HSDL-4261 LITEON | Alldatasheet
Document overview
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Technical content
Features
- Very High Power AlGaAs LED Technology
- 870nm Wavelength
- T-1¾ Package
- Low Cost
- Low Forward Voltage: 1.4V at 20mA
- High Speed: 15ns Rise Times
Applications
- Industrial IR Equipments
- IR Portable Instruments
- Consumer Electronics (Optical mouse etc)
- High Speed IR Communications (IR LANs, IR Modems, IR Dongles etc)
- IR Audio
- IR Telephones Part Number Lead Form Shipping Option HSDL-4261 Straight Bulk
Description
The HSDL-4261 Infrared emitter was designed for ap- plications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 870nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package. 1.14 ± 0. 5.8 ± 0. 5.0 ± 0. 1.6 min. 0.7 max. 8.7 ± 0. .54 0.50 ± 0.1 CATHODE FLAT 1.0 min. HSDL - 4261 High-Power T-1¾ (5mm) AlGaAs Infrared (870nm) Lamp Data Sheet
Absolute Maximum Ratings at 25°C Electrical Characteristics at 25°C Optical Characteristics at 25°C Notes: 1. Derate as shown in Figure 6. Parameter Symbol Min. Typ. Max. Unit Condition Reference Forward Voltage VF - 1.4 1.7 1.5 1.9 V IFDC=20mA IFDC=100mA Fig. 2 Fig. 3 Forward VoltageTemperature Coefficient DV/DT - -1.5 -1.3 - mV/°C IFDC=20mA IFDC=100mA Fig. 4 Series Resistance RS - 4.1 - Ohms IFDC=100mA Diode Capacitance CO - 80 - pF 0V, 1MHz Reverse Voltage VR 3 14 - V IR=100uA Thermal Resistance, Junction to Ambient Rqja - 280 - °C/W Parameter Symbol Min. Typ. Max. Unit Condition Reference Radiant Optical Power PO - 9 - mW IFDC=20mA IFDC=100mA Radiant On-Axis Intensity IE - 36 180 - mW/Sr IFDC=20mA IFDC=100mA Fig. 5 Radiant On-Axis Intensity Temperature Coefficient DIE/DT - -0.22 - %/°C IFDC=100mA Viewing Angle 2q1/2 - 26 - deg IFDC=20mA Fig. 7 Peak wavelength lPK - 870 - nm IFDC=20mA Fig. 1 Peak wavelengthTemperature Coefficient Dl/DT - 0.18 - nm/°C IFDC=20mA Spectral Width Dl - 47 - nm IFDC=20mA IFDC=100mA Fig. 1 Optical Rise and Fall Time tr/tf - 15 - ns IFPK=500mA Duty Factor=33% Pulse Width=125nsBandwidth fc - 23 - MHz Parameter Symbol Min. Max Unit Reference DC Forward Current IFDC - 100 mA [1], Fig. 2 Power Dissipation PDISS - 190 mW Reverse Voltage VR 5 - V Operating Temperature TO -40 70 °C Storage Temperature TS -40 100 °C LED Junction Temperature TJ - 110 °C Lead Soldering Temperature - 260 for 5 sec °C
Figure 7. Radiant Intensity vs. Angular Displacement Data subject to change. Copyright © 2007 Lite-On Technology Corporation. All rights reserved.