H50N03J HSMC | Alldatasheet

Document overview

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Technical content

Features

  • RDS(on)=6mΩ @VGS=10V, ID=30A
  • RDS(on)=9mΩ @VGS=4.5V, ID=30A
  • Advanced trench process technology
  • High Density Cell Design for Ultra Low On-Resistance
  • Specially Designed for DC/DC Converters and Motor Drivers
  • Fully Characterized Avalanche Voltage and Current
  • Improved Shoot-Through FOM Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Symbol Value Units Drain-Source Voltage V DS 25 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D 50 A Pulsed Drain Current *1 IDM 350 A TA=25oC7 0 W Maximum Power Dissipation TA=75oC PD 42 W Operating Junction and Storage Temperature Range T J,Tstg -55 to 150 oC Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.1mH EAS 300 mJ Junction-to-Case Thermal Resistance RθJC 1.8 OC/W Junction-to-Ambient Thermal Resistance(PCB mounted)*2 RθJA 40 OC/W *1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board H50N03J Pin Assignment Switching Test Circuit Switching Waveforms G D S VIN VOUT VDD RG VGEN Pulse Width 50% 50% 90% 10%Input, VIN 90% 90 % 10%Output, VOUT tr ton td(on) 10% td(off) toff Inverted tf 1 2 3 Tab 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Internal Schematic Diagram G D S

MICROELECTRONICS CORP. Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 2/5 H50N03J HSMC Product Specification

ELectrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=250uA 25 - - V Drain-Source On-State Resistance R DS(on) VGS=4.5V, ID=30A - 7.5 9 Drain-Source On-State Resistance R DS(on) VGS=10V, ID=30A - 4.5 6 mΩ Gate Threshold Voltage V GS(th) VDS=VGS, ID=250uA 1.3 1.9 3 V Zero Gate Voltage Drain Current I DSS VDS=25V, VGS=0V - - 1 uA Gate Body Leakage I GSS VGS=±20V, VDS=0V -- ±100 nA Gate Resistance R g VDS=0V, VGS=1V at 1MHz - 3 - Ω Forward Transconductance g fs VDS=15V, ID=15A - 50 - S Dynamic Total Gate Charge Q g - 16.8 - Gate-Source Charge Q gs -6 . 0 8- Gate-Drain Charge Q gd VDS=15V, ID=20A, VGS=5V -4 . 9 3- nC Turn-On Delay Time td(on) - 15.3 - Turn-On Rise Time tr - 4 - Turn-Off Delay Time td(off) - 45.27 - Turn-Off Fall Time tf VDD=15V, RL=15Ω , ID=1A VGEN=10V, RG=6Ω -7 . 6- nS Input Capacitance C iss - 2325.9 - Output Capacitance C oss - 330.55 - Reverse Transfer Capacitance C rss VDS=15V, VGS=0V, f=1MHz - 173.91 - pF Source-Drain Diode Max. Diode Forward Current I S -- 5 0 A Diode Forward Voltage V SD IS=20A, VGS=0V - 0.85 1.3 V NOTE: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%

MICROELECTRONICS CORP. Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 3/5 H50N03J HSMC Product Specification Characteristics Curve 012345 V DS - Drain-to-Source Voltage (V) ID - Drain-to-Source Current (A) 2.5V 3.0V 3.5V Fig.1 Output Characteristric 11 . 522 . 533 . 544 . 5 V GS - Gate-to-Source Voltage (V) ID - Drain Source Current (A) VDS =10V TJ = 125oC 25oC - 55oC Fig.2 Trans fer Characteris tric 0 20 40 60 80 100 ID - Drain Current (A) RDS(ON) - On-Resistance (m Ξ ) VGS = 4.5V VGS = 10V Fig.3 On Resistance vs Drain Current 2468 1 0 VGS - Gate-to-Source Voltage (V) RDS(ON) - On-Resistance (m  ) ID =30A TJ =25oC 125oC Fig.4 On Resistance vs Gate to Source Voltage 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) RDS (ON) - On-Resistance (Normalized) VGS =10 V ID =30A RDS(on) - On - Resistance (Mormalized Fig.5 On Resistance vs Junction Temperature 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 Ciss f=1M H z VGS=0V Coss, Crss Fig.6 Capacitance C - Capacitance (pF) VDS - Drain-to-Source Voltage (V)

MICROELECTRONICS CORP. Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 4/5 H50N03J HSMC Product Specification TO-252 Dimension Important Notice:

  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 M N A L C 321 G H F A B C D E J K a2 a2 L F G H I y2 y2 M O N y1y1 3-Lead TO-252 Plastic Surface Mount Package Marking: Control CodeDate Code HJ Pb Free Mark Pb-Free: " . " (Note) Normal: None N03 Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material:
  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. Max. A 6.35 6.80 C 4.80 5.50 F 1.30 1.70 G 5.40 6.25 H 2.20 3.00 L 0.40 0.90 M 2.20 2.40 N 0.90 1.50 a1 0.40 0.65 a2 - *2.30 a5 0.65 1.05 *: Typical, Unit: mm Marking: HJ Pb Free Mark Pb-Free: " . " (Note) Normal: None Control CodeDate Code 50N03 Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material:
  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 3-Lead TO-252 Plastic Surface Mount Package DIM Min. Max. A 6.40 6.80 B - 6.00 C 5.04 5.64 D- * 4 . 3 4 E 0.40 0.80 F 0.50 0.90 G 5.90 6.30 H 2.50 2.90 I 9.20 9.80 J 0.60 1.00 K - 0.96 L 0.66 0.86 M 2.20 2.40 N 0.70 1.10 O 0.82 1.22 a1 0.40 0.60 a2 2.10 2.50 y1 - 5 o y2 - 3 o *: Typical, Unit: mm

MICROELECTRONICS CORP. Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 5/5 H50N03J HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP)< 3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3 oC/sec <3 oC/sec Time maintained above: - Temperature (T - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6 oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 5sec ±1sec Pb-Free devices. 260 oC +0/-5oC 5sec ±1sec Figure 1: Temperature profile tP tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP t 25oC to Peak Time Temperature