HSDL-4260 LITEON | Alldatasheet
Document overview
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Technical content
Features
- •• •• High Power AlGaAs LED Technology
- •• •• Low Forward Voltage: 1.4V at 20mA
- •• •• High Speed: 15ns Rise Times
Applications
- •• •• Industrial Infrared Equipments and applications
- •• •• Portable Infrared Instruments
- •• •• Consumer Electronics (Optical mouse, Infrared Remote Controllers etc)
- •• •• High Speed Infrared Communications (IR LANs, IR Modems, IR Dongles etc)
Description
The HSDL-4260 High Power Infrared emitter was designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 875nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package. HSDL-4260 High-Power T-1¾ (5mm) AlGaAs Infrared (875nm) Lamp Datasheet
Recommended Operating Conditions Parameter Symbol Min Max Unit Reference Operating Temperature T O -40 85 °C Parameter Symbol Min. Typ. Max. Unit Condition Reference Forward Voltage V F -1 . 4 1.7 1.9 2.3 VI FDC=20mA IFDC=100mA Figure 2 Forward Voltage Temperature Coefficient ∆V/∆T -- 1 . 3 -m V / ° C I FDC=100mA Figure 4 Series Resistance R S -4 -O h m s I FDC=100mA Diode Capacitance C O -7 0 -p F V bias=0V, f=1MHz Thermal Resistance, Junction to Ambient Rθja - 300 - °C/W Optical Characteristics at 25 °°°°°C Parameter Symbol Min. Typ. Max. Unit Condition Reference Radiant On-Axis Intensity I E 150 200 - mW/Sr I FDC=100mA Figure 5 Radiant On-Axis Intensity Temperature Coefficient ∆IE/∆T - -0.36 - %/°C I FDC=100mA Viewing Angle 2 θ1/2 -1 5 - ° F i g u r e 7 Peak Wavelength λpk -8 7 5 - n m F i g u r e 1 Peak wavelength Temperature Coefficient ∆λ/∆T -0 . 2 - n m / ° C I FDC=100mA Spectral Width ∆λ 45 - nm I FDC=20mA Figure 1 Optical Rise and Fall Time t r/tf 15 - ns I FDC=500mA Duty Ratio = 20% Pulse Width=100ns Absolute Maximum Ratings at 25 °°°°°C Parameter Symbol Minimum Maximum Unit Reference Peak Forward Current I FPK - 500 mA Figure 3 Duty cycle = 20% Pulse Width = 100us Forward Current I FDC -1 0 0 m A [ 1 ] Power Dissipation P DISS - 230 mW Reverse Voltage V R 4- V I R=100uA Storage T emperature T S -40 100 °C LED Junction Temperature T J 110 °C Lead Soldering T emperature 260 for 5 sec °C Notes: Derate as shown in Figure 6. Electrical Characteristics at 25 °°°°°C
Figure 7. Radiant Intensity vs. Angular Displacement for HSDL-4260 Data subject to change. Copyright © 2007 Lite-On Technology Corporation. All rights reserved.