HV55G15_16 GETEDZ | Alldatasheet
Document overview
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Technical content
Features
High surge resisitivity for CRT discharge High reliability design Avalanche characteristic
Applications
Maximum Ratings and Characteristics Absolute Maximum Ratings High reliability resin molded type high voltage mesa type silicon chip by epoxy resin. X light Power supply Laser Voltage doubler circuit Microwave emission power General purpose high voltage rectifier, Voltage multiplier assembly. Epoxy resin molded in vacuum, Have anticorrosion in the surface diode in small size package which is sealed a multilayed Outline Drawings : Items Repetitive Peak Renerse Voltage Average Output Current Suege Current Junction Temperature Allowable Operation Case Temperature Symbols V RRM I O I FSM T j Tc Condition Ta=25°C,Resistive Load 55 125 125 -40 to +125 Units kV mA A peak Storage Temperature T stg HV55G15 Ta=25°C,8.3msec, half sine Ta=25°C, I =0.1mAR Maximum Reverse Recovery Time Trr at 25°C; Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols V F IR IR Conditions at 25°C,V R at 100°C,V Units V uA uA Junction Capacitance Cj at 25°C; V R =0V,f=1MHz 0.5 HV55G15 1.0 pF =VRRM R =VRRM 100 nS F at: I =0.5I ; F I =I (AV); R I =0.25I rr 3.0 R RF at 25°C, I