IAUC45N04S6L063H

IAUC45N04S6L063H INFINEON | Alldatasheet

Document overview

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Technical content

Features

• OptiMOS™ - power MOSFET for automotive applications
• Half-Bridge - N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested Maximum ratings per channel, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Drain current I D V GS=10V, Chip Limitation1,2) 59 A V GS=10V, DC current3) 45 Ta=85°C, VGS=10V, RthJA on 2s2p2,4) 15 Pulsed drain current2) I D,pulse T C=25°C, t p =100µs 134 Avalanche energy, single pulse2) E AS I D=9A, R g,min=25Ω 38 mJ Avalanche current, single pulse I AS R g,min=25Ω 9 A Gate source voltage V GS - ±16 V Power dissipation P tot T C=25°C 41 W Operating and storage temperature T j, T stg - -55 ... +175 °C Value VDS 40 V RDS(on),max 6.3 mW ID 45 A Product Summary Type Package Marking IAUC45N04S6L063H PG-TDSON-8-57 6N04L063 PG-TDSON-8-57 Rev. 1.0 page 1 2020-09-22

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 3.7 K/W Thermal resistance, junction - ambient4) R thJA - - 36 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=9µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=40V, V GS=0V, T j=25°C - - 1 µA V DS=40V, V GS=0V, T j=125°C2) - - 10 Gate-source leakage current I GSS V GS=16V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=22A - 7.4 8.5 mW V GS=10V, I D=22A - 5.2 6.3 Values Rev. 1.0 page 2 2020-09-22

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 596 775 pF Output capacitance C oss - 174 226 Reverse transfer capacitance Crss - 16 23 Turn-on delay time t d(on) - 2 - ns Rise time t r - 1 - Turn-off delay time t d(off) - 6 - Fall time t f - 3 - Gate Charge Characteristics2) Gate to source charge Q gs - 2.0 2.5 nC Gate to drain charge Q gd - 2.1 3.2 Gate charge total Q g - 10 13 Gate plateau voltage V plateau - 3.3 - V Reverse Diode Diode continous forward current2) I S T C=25°C - - 36 A Diode pulse current2) I S,pulse T C=25°C, t p =100µs - - 142 Diode forward voltage V SD V GS=0V, I F=22A, T j=25°C - 0.8 1.1 V Reverse recovery time2) t rr V R=20V, I F=45A, di F/dt =100A/µs - 20 - ns Reverse recovery charge2) Q rr - 8 - nC 4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. 3) The product can operate at specified current based on best practice to minimize electromigration at the solder joint. For rare events and inrush currents the value may be exceeded. 1) Practically the current is limited by overall system design including customer specific PCB. 2) The parameter is not subject to production test - specified by design. Values V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=45A, R G=3.5W V DD=32V, I D=45A, V GS=0 to 10V Rev. 1.0 page 3 2020-09-22

1 Power dissipation 2 Drain current

P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 ZthJC [K/W] tp [s] 1 µs 10 µs 100 µs 150 µs 100 1000 0.1 1 10 100 ID [A] VDS [V] 0 50 100 150 200 Ptot [W] TC [°C] Chip limit DC current 0 50 100 150 200 ID [A] TC [°C] Rev. 1.0 page 4 2020-09-22

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 22 A; V GS = 10 V parameter: T j -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 4.5 V 10 V 100 120 0 1 2 3 ID [A] VDS [V] 2.75 V 3.5 V 4.5 V 3 V 10 V 0 20 40 60 80 RDS(on) [mW] ID [A] -55 °C 25 °C 175 °C 100 120 140 1.5 2 2.5 3 3.5 4 4.5 ID [A] VGS [V] 2.75 V 3.5 V 3.0 V Rev. 1.0 page 5 2020-09-22

9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D

11 Typical forward diode characteristicis 12 Avalanche characteristics

IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 25 °C175 °C 100 101 102 103 IF [A] VSD [V] 9 µA 90 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 102 103 104 0 10 20 30 C [pF] VDS [V] 101 25 °C 100 °C 150 °C 100 1 10 100 1000 IAV [A] tAV [µs] 25 °C175 °C 100 101 102 103 0 0.4 0.8 1.2 IF [A] VSD [V] Rev. 1.0 page 6 2020-09-22

13 Avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 22 A pulsed parameter: V DD V GS Qgate V gs(th) Qg(th) Qgs Qgd Qsw Qg -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 8 V 32 V 0 5 10 VGS [V] Qgate [nC] 9 A 4.5 A 100 120 25 75 125 175 EAS [mJ] Tj [°C] Rev. 1.0 page 7 2020-09-22

PG-TDSON-8: Outline Footprint Dimensions in mm Packaging Rev. 1.0 page 8 2020-09-22

81726 Munich, Germany

© Infineon Technologies AG 2020 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2020-09-22

Revision History

Revision 1.0 Date 22.09.2020 Changes Final Datasheet Rev. 1.0 page 10 2020-09-22