rev. 1.0 2024-05-02 Values Values

OptiMOS™ 5 Automotive Power MOSFET, 80 V IAUMN08S5N013G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance Ciss – 9612 12496 pF Output capacitance Coss – 1657 2160 Reverse transfer capacitance C rss – 84 130 Turn-on delay time td(on) – 24 – ns Rise time tr – 15 – Turn-off delay time td(off) – 48 – Fall time tf – 51 – Gate Charge Characteristics2) Gate to source charge Qgs – 44 57 nC Gate to drain charge Qgd – 30 45 Gate charge total Qg – 138 179 Gate plateau voltage Vplateau – 4.6 – V Reverse Diode Diode continous forward current2) IS TC=25 °C – – 250 A Diode pulse current2) IS,pulse TC=25 °C, tp= 100 µs – – 1400 Diode forward voltage VSD VGS=0 V, IF=100 A, Tj=25 °C – 0.9 1.2 V Reverse recovery time2) trr – 49 73 ns Reverse recovery charge2) Qrr – 55 109 nC 3) Current is limited by package. Data Sheet Rev. 1.0 5 2024-05-02 Values VGS=0 V, VDS=40 V, f=1 MHz VDD=40 V, VGS=10 V, ID=100 A, RG=3.5 Ω VDD=40 V, ID=100 A, VGS=0 to 10 V 2) The parameter is not subject to production testing – specified by design. 4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. 1) Practically the current is limited by the overall system design including the customer-specific PCB. VR=40 V, IF=50A, diF/dt=100 A/µs

OptiMOS™ 5 Automotive Power MOSFET, 80 V IAUMN08S5N013G Electrical characteristics diagrams

1 Power dissipation 2 Drain current

Ptot = f(TC); VGS ≥ 6 V ID = f(TC); VGS ≥ 6 V 3 Safe operating area 4 Max. transient thermal impedance ID = f(VDS); TC = 25 °C; D = 0; parameter: tp ZthJC = f(tp); parameter: D=tp/T Data Sheet 6 Rev. 1.0 2024-05-02 01002003004000 50 100 150 200Ptot[W]TC[°C]DC currentChip limit0501001502002503003504004500 50 100 150 200ID[A]TC[°C]

OptiMOS™ 5 Automotive Power MOSFET, 80 V IAUMN08S5N013G 5 Typ. output characteristics 6 Typ. drain-source on-state resistance ID = f(VDS); Tj = 25 °C; parameter: VGS RDS(on) = f(ID); Tj = 25 °C; parameter: VGS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance ID = f(VGS); VDS = 6V: parameter: Tj RDS(on) = f(Tj); parameter: ID, VGS Data Sheet 7 Rev. 1.0 2024-05-02

OptiMOS™ 5 Automotive Power MOSFET, 80 V IAUMN08S5N013G 9 Typ. gate threshold voltage 10 Typ. capacitances VGS(th) = f(Tj); VGS = VDS; parameter: ID C= f(VDS); VGS = 0 V; f = 1 MHz 11 Typical forward diode characteristics 12 Typ. avalanche characteristics IF = f(VSD); parameter: Tj IAS = f(tAV); parameter: Tj(start) Data Sheet 8 Rev. 1.0 2024-05-02 CissCossCrss1011021031041050 20 40 60 80C[pF]VDS[V]214 µA2140 µA11.522.533.54-60 -20 20 60 100 140 180VGS(th)[V]Tj[°C]

OptiMOS™ 5 Automotive Power MOSFET, 80 V IAUMN08S5N013G

13 Typical avalanche energy 14 Drain-source breakdown voltage

EAS = f(Tj); parameter: ID V(Br)DSS = f(Tj); ID = 1 mA 15 Typ. gate charge 16 Gate charge waveforms VGS = f(Qgate); ID = 100 A pulsed; parameter: VDD Data Sheet 9 Rev. 1.0 2024-05-02 767778798081828384858687-60 -20 20 60 100 140 180V(Br)DSS[V]Tj[°C]16 V40 V64 V0123456789100 40 80 120 160VGS[V]Qgate[nC]

300 A150 A75 A0400800120025 75 125 175EAS[mJ]Tj[°C]VGSQgateQgsQgdQgVGSQgateQgsQgdQg

OptiMOS™ 5 Automotive Power MOSFET, 80 V IAUMN08S5N013G Package Outline Footprint Packaging Data Sheet 10 Rev. 1.0 2024-05-02

OptiMOS™ 5 Automotive Power MOSFET, 80 V IAUMN08S5N013G

Revision History

Revision 1.0 Data Sheet 11 Rev. 1.0 Date 02.05.2024 2024-05-02 Changes Final Data Sheet

Edition 2024-05-02Published byInfineon Technologies AG81726 Munich, Germany© 2024 Infineon Technologies AGAll Rights Reserved.Do you have any questions about any aspect of this document?Email: erratum@infineon.comDocument reference:IAUMN08S5N013G-Data-Sheet-01-Infineon TrademarksAll referenced product or service names and trademarks are the property of their respective owners.