IAUC28N08S5L230 INFINEON | Alldatasheet

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Technical content

Features

  • OptiMOS™ - power MOSFET for automotive applications
  • N-channel - Enhancement mode - Logic Level
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested Quality Features
  • Infineon Automotive Quality
  • Extended qualification beyond AEC Q101
  • Enhanced testing
  • Advanced adhesion against delamination
  • Complementary testing for board level reliability Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continous drain current I D T C=25°C, V GS=10V 28 A T C=100 °C, V GS=10 V1) 20 Pulsed drain current1) I D,pulse T C=25°C 112 Avalanche energy, single pulse1) E AS I D=14 A 28 mJ Avalanche current, single pulse I AS - 14 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 38 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value VDS 80 V RDS(on) 23 mW ID 28 A Product Summary Type Package Marking IAUC28N08S5L230 PG-TDSON-8 5N08L230 PG-TDSON-8 Rev. 1.0 page 1 2019-10-04

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 3.9 K/W Thermal resistance, junction - ambient2) R thJA - - 28.5 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=11 µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - - 1 µA V DS=80 V, V GS=0 V, Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=4.5 V, I D=14 A - 21 28 mΩ V GS=10 V, I D=14 A - 15 23 Gate resistance1) R G - - 0.9 - W Values

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics1) Input capacitance C iss - 667 867 pF Output capacitance C oss - 118 153 Reverse transfer capacitance Crss - 9.3 14 Turn-on delay time t d(on) - 2 - ns Rise time t r - 1 - Turn-off delay time t d(off) - 6 - Fall time t f - 4 - Gate Charge Characteristics1) Gate to source charge Q gs - 2.1 2.7 nC Gate to drain charge Q gd - 2.5 3.7 Gate charge total Q g - 11.6 15.1 Gate plateau voltage V plateau - 3.1 - V Reverse Diode Diode continous forward current1) I S - - 28 A Diode pulse current1) I S,pulse - - 70 Diode forward voltage V SD V GS=0 V, I F=14 A, T j=25 °C - 0.9 1.2 V Reverse recovery time1) t rr - 30 - ns Reverse recovery charge1) Q rr - 22 - nC Values V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=28 A, R G=3.5 W V DD=40 V, I D=14 A, V GS=0 to 10 V 2) Device on four layer 2s2p PCB defined in accordance with JEDEC standards (JESD51-5-7). PCB is vertical in still air. 1) The parameter is not subject to production test - verified by design/chracterization. V R=40 V, I F=28A, di F/dt =100 A/µs T C=25 °C Rev. 1.0 page 3 2019-10-04

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 150 µs 100 1000 0.1 1 10 100 ID [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-2 10-1 100 101 ZthJC [K/W] tp [s] 0 50 100 150 200 Ptot [W] TC [°C] 0 50 100 150 200 ID [A] TC [°C] 10-6 10-5 10-4 10-3 10-2 10-1 100 Rev. 1.0 page 4 2019-10-04

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 14 A; V GS = 10 V parameter: T j -55 -15 25 65 105 145 RDS(on) [mW] Tj [°C] -55 °C 25 °C 175 °C 100 120 140 1.5 3 4.5 6 ID [A] VGS [V] 3 V 4 V 4.5 V 7 V 3.5 V 10 V 100 120 0 1 2 3 4 5 6 7 ID [A] VDS [V] 10 V 3 V 3.5 V 4 V 4.5 V 0 40 80 120 RDS(on) [mW] ID [A] 7 V Rev. 1.0 page 5 2019-10-04

9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 25 °C 100 °C 150 °C 0.1 100 1 10 100 1000 IAV [A] tAV [µs] 25 °C 175 °C 100 101 102 103 IF [A] VSD [V] Ciss Coss Crss 101 102 103 0 20 40 60 80 C [pF] VDS [V] 11 µA 110 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Rev. 1.0 page 6 2019-10-04

13 Typical avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 14 A pulsed parameter: V DD -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 16 V 40 V 64 V 0 5 10 VGS [V] Qgate [nC] 14 A 7 A 3.5 A 100 120 25 75 125 175 EAS [mJ] Tj [°C] VGS Qgate Q gs Qgd Q g VGS Qgate Q gs Qgd Q g Rev. 1.0 page 7 2019-10-04

PG-TDSON-8: Outline Footprint Dimensions in mm Packaging Rev. 1.0 page 8 2019-10-04

85579 Neubiberg, Germany

© Infineon Technologies AG 2019 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2019-10-04