HSD468 HSMC | Alldatasheet

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MICROELECTRONICS CORP. Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2002.02.08 Page No. : 1/4 HSD468 HSMC Product Specification HSD468 NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HSD468 is designed for general purpose low frequency power amplifier applications. Absolute Maximum Ratings

  • Maximum Temperatures
  • Maximum Power Dissipation
  • Maximum Voltages and Currents (Ta=25°C) Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 25 - - V IC=10uA, IE=0 BVCEO 20 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=10uA, IC=0 ICBO - - 1 uA VCB=20V, IE=0 *VCE(sat) - - 500 mV IC=0.8A, IB=80mA VBE(on) - - 1 V VCE=2V, IC=500mA *hFE 85 - 240 VCE=2V, IC=500mA fT - 190 - MHz VCE=2V, IC=500mA Cob - 22 - pF VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE Rank B C Range 85-170 120-240 TO-92

MICROELECTRONICS CORP. Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2002.02.08 Page No. : 2/4 HSD468 HSMC Product Specification Characteristics Curve Current Gain & Collector Current 100 1000 1 10 100 1000 Collector Current-IC (mA) hFE 25oC hFE @ VCE=2V 125oC 75oC Saturation Voltage & Collector Current 10.0 100.0 1000.0 0.1 1 10 100 1000 Collector Current-IC (mA) Saturation Voltage (mV) 25oC 125oC 75oC VCE(sat) @ IC=10IB ON Voltage & Collector Current 100 1000 0.1 1 10 100 1000 Collector Current-IC (mA) ON Voltage (mV) 25oC 125oC 75oC VBE(ON) @ VCE=2V Cutoff Frequency & Ic 100 1000 1 10 100 1000 Collector Current (mA) Cutoff Frequency (MHz)... VCE=2V Capacitance & Reverse-Biased Voltage 100 0.1 1 10 100 1000 Reverse Biased Voltage (V) Capacitance (pF) Cob Safe Operating Area 100 1000 10000 1 10 100 Forward Voltage-Vce (V) Collector Current-I C (mA) PT=1ms PT=100m s PT=1s

MICROELECTRONICS CORP. Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2002.02.08 Page No. : 3/4 HSD468 HSMC Product Specification IR Reflow Profile 100 120 140 160 180 200 220 240 260 0 50 100 150 200 250 300 Time(sec) Temperature(oC) 150+/-30 40+/-20 sec 10+/-2 sec Temperature Profile for Dip Soldering 100 150 200 250 300 0 50 100 150 200 250 300 350 Time(sec) Temperature(oC) 10+/-2 sec 120+/-20 sec Power Temperature Derating 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 120 140 160 Ta , Case Temperature (°C) PD , Power Dissipation (mW)

MICROELECTRONICS CORP. Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2002.02.08 Page No. : 4/4 HSD468 HSMC Product Specification TO-92 Dimension *: Typical D 0.0142 0.0220 0.36 0.56 α1 - *5° - *5° F 0.1323 0.1480 3.36 3.76 α3 - *2° - *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material:

  • Lead: 42 Alloy; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 A D B C I α 1 E F α 2 α 3 GH Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package Marking: HD 648 Date Code Control Code S Rank