HSD2118J HSMC | Alldatasheet

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MICROELECTRONICS CORP. Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 1/5 HSD2118J HSMC Product Specification HSD2118J LOW VCE(sat) TRANSISTOR (20V, 5A) Feature

  • Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A)
  • Excellent DC Current Gain Characteristic
  • Complements the HSB1386J Structure Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Ratings (TA=25°C)
  • Maximum Temperatures
  • Maximum Power Dissipation
  • Maximum Voltages and Currents (TA=25°C) Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 50 - - V I C=50uA BVCEO 20 - - V I C=1mA BVEBO 6--V I E=50uA ICBO -- 0 . 5 u A V CB=40V IEBO -- 0 . 5 u A V EB=5V *VCE(sat)1- 0 . 6 1 V I C/IB=4A/0.1A *hFE 180 - 620 V CE=2V, IC=0.5A fT - 150 - MHz V CE=6V, IE=-50mA, f=100MHz Cob - 30 - pF V CE=20V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE Rank R E Range 180-390 370-620 TO-252

MICROELECTRONICS CORP. Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 2/5 HSD2118J HSMC Product Specification Characteristics Curve Current Gain & Collector Current 100 1000 1 10 100 1000 10000 Collector Current-IC (mA) hFE hFE @ VCE=2V 25oC 75oC 125oC Saturation Voltage & Collector Current 100 1000 0.1 1 10 100 1000 10000 Collector Current-IC (mA) Saturation Voltage (mV) VCE(sat) @ IC=20IB 25oC 75oC 125oC Saturation Voltage & Collector Current 100 1000 1 10 100 1000 10000 Collector Current-IC (mA) Saturation Voltage (mV) VCE(sat) @ IC=40IB 25oC 75oC 125oC Saturation Voltage & Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current-IC (mA) Saturation Voltage (mV) VBE(sat) @ IC=20IB 125oC o C 25oC Capcitance & Reverse-Biased Voltage 100 1000 0.1 1 10 100 Reverse Biased Voltage (V) Capacitance (pF) Cob Power Derating 0 20 40 60 80 100 120 140 Tc( o C), Ambient Temperature PD(W), Power Dissipation

MICROELECTRONICS CORP. Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 3/5 HSD2118J HSMC Product Specification Safe Operating Area 0.1 1 10 100 Forward Voltage-VCE (V) Collector Current-I C (A) PT=1mS PT=100mS PT=1S

MICROELECTRONICS CORP. Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 4/5 HSD2118J HSMC Product Specification TO-252 Dimension Important Notice:

  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 M N A L C 321 G H F A B C D E J K a2 a2 L F G H I y2 y2 M O N y1y1 3-Lead TO-252 Plastic Surface Mount Package Marking: Control CodeDate Code HD Pb Free Mark Pb-Free: " . " (Note) Normal: None 18J S Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter Material:
  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. Max. A 6.35 6.80 C 4.80 5.50 F 1.30 1.70 G 5.40 6.25 H 2.20 3.00 L 0.40 0.90 M 2.20 2.40 N 0.90 1.50 a1 0.40 0.65 a2 - *2.30 a5 0.65 1.05 *: Typical, Unit: mm Marking: HD Pb Free Mark Pb-Free: " . " (Note) Normal: None Control CodeDate Code 211 S Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter Material:
  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 3-Lead TO-252 Plastic Surface Mount Package DIM Min. Max. A 6.40 6.80 B - 6.00 C 5.04 5.64 D- * 4 . 3 4 E 0.40 0.80 F 0.50 0.90 G 5.90 6.30 H 2.50 2.90 I 9.20 9.80 J 0.60 1.00 K - 0.96 L 0.66 0.86 M 2.20 2.40 N 0.70 1.10 O 0.82 1.22 a1 0.40 0.60 a2 2.10 2.50 y1 - 5 o y2 - 3 o *: Typical, Unit: mm

MICROELECTRONICS CORP. Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 5/5 HSD2118J HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP)< 3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3 oC/sec <3 oC/sec Time maintained above: - Temperature (TL) - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6 oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 5sec ±1sec Pb-Free devices. 260 oC +0/-5oC 5sec ±1sec Figure 1: Temperature profile tP tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP t 25oC to Peak Time Temperature