IAUCN04S6N007TATMA1 INFINEON | Alldatasheet

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Technical content

Features

  • OptiMOS™ power MOSFET for automotive applications
  • N-channel – Enhancement mode – Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • RoHS compliant
  • 100% Avalanche tested
  • Top Side Cooling Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Pins 10 - 6 & Tab on Drain Data Sheet Rev 1.1 www.infineon.com/mosfets 2023-08-10 IAUCN04S6N007T VDS 40 V RDS(on) 0.75 mΩ ID (chip limited) 390 A Product Summary Type Package Marking IAUCN04S6N007T PG-LHDSO-10-3 6A4 PG-LHDSO-10-3 Please read the Important Notice and Warnings at the end of this document

OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUCN04S6N007T Table of Contents Data Sheet Rev 1.1 2023-08-10

OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUCN04S6N007T Maximum ratings at Tj=25 °C, unless otherwise specified Continuous drain current I D V GS=10 V, Chip limitation1,2) V GS=10V, DC current T a=85 °C, V GS=10 V, R thJH on 2s2p2,4) Pulsed drain current2) I D,pulse T C=25 °C, t p= 100 µs Avalanche energy, single pulse2) E AS I D=60 A Avalanche current, single pulse I AS – Gate source voltage V GS – Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg – Data Sheet 3 Rev 1.1 Parameter Symbol Conditions 2023-08-10 W 624 115 ±20 206 -55 ... +175 A V 120 mJ 1300 Value 390 Unit A

OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUCN04S6N007T Thermal characteristics2) Parameter Symbol Conditions Unit min. typ. max. Thermal resistance, junction - case R thJC – – 0.36 0.73 K/W Thermal characterization parameter, source pin5) y source – 5.3 – Thermal characterization parameter, drain pin6) y drain – 5.4 – Thermal resistance, junction - heatsink4) R thJH – 6.8 – Thermal resistance, junction - ambient3) R thJA – – 45 –

Electrical characteristics

at Tj=25 °C, unless otherwise specified Parameter Symbol Conditions Unit min. typ. max. Static characteristics Drain-source breakdown voltage V (Br)DSS V GS=0 V, I D=1 mA 40 – – V Gate threshold voltage V GS(th) V DS=V GS, I D=120 µA 2.2 2.6 3.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C – – 1 µA V DS=40 V, V GS=0 V, Gate-source leakage current I GSS V GS=20 V, V DS=0 V – – 100 nA Drain-source on-state resistance RDS(on) V GS=7 V, I D=60 A – 0.81 0.95 mΩ V GS=10 V, I D=60 A – 0.68 0.75 Gate resistance2) R G – – 0.97 – Ω Data Sheet 4 Rev 1.1 2023-08-10 Values Values

OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUCN04S6N007T Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss – 6950 9035 pF Output capacitance C oss – 2100 2730 Reverse transfer capacitance Crss – 98 147 Turn-on delay time t d(on) – 12 – ns Rise time t r – 7 – Turn-off delay time t d(off) – 33 – Fall time t f – 15 – Gate Charge Characteristics2) Gate to source charge Q gs – 26 34 nC Gate to drain charge Q gd – 19 29 Gate charge total Q g – 100 130 Gate plateau voltage V plateau – 3.9 – V Reverse Diode Diode continous forward current2) I S T C=25 °C – – 120 A Diode pulse current2) I S,pulse T C=25 °C, t p= 100 µs – – 1300 Diode forward voltage V SD V GS=0 V, I F=60 A, T j=25 °C – 0.8 1.1 V Reverse recovery time2) t rr – 46 – ns Reverse recovery charge2) Q rr – 42 – nC Data Sheet Rev 1.1 5 2023-08-10 6) Thermal characterization parameter, calculated as ydrain = (Tdrain - Tambient)/Pdis in condition of 4). Used to determine PCB temperature at drain pins for given power. Values V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=120 A, R G=3.5 Ω V DD=32 V, I D=120 A, V GS=0 to 10 V 2) The parameter is not subject to production testing – specified by design. 3) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7) without thermal vias. PCB is vertical in still air. 1) Practically the current is limited by the overall system design including the customer-specific PCB. V R=20 V, I F=50 A, di F/dt =100 A/µs 4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7) without thermal vias, heatsink of 71x110x2 mm is attached through TIM with 3.3 W/(m*K) and 400µm thickness to top side pad. Heatsink fixed to 85°C ambient temperature. 5) Thermal characterization parameter, calculated as ysource = (Tsource - Tambient)/Pdis in condition of 4). Used to determine PCB temperature at source pins for given power.

OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUCN04S6N007T Electrical characteristics diagrams

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; parameter: tp Z thJC = f(t p); parameter: D = tp/T Data Sheet 6 Rev 1.1 2023-08-10 1 µs 10 µs 100 µs 150 µs 100 1000 10000 0.1 1 10 100 ID [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 ZthJC [K/W] tp [s] 100 150 200 250 0 50 100 150 200 Ptot [W] TC [°C] DC current Chip limit 100 150 200 250 300 350 400 450 0 50 100 150 200 ID [A] TC [°C]

OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUCN04S6N007T 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; parameter: V GS R DS(on) = f(I D); T j = 25 °C; parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6 V: parameter: T j R DS(on) = f(T j); parameter: I D, V GS Data Sheet 7 Rev 1.1 2023-08-10 VGS=10 V, ID=60 A VGS=7 V, ID=60 A 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] -55°C 25 °C 175 °C 200 400 600 800 1000 1200 1400 ID [A] VGS [V] 4.5 V 5.5 V 6 V 7 V 5 V 10 V 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 0 1 2 3 4 5 6 7 ID [A] VDS [V] 6 V 10 V 4.5 V 5 V 5.5 V 7 V 0.5 0.7 0.9 1.1 1.3 1.5 0 100 200 300 RDS(on) [mW] ID [A]

OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUCN04S6N007T 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS; parameter: I D C = f(V DS); V GS = 0 V; f = 1 MHz 11 Typical forward diode characteristics 12 Typ. avalanche characteristics I F = f(V SD ); parameter: T j I AS = f(t AV); parameter: T j(start) Data Sheet 8 Rev 1.1 2023-08-10 25 °C 100 °C 150 °C 100 1000 1 10 100 1000 IAV [A] tAV [µs] 25 °C 175 °C 100 101 102 103 104 IF [A] VSD [V] Ciss Coss Crss 101 102 103 104 105 0 10 20 30 40 C [pF] VDS [V] 120 µA 1200 µA 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C]

OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUCN04S6N007T

13 Typical avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j); parameter: I D V (Br)DSS = f(T j); I D_typ = 1 mA 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 120 A pulsed; parameter: V DD Data Sheet 9 Rev 1.1 2023-08-10 -60 -20 20 60 100 140 180 V(Br)DSS [V] Tj [°C] 8 V 20 V 32 V 0 20 40 60 80 100 VGS [V] Qgate [nC] 60 A 30 A 115 A 250 500 750 1000 1250 1500 25 75 125 175 EAS [mJ] Tj [°C] V GS Qgate Q gs Qgd Q g V GS Qgate Q gs Qgd Q g

OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUCN04S6N007T Package Outline https://www.infineon.com/cms/en/product/packages/PG-LHDSO/PG-LHDSO-10-3 Footprint Packaging all dimensions in mm Data Sheet 10 Rev 1.1 2023-08-10

OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUCN04S6N007T

Revision History

Revision 1.1 Data Sheet 11 Rev 1.1 2023-08-10 Changes Final data sheet Date 10.08.2023

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