HSK2474I HSMC | Alldatasheet

Document overview

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Technical content

Features

  • Low Drain-Source ON Resistance - RDS(ON)=1.2Ω (Typ.)@ VDS=10V, ID=1.3A
  • High Forward Transfer Admittance -|Yfs|=1.2S@VDS=50V, ID=1.3A
  • Low Leakage Current - IDSS=100uA (Max.)@VDS=200V
  • Enhancement-Mode - Vth = 2.0~4.0V@VDS=4V, ID=250uA Absolute Maximum Ratings (Ta=25°C)
  • Maximum Temperatures
  • Maximum Power Dissipation
  • Maximum Voltages and Currents Thermal Characteristics Characteristic Symbol Max. Units Junction to Case RθJC 5 °C/W Junction to Ambient RθJA 50 °C/W

MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.11.01 Revised Date : 2000.11.01 Page No. : 2/5 HSMC Product Specification Electrical Characteristics (Ta=25°C) Characteristics Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage V (BR)DSS 250 - - V ID=250uA Gate Threshold Voltage V GS(th) 2.0 - 4.0 V VDS=4V, ID=250uA Drain Cut-Off Current I DSS - - 25 uA VDS=200V Gate Leakage Current I GSS -- ±100 uA VGS=±20V Forward Transconductance gfs 0.80 1.2 - VDS=50V,ID=1.3A Drain-Source ON Resistance R DS(ON) -1 . 2 2 . 0 Ω VGS=10V, ID=1.3A Input Capacitance C iss - 280 - pF Reverse Transfer Capacitance C rss -3 0-p F Output Capacitance C oss -4 2-p F VDS=10V, VGS=0V f=1.0MHz tr -4 5- ton -3 0- tf -4 5-Switching Time Toff - 135 - nS VDD=100V, ID=1.0A RG=24Ω , RD=45Ω Total Gate Charge (Gate-Source Plus Gate-Drain) Qg -- 8 . 2 n C Gate-Source Charge Q gs -- 1 . 8 n C Gate-Drain Charge (Miller) Q gd -- 4 . 5 n C ID=2.7A, VDS=200V VGS=10V

MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.11.01 Revised Date : 2000.11.01 Page No. : 3/5 HSMC Product Specification Characteristics Curve On-Region Characteristic 0123456789 1 0 VDS,Drain-Source Voltage (V) ID, Drain-Source Current (A) VGS=2V VGS=4V VGS=6V VGS=8V VGS=10V Breakdown Voltage Variation with Temperature 0.95 0.97 0.99 1.01 1.03 1.05 1.07 1.09 1.11 1.13 1.15 20 40 60 80 100 Tc, Case Temperature (°C) BVDSS, Normalized Drain-Source Breakdown Voltage Transconductance Variation with Drain Current & Temperature 012345678 ID, Drain-Source Current (A) GFS,Transconductance (S) Tc=100°C Tc=25°C VDS=10V Drain Current Variation with Gate Voltage & Temperature 012345678 VGS, Gate-Source Votltage(V) ID, Drain-source Current (A) VDS=10V TC=100°C Tc=25°C On Resistance Variation with Temperature 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 25 35 45 55 65 75 85 95 105 115 125 Tc, Case Temperature (°C) RDS(on), Drain-Source On-Resistance (ohm) VGS=10V ID=1.3A Typical On-Resistance & Drain-Current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0123456789 1 0 ID, Drain-Source Current (A) RDS(on), Drain-Source On-Resistance (ohm) VGS=10V VGS=6V

MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.11.01 Revised Date : 2000.11.01 Page No. : 4/5 HSMC Product Specification Body Diode Forward Voltage Variation with Current & Temperature VSD, Body Diode Forward Voltage (V) IS, Reverse Drain Current (A) Tc=25°C Tc=100°C Capacitance Characteristices 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage (V) Capacitance (pF) Ciss Coss Crss RDSON(Temp) 0.0 0.5 1.0 1.5 2.0 2.5 0123456789 1 0 ID, Drain-Source Current (A) RDS(on),Normalized Drain-Source On Resistance (ohm) Tc=25°C Tc=100°C VGS=10V

MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.11.01 Revised Date : 2000.11.01 Page No. : 5/5 HSMC Product Specification TO-251 Dimension *:Typical F 0.2677 0.2835 6.80 7.20 Notes : 1.Dimension and tolerance based on our Spec. dated May. 24,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material :

  • Lead : 42 Alloy ; solder plating
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Tel : 886-3-5983621~5 Fax : 886-3-5982931 Tel : 886-3-5977061 Fax : 886-3-5979220 A E F G H J I K C D B Style : Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package Marking : HSMC Logo Part Number Date Code Product Series Rank Ink Mark