HS107117-20A RFHIC | Alldatasheet

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Technical content

GaN Hybrid Power Amplifier HS107117-20A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 7 V ersion 0.3 Product Features Applications

  • GaN on SiC HEMT
  • In/Out Impedance Matching
  • Surface Mount Hybrid Type
  • Small Size & Mass
  • High Efficiency
  • Low Cost
  • Point to Point
  • Radio system

Description

The HS107117-20A is designed for Radio system application frequencies from 10700 ~ 11700MHz. This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, high power density. Electrical Specifications @ Vgs,Idq=150mA, Vds =40V, Ta=25℃, 50ohm System PARAMETER UNIT MIN TYP MAX CONDITION Operating Frequency MHz 10700 - 11700 ZS = ZL = 50ohm Operating Bandwidth MHz - 800 - - Input Return Loss dB - -10 - - Output Pulse Power @ P4dB dBm - 43 - Pulse Width =100us, 10%Duty Input Pulse Power dBm - 35 - Power Gain @ P4dB dB - 8 - Gain Flatness dB - 1 - IMD @ 33dBm 2tone dBc - 35 - Continuous Wave (Idq = 50mA) 2nd HB @ 40dBm 1tone dBc - 35 - Duty Cycle % - 10 - - Pulse Width us - 100 - - Efficiency % - 40 - - Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate V oltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain V oltage and last turn off the Gate voltage Note HS Series have internal DC blocking capacitors at the RF input and output ports Package Type : NP-18

GaN Hybrid Power Amplifier HS107117-20A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 7 V ersion 0.3 Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 1 - Dimension ㎜ 15 x 10 x 5.4 - Absolute Maximum Ratings PARAMETER UNIT RA TING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs Drain-Source Voltage V 50 Vds Gate Current mA 4.8 Ig Operating Junction Temperature °C 225 TJ Operating Case Temperature °C -40 ~ 65 TC Storage Temperature °C -40 ~ 100 TSTG Operating Voltages PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V - 40 - Vds Gate Voltage (on-stage) V - Vgs@Idq -2 Vgs Gate Voltage (off-stage) V - -8 - Vgs Block Diagram +Vds -Vgs Input Matching Circuit Output Matching Circuit Input Output

GaN Hybrid Power Amplifier HS107117-20A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 7 V ersion 0.3 Performance Charts * Test condition: Test Frequency = 10.7~11.7GHz, Vgs@Idq=150mA, Vds =+40V , Ta=25℃ Small Signal Gain vs. Frequency Input Return Loss vs. Frequency -10 Frequency(GHz) Small Signal Gain(dB) -15 -10 -20 Frequency(GHz) Input Return Loss(dB) Output Power vs. Frequency Power Gain vs. Frequency Pout (dBm) Frequency (GHz) Input +35dBm Input +38dBm Pgain (dB) Frequency (GHz) Input +35dBm Input +38dBm Ids vs. Output Power Efficiency vs. Output Power 1.2 1.4 1.6 1.8 Current (A) Frequency (GHz) Input +35dBm Input +38dBm Efficiency (%) Frequency (GHz) Input +35dBm Input +38dBm

GaN Hybrid Power Amplifier HS107117-20A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 7 V ersion 0.3 * Test condition: Test Frequency = 10.7~11.7GHz, Vgs@Idq=50mA, Vds =+40V , Ta=25℃ Output Power vs. Input Power Power Gain vs. Output Power 24 26 28 30 32 34 36 38 40 42 Pout (dBm) Input Power (dBm) 10.9GHz 11.3GHz 11.7GHz 35 36 37 38 39 40 41 42 43 44 45 Power Gain (dB) Output Power (dBm) 10.9GHz 11.3GHz 11.7GHz Ids vs. Output Power Efficiency vs. Output Power 0.0 0.4 0.8 1.2 1.6 2.0 35 36 37 38 39 40 41 42 43 44 45 Current (A) Output Power (dBm) 10.9GHz 11.3GHz 11.7GHz 35 36 37 38 39 40 41 42 43 44 45 Efficiency (%) Output Power (dBm) 10.9GHz 11.3GHz 11.7GHz IMD vs. Output Power 2tone single level Carrier Output power, 10 MHz spacing 2nd HB vs. Output Power 1tone single level Carrier Output power 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 IMD (dBc) 2tone Single level carrier Output Power (dBm) 10.7GHz 11.2GHz 11.7GHz 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 2nd HB (dBc) Output Power (dBm) 11.2GHz

GaN Hybrid Power Amplifier HS107117-20A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 7 V ersion 0.3 Package Dimensions (Type: NP-18) * Unit: mm[inch] | Tolerance: ±0.15[.006] * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function

1 GND 3 GND 5 RF Output 7 Drain Bias (+Vds)

2 RF Input 4 GND 6 GND 8 Gate Bias (-Vgs)

  • Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be d esigned to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will d epend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsin k 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.

GaN Hybrid Power Amplifier HS107117-20A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 7 V ersion 0.3 Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative V oltage Bias which operates alongside a Positive V oltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built -in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs 3. Apply Vds 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds, and then, turn off the Vgs 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram -

GaN Hybrid Power Amplifier HS107117-20A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 7 / 7 V ersion 0.3 Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Measured reflow profile

Ordering Information

Part Number Package Design HS107117-20A -R (Reel) -B (Bulk) -EVB (Evaluation Board)

Revision History

Part Number Release Date Version Modification Data Sheet Status HS107117-20A 2014.06.26 0.3 A mass of mechanical specification is changed . Preliminary HS107117-20A 2014.02.19 0.2 Product Name Changes. Preliminary HS109115-20A 2013.03.14 0.1 Newly created. Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any pr oduct at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyer s to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, inc luding without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfun ction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for R FHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078.