HV200F06_1 GETEDZ | Alldatasheet
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200mA 6.0kV 100nS--High Voltage Silicon Rectifier Diode GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086 -20-8184 9638 2017-08 1 / 2 INTRODUCE: HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage design. 3. High frequency . 4. Conform to RoHS . 5. Epoxy resin molded in vacuumHave anticorrosion in the surface . APPLICATIONS: 1. High voltage multiplier circuit 2. Electrostatic generator circuit . 3. General purpose high voltage rectifier . 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.28 grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME : DO-308 MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings ) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25° C 6.0 kV Average Forward Current Maximum IFAVM TA=25° C 200 mA TOIL=--°C -- mA Suege Current IFSM TA=25° C; Half-Sine Wave; 8.3mS 10 A Junction Temperature TJ -40~+125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature TSTG -40~+125 °C ELECTRICAL CHARACTERISTICS: TA=25° C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VF at 25° C; at IF(AV) 18 V Maximum Reverse Current IR1 at 25° C; at VRRM 2.0 uA IR2 at 100° C; at VRRM 20 uA Maximum Reverse Recovery Time TRR at 25° C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 100 nS Junction Capacitance CJ at 25° C; VR=0V; f=1MHz 15 pF
200mA 6.0kV 100nS--High Voltage Silicon Rectifier Diode GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086 -20-8184 9638 2017-08 2 / 2 Fig 1 Fig 2 Forward Current Derating Curve Reverse Recovery Measurement Waveform Typical data capture points: IF =0.5IR , IR,IRR =0.25IR Fig 3 Non-Repetitive Surge Current Marking Type Code Cathode Mark HV200F06 --