HV2X10F06G GETEDZ | Alldatasheet
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HV2X10F06G 2X 10A 6.0kV 100nS Half Bridge Type High Voltage Rectifier GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2017-08 1 / 2 INTRODUCE: HVGT high voltage silicon rectifier assembly is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage design. 3. Power frequency ratio. 4. Conform to RoHS . 5. Epoxy resin molded in vacuumHave anticorrosion in the surface . APPLICATIONS: 1. High frequency switching power supply. 2. Power supply of laser equipment . 3. General purpose high voltage rectifier. 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 950 grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME: HVD-33 MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings ) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25° C 6.0 6.0 kV Average Forward Current Maximum IFAVM TA=40°C 10 10 A Suege Current IFSM TA=25° C; Half-Sine Wave; 8.3mS 200 200 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -40~+125 °C Storage Temperature TSTG -40~+125 °C ELECTRICAL CHARACTERISTICS: TA=25° C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VF at 25° C; at IF(AV) 11 11 V Maximum Reverse Current IR1 at 25° C; at VRRM 5.0 5.0 uA IR2 at 100° C; at VRRM 50 50 uA Maximum Reverse Recovery Time TRR at 25° C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 100 100 nS Junction Capacitance CJ at 25° C; VR=0V; f=1MHz -- -- pF
HV2X10F06G 2X 10A 6.0kV 100nS Half Bridge Type High Voltage Rectifier GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2017-08 2 / 2 Fig 1 Forward Current Derating Curve Fig 2 Non-Repetitive Surge Current