HSD313 HSMC | Alldatasheet
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MICROELECTRONICS CORP. Spec. No. : HE6728 Issued Date : 1993.04.12 Revised Date : 2002.05.07 Page No. : 1/4 HSD313 HSMC Product Specification HSD313 NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD313 is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C)
- Maximum Temperatures
- Maximum Power Dissipation
- Maximum Voltages and Currents Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=1mA, IE=0 BVCEO 60 - - V IC=10mA, IB=0 BVEBO 5 - - V IE=100uA, IC=0 ICBO - - 0.1 mA VCB=20V, IE=0 ICEO - - 5 mA VCE=60V, IB=0 IEBO - - 1 mA VEB=4V, IC=0 *VCE(sat) - - 1 V IC=2A, IB=0.2A *VBE(on) - - 1.5 V IC=1A, VCE=2V *hFE1 40 - 320 IC=1A, VCE=2V *hFE2 40 - - IC=0.1A, VCE=2V ft - 8 - V VCE=5V, IC=0.5A *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE1 Rank C D E F hFE 40-80 60-120 100-200 160-320 TO-220
MICROELECTRONICS CORP. Spec. No. : HE6728 Issued Date : 1993.04.12 Revised Date : 2002.05.07 Page No. : 2/4 HSD313 HSMC Product Specification Characteristics Curve Current Gain & Collector Current 100 1000 1 10 100 1000 10000 Collector Current-IC (mA) hFE hFE @ VCE=2V 125oC 75oC o C Current Gain & Collector Current 100 1000 1 10 100 1000 10000 Collector Current-IC (mA) hFE hFE @ VCE=4V 125oC o C 25oC Saturation Voltage & Collector Current 100 1000 1 10 100 1000 10000 Collector Current-IC (mA) Saturation Voltage (mV) VCE(sat) @ IC=10IB 25oC 125oC 75oC Saturation Voltage & Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current-IC (mA) Saturation Voltage (mV) VCE(sat) @ IC=50IB 125 o C 75oC 25oC ON Voltage & Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current-IC (mA) ON Voltage (mV) VBE(ON) @ VCE=2V 25oC o C 125oC Switching Time & Collector Current 0.01 0.10 1.00 10.00 0.1 1.0 10.0 Collector Current (A) Switching Times (us)... VCC=30V, IC=10IB1= -10IB2 Tstg Tf Ton
MICROELECTRONICS CORP. Spec. No. : HE6728 Issued Date : 1993.04.12 Revised Date : 2002.05.07 Page No. : 3/4 HSD313 HSMC Product Specification Capacitance & Reverse-Biased Voltage 100 0.1 1 10 100 Revers-Biased Voltage (V) Capacitance (pF) Cob Safe Operating Area 100 1000 10000 100000 1 10 100 Forward Voltage-VCE (V) Collector Current-I C (mA) PT=1ms PT=100ms PT=1s Output Characteristics at IB=1mA,2mA,3mA...10mA 200 400 600 800 1000 1200 1400 1600 0 5 10 15 Collector Voltage (V) Collector Current (mA) IB=1mA IB=2mA IB=3mA IB=4mA IB=5mA IB=6mA IB=7mA IB=8mA IB=9mA IB=10mA
MICROELECTRONICS CORP. Spec. No. : HE6728 Issued Date : 1993.04.12 Revised Date : 2002.05.07 Page No. : 4/4 HSD313 HSMC Product Specification TO-220AB Dimension *: Typical Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material:
- Lead: 42 Alloy; solder plating
- Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
- HSMC reserves the right to make changes to its products without notice.
- HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 A B E G I KM OP C N H D Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-220AB Plastic Package Marking: Date Code Control Code H SD Rank