HT0909-30A RFHIC | Alldatasheet

Document overview

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Technical content

GaN Hybrid Power Amplifier HT0909-30A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 8 Version 1.0 Product Features Applications

  • GaN on SiC HEMT
  • In/Out Impedance Matching
  • Surface Mount Hybrid Type
  • Small Size & Mass
  • High Efficiency
  • Low Cost
  • Custom design available
  • RF Sub-Systems
  • Base Station
  • Repeater
  • LTE system

Description

The HT0909-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 925 ~ 960MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Electrical Specifications @ Vds =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX CONDITION Frequency Range MHz 925 - 960 ZS = ZL = 50 ohm Power Gain dB 34 36 38 Amp : Idq1 = 110mA Idq2 = 130mA Gain Flatness - 0.3 1.0 Input Return Loss - -15 -8 Pout @ Average dBm - 37 - Pout @ Psat dBm 44 45 - Pulse Width=50us, 10%Duty ACLR @ BW 10MHz LTE (PAPR 7.5dB) dBc - -32 -28 Non DPD - -53 - With DPD Drain Efficiency % 25 27 - Pout @ Average Ids mA - 650 710 Supply Voltage V - -3.0 -2.0 Gate Bias (Vgs1 and Vgs2) V 27.5 28 - Main Bias(Vds) Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate V oltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain V oltage and last turn off the Gate voltage Note 1. ACLR Measured Pout=37dBm @ fc± 10MHz / 9.015MHz LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180) 2. HT Series have internal DC blocking capacitors at the RF input and output ports Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 2 - Dimension ㎜ 20.5 x 15 x 3.5 - Package Type : NP-1EL

GaN Hybrid Power Amplifier HT0909-30A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 8 Version 1.0 Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~0 Vgs1 Vgs2 Drain-Source Voltage V 50 Vds Gate Current mA 9.3 Ig Operating Junction Temperature °C 225 T J Operating Case Temperature °C -30 ~ 85 T C Storage Temperature °C -40 ~ 100 T STG *Maximum Input Level dBm 25 Pin * Test Condition : Pulse Width=50us, 10%Duty Operating Voltages & Input Level * Test Condition : Pulse Width=50us, 10%Duty PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V - 28 - Vds Gate Voltage (on-stage) V - -3 -2 Vgs 1 Gate Voltage (on-stage) V - -3 -2 Vgs 2 Gate Voltage (off-stage) V - -8 - Vgs 1 Gate Voltage (off-stage) V - -8 - Vgs 2 Idq1 mA 105 110 115 Idq1 Idq2 mA 120 130 140 Idq2 *RF Input Level dBm - - 20 Pin Block Diagram G a N o n S i C G a N o n S i C

GaN Hybrid Power Amplifier HT0909-30A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 8 Version 1.0 Application Circuit Part List Location Model No. Spec. Maker C6, C8 TAJD106M050R 10uF / 50V A VX C1, C3 TAJA475M016R 4.7uF / 16V A VX C5, C7 GRM32ER72A225KA35L 2.2uF/100V MURATA C2, C4, GRM1885C1H104BA01D 100nF MURATA Evaluation Board RO4350B 2Layer, 30mil ROGERS

GaN Hybrid Power Amplifier HT0909-30A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 8 Version 1.0 Performance Charts * Bias condition @ Idq1= 110mA, Idq2= 130mA, Vds= 28V , Ta=25℃ Power Gain vs. Frequency Psat vs. Frequency 920 930 940 950 960 Power Gain [dB] Frequency[MHz] Power Gain @Pout=37dBm 920 930 940 950 960 Psat [dBm] Frequency[GHz] Psat @Pulse Width 50us (Duty 10%) ACLR vs. Frequency Drain Efficiency vs. Frequency -44 -42 -40 -38 -36 -34 -32 -30 -28 920 930 940 950 960 ACLR [dBc] Frequency[GHz] ACLR_L @Pout=37dBm ACLR_U @Pout=37dBm 920 930 940 950 960 Efficiency [%] Frequency[GHz] Drain Efficiency @Pout=37dBm Ids1 vs Ids2 vs. Frequency Total Ids vs. Frequency 100 200 300 400 500 600 700 800 900 100 110 120 130 920 930 940 950 960 Ids[mA] Output Power[dBm] Ids1 Ids2 540 560 580 600 620 640 660 680 920 930 940 950 960 Ids[mA] Frequency[GHz] Total Ids @Pout=37dBm

GaN Hybrid Power Amplifier HT0909-30A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 8 Version 1.0 Performance Charts * Bias condition @ Idq1= 110mA, Idq2= 130mA, Vds= 28V , Ta=25℃ Power Gain vs. Output Power Drain Efficiency vs. Output Power 34 35 36 37 38 39 Power Gain [dB] Output Power[dBm] 925MHz 942.5MHz 960MHz 34 35 36 37 38 39 Efficiency [%] Output Power[dBm] 925MHz 942.5MHz 960MHz ACLR vs. Output Power Ids vs. Output Power -44 -42 -40 -38 -36 -34 -32 -30 -28 34 35 36 37 38 39 ACLR [dBc] Output Power[dBm] 925MHz 942.5MHz 960MHz *LTE 10MHz (PAPR=7.5dB) w/o DPD 200 300 400 500 600 700 800 900 34 35 36 37 38 39 Ids[mA] Output Power[dBm] Ids @925MHz Ids @942.5MHz Ids @960MHz

GaN Hybrid Power Amplifier HT0909-30A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 8 Version 1.0 Package Dimensions (Type: NP-1EL) * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function

1 RF Input 4 Vgs1 8 GND 11 GND

2 GND 5 Vds 9 GND 12 GND

3 GND 6 Vgs2 10 RF Output 13 GND

  • - 7 Vds - - 14 GND Recommended Pattern Recommended Mounting Configuration * Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting scre ws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Detail Pattern ‘A’

GaN Hybrid Power Amplifier HT0909-30A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 7 / 8 Version 1.0 Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative V oltage Bias which operates alongside a Positive V oltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circ uit. Therefore, users need to either apply positive voltages an d negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs1 and Vgs2. 3. Apply Vds. 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds, and then, turn off the Vgs1 and Vgs2. 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram -

GaN Hybrid Power Amplifier HT0909-30A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 8 / 8 Version 1.0 Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Measured reflow profile

Ordering Information

Part Number Package Design HT0909-30A -R (Reel) -B (Bulk) -EVB (Evaluation Board)

Revision History

Part Number Release Date Version Modification Data Sheet Status HT0909-30A 2013.12.20 1.0 Electrical Specification - HT0909-30A 2013.09.20 0.7 Changed Package Preliminary HT0909-30A 2013.04.20 0.6 Changed Specification Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including wi thout limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expect ed to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078.