HSCH-5314 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • Platinum tri-metal system High temperature stability
  • Silicon nitride passivation Stable, reliable performance
  • Low noise figure Guaranteed 7.5 dB at 26 GHz
  • High uniformity Tightly controlled process insures uniform RF characteristics
  • Rugged construction 4 grams minimum lead pull
  • Low capacitance 0.10 pF max. at 0 V
  • Polyimide scratch protection

Description

These beam lead diodes are constructed using a metal- semiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to I R drift. The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.

Applications

The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band. The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Equivalent low barrier devices are HSCH-5330 and -5332. Batch matched versions are available as HSCH-5331. The HSCH-5340 is selected for applications requiring guaranteed RF-tested performance up to 26 GHz. The HSCH-5314 is rated at 7.2 dB maximum noise figure at 16 GHz. Assembly Techniques Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information, see Application Note 979, The Handling and Bonding of Beam Lead Devices Made Easy , or Application Note 993, Beam Lead Device Bonding to Soft Substances. Outline 07 HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet CATHODE GOLD LEADS DIMENSIONS IN µm (1/1000 inch) 135 (5) 90 (3) 130 (5) 100 (4) 135 (5) 90 (3) 225 (9) 170 (7) 310 (12) 250 (10) 225 (9) 200 (8)

30 MIN (1)

710 (28) 670 (26) 60 (2) 40 (1) 8 Min. (.3)

Pulse Width = 1 ms, Du = 0.001 Measured in an infinite heat sink derated linearly to zero at maximum rated temperature T These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. IF Min. Max. Max. Max. Impedance Break- Dynamic Total Max. Max. Part Noise Z IF (ΩΩΩΩΩ) down Resis- Capaci- Forward Leakage Number Figure Max. Voltage tance tance Voltage Current HSCH- Barrier NF (dB) Min. Max. SWR V BR (V) R D (ΩΩΩΩΩ)C T (pF) V F (mV) I R (nA) 5314 Medium 7.2 at 200 400 1.5:1 4 16 0.15 500 100

16 GHz

5340 Low 7.5 at 150 350 20 0.10 375 400

26 GHz

Test DC Load Resistance - 0 Ω IR ≤ 10 µAI F = 5 mA V R = 0 V I F = 1 mA V R = 1 V Conditions LO Power = 1 mW f = 1 MHz IF = 30 MHz, 1.5 dB NF *Minimum batch size 20 units. Note: 1. CT = CJ + 0.02 pF (fringing cap). Table IA. Electrical Specifications for RF Tested Diodes at T A = 25°C

Minimum Maximum Maximum Maximum Maximum Part Batch* Breakdown Dynamic Total Forward Leakage Number Matched Voltage Resistance Capacitance Voltage Current HSCH- HSCH- Barrier V BR (V) R D (ΩΩΩΩΩ)C T (pF) V F (mV) I R (nA) 5312 Medium 4 16 0.15 500 100 5310 20 0.10 5332 Low 4 16 0.15 375 400 5330 5331 20 0.10 Test ∆VF ≤ 15 mV I R ≤ 10 µAI F = 5 mA V R = 0 V I F = 1 mA V R = 1 V Conditions @ 5 mA f = 1 MHz *Minimum batch size 20 units. Table IB. Electrical Specifications for DC Tested Diodes at T A = 25°C SPICE Parameters HSCH-5312 HSCH-5330 Parameter Units HSCH-5314 HSCH-5310 HSCH-5340 HSCH-5332 BV V 555 5 CJO pF 0.13 0.09 0.09 0.13 EG eV 0.69 0.69 0.69 0.69 IBV A 10E-5 10E-5 10E-5 10E-5 IS A3 x 10E-10 3 x 10E-10 4 x 10E-8 4 x 10E-8 N 1.08 1.08 1.08 1.08 RS Ω 91 3 1 3 9 PB V 0.65 0.65 0.5 0.5 PT 222 2 M0 . 5 0 . 5 0 .5 0.5 Typical Detector Characteristics at TA = 25°C Medium Barrier and Low Barrier (DC Bias) Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS –54 dBm 20 µA Bias, RL = 100 kΩ Video Bandwidth = 2 MHz Voltage Sensitivity γ 6.6 mV/ µWf = 10 GHz Video Resistance R V 1400 Ω Low Barrier (Zero Bias) Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS –44 dBm Zero Bias, R L = 10 MΩ Video Bandwidth = 2 MHz Voltage Sensitivity γ 10 mV/ µWf = 10 GHz Video Resistance R V 1.8 M Ω

Figure 1. Typical forward characteristics for Figure 2. Typical forward characteristics for Figure 5. Typical admittance characteristics with external bias. Figure 3. Typical noise figure vs. frequency. Figure 4. Typical admittance characteristics with 1 mA self bias.

Figure 7. Typical admittance characteristics with external bias. Figure 6. Typical admittance characteristics with self bias.

18 GHz

20 µA DC Bias 50 µA DC Bias 150 µA DC Bias Part Numbers R j (Ω)C j (pF) R j (Ω)C j (pF) R j (Ω)C j (pF) HSCH-5340 1300 0.09 560 0.09 187 0.10 20 µADC Bias 50 µADC Bias 150 µADC Bias Part Numbers R S (Ω)R j (Ω)C j (pF) R S (Ω)R j (Ω)C j (pF) R S (Ω)R j (Ω)C j (pF) For product information and a complete list of distributors, please go to our website: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries . Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. Obsoletes AV01-0127EN AV01-0484EN September 21, 2006 0.03 pF 0.04 nH 11 Ω 0.1 nH 0.11 pF Rj Cj 0.02 pF Rs Rj0.1 nH Cj