HS139142-18A RFHIC | Alldatasheet

Document overview

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Technical content

GaN Hybrid Power Amplifier HS139142-18A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 6 V ersion 0.2 Product Features Applications

  • GaN on SiC HEMT
  • In/Out Impedance Matching
  • Surface Mount Hybrid Type
  • Small Size & Mass
  • High Efficiency
  • Low Cost
  • Point to Point
  • Radio system

Description

The HS139142-18A is designed for Radio system application frequencies from 13900 ~ 14200MHz. This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, high power density. Electrical Specifications @ Vgs,Idq=150mA, Vds =40V, Ta=25℃, 50ohm System PARAMETER UNIT MIN TYP MAX CONDITION Operating Frequency MHz 13900 - 14200 ZS = ZL = 50ohm Operating Bandwidth MHz - 300 - - Input Return Loss dB - -10 - - Output Pulse Power @ P3dB dBm - 42.5 - Pulse Width =100us, 10%Duty Input Pulse Power dBm - 36.5 - Power Gain @ P3dB dB - 6 - Gain Flatness dB - 1.5 - IMD dBc - 30 - 30dBm@2tone Duty Cycle % - 10 - - Pulse Width us - 100 - - Efficiency % - 35 - - Caution The drain voltage must be supplied to the device after the gate vol tage is supplied Turn on : Turn on the Gate V oltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain V oltage and last turn off the Gate voltage Note HS Series have internal DC blocking capacitors a t the RF input and output ports Package Type : NP-18

GaN Hybrid Power Amplifier HS139142-18A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 6 V ersion 0.2 Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 1 - Dimension ㎜ 15 x 10 x 5.4 - Absolute Maximum Ratings PARAMETER UNIT RA TING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs Drain-Source Voltage V 50 Vds Gate Current mA 4.8 Ig Operating Junction Temperature °C 225 TJ Operating Case Temperature °C -40 ~ 65 TC Storage Temperature °C -40 ~ 100 TSTG Operating Voltages PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V - 40 - Vds Gate Voltage (on-stage) V - Vgs@Idq -2 Vgs Gate Voltage (off-stage) V - -8 - Vgs Block Diagram +Vds -Vgs Input Matching Circuit Output Matching Circuit Input Output

GaN Hybrid Power Amplifier HS139142-18A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 6 V ersion 0.2 Performance Charts * Test condition: Test Frequency = 14.1GHz, Vgs@Idq=150mA, Vds =+40V, Ta=25℃ Output Power vs. Input Power Power Gain vs. Output Power 20 25 30 35 40 Pout (dBm) Input Power (dBm) Output Power 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 Power Gain (dB) Output Power (dBm) Power Gain Ids vs. Output Power Efficiency vs. Output Power 200 400 600 800 1000 1200 1400 1600 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 Current (mA) Output Power (dBm) Current 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 Efficiency (%) Output Power (dBm) Efficiency

GaN Hybrid Power Amplifier HS139142-18A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 6 V ersion 0.2 Package Dimensions (Type: NP-18) * Unit: mm[inch] | Tolerance: ±0.15[.006] * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function

1 GND 3 GND 5 RF Output 7 Drain Bias (+Vds)

2 RF Input 4 GND 6 GND 8 Gate Bias (-Vgs)

  • Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove h eat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure opt imal thermal performance.

GaN Hybrid Power Amplifier HS139142-18A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 6 V ersion 0.2 Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative V oltage Bias which operates alongside a Positive V oltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built -in Bias Sequence Circuit. There fore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs 3. Apply Vds 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds, and then, turn off the Vgs 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram -

GaN Hybrid Power Amplifier HS139142-18A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 6 V ersion 0.2 Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Measured reflow profile

Ordering Information

Part Number Package Design HS139142-18A -R (Reel) -B (Bulk) -EVB (Evaluation Board)

Revision History

Part Number Release Date Version Modification Data Sheet Status HS139142-18A 2014.06.26 0.2 A mass of mechanical specification is changed. Preliminary HS139142-18A 2013.04.12 0.11 IMD Preliminary HS139142-18A 2013.03.14 0.1 Newly created. Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any pr oduct at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or inci dental damages. RFHIC products are not intended for use in life support equipment or application where malfunction o f the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, emplo yees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for R FHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078.