HSC945 HSMC | Alldatasheet
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MICROELECTRONICS CORP. Spec. No. : HE6517 Issued Date : 1995.02.11 Revised Date : 2002.12.16 Page No. : 1/4 HSC945 HSMC Product Specification HSC945 NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC945 is designed for using driver stage of AP amplifier and low speed switching applications. Absolute Maximum Ratings
- Maximum Temperatures
- Maximum Power Dissipation
- Maximum Voltages and Currents (Ta=25°C) Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=100uA, IE=0 BVCEO 50 - - V IC=1mA. IB=0 BVEBO 5 - - V IE=10uA. IC=0 ICBO - - 100 nA VCB=60V, IE=0 IEBO - - 100 nA VEB=5V, IB=0 *VCE(sat) - 0.1 0.3 V IC=100mA, IB=10mA *hFE1 50 - - VCE=6V, IC=0.1mA *hFE2 135 - 600 VCE=6V, IC=1mA fT 150 - 600 MHz VCE=6V, IC=10mA, f=100MHz Cob - - 4 pF VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE2 Rank Q P K Range 135-270 200-400 300-600 TO-92
MICROELECTRONICS CORP. Spec. No. : HE6517 Issued Date : 1995.02.11 Revised Date : 2002.12.16 Page No. : 2/4 HSC945 HSMC Product Specification Characteristics Curve Current Gain & Collector Current 100 1000 1 10 100 Collector Current-IC (mA) hFE hFE @ VCE=6V 25oC 75oC 125oC Saturation Voltage & Collector Current 100 1000 0.1 1 10 100 Collector Current-IC (mA) Saturation Voltage (mV) VCE(sat) @IC=10IB o C o C 125oC Saturation Voltage & Collector Current 100 1000 0.1 1 10 100 Collector Current-IC (mA) Saturation Voltage (mV) VBE(sat) @ IC=10IB o C 75oC 125oC On Voltage & Collector Current 0.1 0.1 1 10 100 Collector Current (mA) On Voltage (mV) VBE(sat) @ IC=10IB Capacitance & Reverse-Biased Voltage 0.1 1 10 100 Reverse Biased Voltage (V) Capacitance (Pf) Cob Cutoff Frequency & Collector Current 100 1000 1 10 100 Collector Current (mA) Cutoff Frequency (MHz)... fT @ VCE=5V
MICROELECTRONICS CORP. Spec. No. : HE6517 Issued Date : 1995.02.11 Revised Date : 2002.12.16 Page No. : 3/4 HSC945 HSMC Product Specification Safe Operating Area 100 1000 10000 1 10 100 Forward Voltage (mV) Collector Current (mA) PT=1ms PT=100ms PT=1s PD-Ta 100 150 200 250 300 0 50 100 150 200 Ambient Temperature-Ta(oC) Power Dissipation-PD (mW)
MICROELECTRONICS CORP. Spec. No. : HE6517 Issued Date : 1995.02.11 Revised Date : 2002.12.16 Page No. : 4/4 HSC945 HSMC Product Specification TO-92 Dimension *: Typical D 0.0142 0.0220 0.36 0.56 α1 - *5° - *5° F 0.1323 0.1480 3.36 3.76 α3 - *2° - *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material:
- Lead: 42 Alloy; solder plating
- Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
- HSMC reserves the right to make changes to its products without notice.
- HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 A D B C I α 1 E F α 2 α 3 GH Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package Marking: HC 495 Date Code Control Code S Rank