HS5758-10A RFHIC | Alldatasheet

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Technical content

GaN Hybrid Power Amplifier HS5758-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 6 Version 0.2 Product Features Applications

  • GaN on SiC HEMT
  • In/Out Impedance Matching
  • Surface Mount Hybrid Type
  • Small Size & Mass
  • High Efficiency
  • Low Cost
  • Custom design available
  • Fixed Wireless, Wimax
  • ISM Band

Description

The HS5758-10A is designed for 802.16 WiMAX system application frequencies from 5725 ~ 5875MHz. This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power Density. Electrical Specifications @ Vds =28V, Ta=25°C PARAMETER UNIT MIN TYP MAX CONDITION Frequency Range MHz 5725 - 5875 ZS = ZL = 50 ohm Power Gain dB - 18.5 - - Gain Flatness - ±1 - - Input Return Loss - - -5 - Pout dBm - 41 - Out power at Sat dBm - 32 - Out power at 3% EVM Drain Efficiency % - 45 - - Idq mA - 50 - Quiescent Current Idq1 - 120 - Idq2 Ids mA - - 1200 Sa turated Current Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate V oltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain V oltage and last turn off the Gate voltage Note 802.16 OFDM, 3.5MHz Channel BW, 64QAM, 5mS Burst, Symbol Length of 59, PAR 9.8 @ 0.01% Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 2 - Dimension ㎜ 20.5 x 15 x 4.8 - Package Type : NP-26

GaN Hybrid Power Amplifier HS5758-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 6 Version 0.2 Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs1 Vgs2 Drain-Source Voltage V 84 Vds Gate Current mA 5.7 Ig Operating Junction Temperature °C 225 T J Operating Case Temperature °C -40 ~ 85 T C Storage Temperature °C -40 ~ 100 T STG Operating Voltages PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V - 28 - Vds Gate Voltage (on-stage) V - Vgs1@Idq1 -2 Vgs 1 Gate Voltage (on-stage) V - Vgs2@Idq2 -2 Vgs 2 Gate Voltage (off-stage) V - -8 - Vgs 1 Gate Voltage (off-stage) V - -8 - Vgs 2 Block Diagram

GaN Hybrid Power Amplifier HS5758-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 6 Version 0.2 Application Circuit HS5758-10A Input_50ohm Output_50ohm 10uF/50V (Tantal) Vds Vgs1 Vgs2 10uF/16V (Tantal) 2 5 3 6 10uF/16V (Tantal) Performance Charts * Bias condition @ Idq1 50mA, Idq2 120 mA, Vds =+28V , Ta=25℃ Saturation Power & Ids vs. Frequency Saturation Power & PAE vs. Frequency Power Gain @ Psat vs. Frequency EVM vs. Pout, Frequency=5.725GHz

GaN Hybrid Power Amplifier HS5758-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 6 Version 0.2 Package Dimensions (Type: NP-26) * U n i t : m m [ i n c h ] | T o l e r a n c e : ±0.15[.006] ▲ T o p V i e w ▲ S i d e V i e w ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function

1 RF Input 2 Vgs1 4 RF Output 5 Vdd2

  • - 3 Vgs2 - - 6 Vdd1 Recommended Pattern * Mounting Configuration Notes 1. Ground / thermal via holes are critical for the proper performance of this device. 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via hole region contacts the heatsink. 4. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink. 5. RF trace width depends upon the PCB material and construction. 6. Use 1 oz. Copper minimum.

GaN Hybrid Power Amplifier HS5758-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 6 Version 0.2 Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative V oltage Bias which operates alongside a Positive V oltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circ uit. Therefore, users need to either apply positive voltages an d negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs1 and Vgs2. 3. Apply Vds. 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds, and then, turn off the Vgs1 and Vgs2. 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram -

GaN Hybrid Power Amplifier HS5758-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 6 Version 0.2 Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Measured reflow profile

Ordering Information

Part Number Package Design HS5758-10A -R (Reel) -B (Bulk) -EVB (Evaluation Board)

Revision History

Part Number Release Date Version Modification Data Sheet Status HS5758-10A 2012.11.28 0.2 New datasheet format. Preliminary HS5758-10A 2012.2.18 0.1 - Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including wi thout limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expect ed to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078.