HST06 HSMC | Alldatasheet

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MICROELECTRONICS CORP. Spec. No. : HE200902 Issued Date : 2009.08.15 Revised Date : Page No. : 1/4 HST06 HSMC Product Specification HST06 TRIAC 600V,6A

Description

Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. TO-220AB Pin Configuration Pin Description

1 Main terminal 1

2 Main terminal 2

3 Gate

G Limtiing Values Symbol Parameter Min. Max. Units VDRM Repetitive peak off-state voltages - 600 V IT(RMS) RMS on-state current - 6 A ITSM Non-repetitive peak on-state current(F=50Hz,tp=20ms) - 60 A I2t I 2t for fusing (IT=10ms) - 21 A2S dIT/dt Repetitive rate of rise of on-state current after triggering (F=50Hz,IG=50mA,dIg/dt=0.1us) - 50 A/us IGM Peak gate current(tp=20us,Tj=125°C) - 4 A PG(AV) Average gate power (Tj=125°C) - 1 W Tstg Storage Temperature Range -40 150 °C Tj Operating junction temperature -40 125 °C

MICROELECTRONICS CORP. Spec. No. : HE200902 Issued Date : 2009.08.15 Revised Date : Page No. : 2/4 HST06 HSMC Product Specification Electrical Characteristics (Ta=25°C, unless otherwise stated,) Rank min Rank max Symbol Parameter Quadrant C B C B Unit I - II - III 25 50 mA IGT Gate Trigger Current (VD=12V) IV 50 100 mA I - III- IV 40 50 mA IL Latching Current (I T=1.2 IGT,Tj=25°C) II 80 100 mA IH Holding Current(I T=0.1A,) ALL 25 50 mA VTM On-state Voltage VGT Gate Trigger Voltage (VD=12V, Tj=25°C) 1.3 V Off-state Leakage Current T C=25°C 10 uA ID (VD = VDRM( m a x ) ) T C=125°C 1 mA Critical rate of rise of off-state voltage dVD/dt VDM=400VTj= 125°C; exponential waveform; gate open circuit 200 400 V/us Thermal Resistances Symbol Parameter Min. Typ Max. Unit Rth j-c Thermal resistance junction to mounting base 2.4 °C/W

MICROELECTRONICS CORP. Spec. No. : HE200902 Issued Date : 2009.08.15 Revised Date : Page No. : 3/4 HST06 HSMC Product Specification TO-220AB Dimension DIM Min. Max. A 5.58 7.49 B 8.38 8.90 C 4.40 4.70 D 1.15 1.39 E 0.35 0.60 F 2.03 2.92 G 9.66 10.28 H - *16.25 I - *3.83 J 3.00 4.00 K 0.75 0.95 L 2.54 3.42 M 1.14 1.40 N - *2.54 O 12.70 14.27 P 14.48 15.87 *: Typical, Unit: mm A B E G I KM OP C N H D Tab F JL 3-Lead TO-220AB Plastic Package Marking: Note: Green label is used for pb-free packing Pin Style: 1. Main terminal 1 2 & Tab. Main terminal 2 3.Gate Material:

  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454

MICROELECTRONICS CORP. Spec. No. : HE200902 Issued Date : 2009.08.15 Revised Date : Page No. : 4/4 HST06 HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) <3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3oC/sec <3oC/sec Time maintained above: - Temperature (T - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 5sec ±1sec Pb-Free devices. 260oC +0/-5oC 5sec ±1sec tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP Temperature t 25oC to Peak Time