HSD1609S HSMC | Alldatasheet

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MICROELECTRONICS CORP. Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4 HSD1609S HSMC Product Specification HSD1609S NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S. Absolute Maximum Ratings

  • Maximum Temperatures
  • Maximum Power Dissipation
  • Maximum Voltages and Currents (Ta=25°C) Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 160 - - V IC=10uA, IE=0 BVCEO 160 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=10uA, IC=0 ICBO - 10 uA VCB=140V, IE=0 *VCE(sat) - - 2 V IC=30mA, IB=3mA VBE(on) - - 1.5 V VCE=5V, IC=10mA *hFE1 60 - 320 VCE=5V, IC=10mA *hFE2 30 - - VCE=5V, IC=1mA fT - 140 - MHz VCE=5V, IC=10mA Cob - 3.8 - pF IE=0, VCB=10V, f=1MHZ *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE1 Rank B C D Range 60-120 100-200 160-320 TO-92

MICROELECTRONICS CORP. Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 2/4 HSD1609S HSMC Product Specification Characteristics Curve Current Gain & Collector Current 100 1000 10000 0.1 1 10 100 1000 Collector Current IC (mA) hFE o C hFE @ VCE=5V 125oC 75oC Saturation Voltage & Collector Current 100 1000 0.1 1 10 100 1000 Collector Current IC (mA) Saturation Voltage (mV) 25oC 125oC 75oC VCE(sat) @ IC=10IB Saturation Voltage & Collector Current 100 1000 10000 0.1 1 10 100 1000 10000 Collector Current IC (mA) Saturation Voltage (mV) 25oC 125oC 75oC VCE(sat) @ IC=20IB ON Voltage & Collector Current 100 1000 0.1 1 10 100 1000 Collector Current IC (mA) ON Voltage (mV) 25oC 125oC 75oC VBE(ON) @ IC=5V Cutoff Frequency & Ic 100 1000 1 10 100 1000 Collector Current (mA) Cutoff Frequency (MHz).. fT Capacitance & Reverse-Biased Voltage 0.1 1 10 100 1000 Reverse Biased Voltage (V) Capacitance (PF) Cob

MICROELECTRONICS CORP. Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 3/4 HSD1609S HSMC Product Specification Safe Operating Area 0.001 0.01 0.1 1 10 100 1000 Forward Voltage (V) Collector Current (mA) PT=1ms PT=100ms PT=1s Power Derating 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 120 140 160 Ambient Temperature-Ta(oC) Power Dissipation-PD(mW)

MICROELECTRONICS CORP. Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 4/4 HSD1609S HSMC Product Specification TO-92 Dimension *: Typical D 0.0142 0.0220 0.36 0.56 α1 - *5° - *5° F 0.1323 0.1480 3.36 3.76 α3 - *2° - *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material:

  • Lead: 42 Alloy; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 A D B C I α 1 E F α 2 α 3 GH Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package Marking: HSMC Logo Part Number Date Code Product Series Rank Laser Mark HSMC Logo Part Number Product Series Ink Mark