HSB647A HSMC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

MICROELECTRONICS CORP. Spec. No. : HA200201 Issued Date : 2002.01.01 Revised Date : 2005.02.14 Page No. : 1/4 HSB647A HSMC Product Specification HSB647A SILICON PNP EPITAXIAL

Description

Low Frequency Power Amplifier Complementary Pair With HSD667A. Absolute Maximum Ratings

  • Maximum Temperatures
  • Maximum Power Dissipation
  • Maximum Voltages and Currents (TA=25°C) Electrical Characteristics (TA=25°C) Symbol Parameter Min. Typ. Max. Unit Test Conditions BVCBO Collector to Base Breakdown Voltage -120 - - V I C=-100uA, IE=0 BVCEO Collector to Emitter Breakdown Voltage -100 - - V IC=-1mA, RBE=∞ BVEBO Emitter to Base Breakdown Voltage -5 - - V I E=-10uA, IC=0 ICBO Collector Cutoff Current - - -10 uA V CB=-100V, IE=0 *VCE(sat) Collector to Emitter Saturation Voltage - - -1 V I C=-500mA, IB=-50mA VBE(on) Base to Emitter Voltage - - -1.5 V V CE=-5V, IC=-150mA *hFE1 DC Current Transfer Ratio 1 60 - 200 V CE=-5V, IC=-150mA *hFE2 DC Current Transfer Ratio 2 30 - - V CE=-5V, IC=-500mA fT Gain Bandwidth Product - 140 - MHz V CE=-5V, IC=-150mA Cob Collector Output Capacitance - 20 - pF V CB=-10V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE1 Rank B C Range 60-120 100-200 TO-92

MICROELECTRONICS CORP. Spec. No. : HA200201 Issued Date : 2002.01.01 Revised Date : 2005.02.14 Page No. : 2/4 HSB647A HSMC Product Specification Characteristics Curve Current Gain & Collector Current 100 1000 1 10 100 1000 Collector Current-IC (mA) hFE 25 o C 75oC 125oC hFE @ VCE=5V Saturation Voltage & Collector Current 100 1000 10000 1 10 100 1000 Collector Current-IC (mA) Saturation Volltage (mV) 25oC 75oC 125 o C VCE(sat) @ IC=10IB ON Voltage & Collector Current 100 1000 1 10 100 1000 Collector Current-IC (mA) ON Voltage (mV) 25oC 75oC 125oC VBE(on) @ VCE=5V Cutoff Frequency & Collector Current 100 1000 0.1 1 10 100 Collector Current-IC (mA) Cutoff Frequency (MHZ)... fT @ VCE=5V Capacitance & Reverse-Biased Voltage 100 0.1 1 10 100 Reverse Biased Voltage (V) Capacitance (pF) Cob Power Derating 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 120 140 160 Ambient Temperature-Ta (oC) Power Dissipation-PD (mW)

MICROELECTRONICS CORP. Spec. No. : HA200201 Issued Date : 2002.01.01 Revised Date : 2005.02.14 Page No. : 3/4 HSB647A HSMC Product Specification TO-92 Dimension TO-92 Taping Dimension Important Notice:

  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 A D B C I α 1 E α 2 α 3 GH F H2AH2AH2H2 D2 A H W L P F1F2 D1 D T DIM Min. Max. A 4.33 4.83 B 4.33 4.83 C 12.70 - D 0.36 0.56 E- * 1 . 2 7 F 3.36 3.76 G 0.36 0.56 H- * 2 . 5 4 I- * 1 . 2 7 α 1 - *5° α 2 - *2° α 3 - *2° *: Typical, Unit: mm 3-Lead TO-92 Plastic Package DIM Min. Max. A 4.33 4.83 D 3.80 4.20 D1 0.36 0.53 D2 4.33 4.83 F1,F2 2.40 2.90 H 15.50 16.50 H1 8.50 9.50 H2 - 1 H2A - 1 H3 - 27 H4 - 21 L- 1 1 L1 2.50 - P 12.50 12.90 P1 5.95 6.75 P2 50.30 51.30 T - 0.55 T1 - 1.42 T2 0.36 0.68 W 17.50 19.00 W1 5.00 7.00 Unit: mm Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None Control CodeDate Code HB 647 S A Note: Green label is used for pb-free packing Pin Style: 1.Emitter 2.Collector 3.Base Material:
  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

MICROELECTRONICS CORP. Spec. No. : HA200201 Issued Date : 2002.01.01 Revised Date : 2005.02.14 Page No. : 4/4 HSB647A HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP)< 3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3 oC/sec <3 oC/sec Time maintained above: - Temperature (TL) - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6 oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 5sec ±1sec Pb-Free devices. 260 oC +0/-5oC 5sec ±1sec Figure 1: Temperature profile tP tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP t 25oC to Peak Time Temperature