HM0525-10A RFHIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
GaN Hybrid Power Amplifier HM0525-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 7 Version 1.0 Product Features Applications
- GaN on SiC HEMT
- In/Out Impedance Matching
- Surface Mount Hybrid Type
- Small Size & Mass
- High Efficiency
- Low Cost
- Custom design available
- Radio System
Description
The HM0525-10A is designed for Radio system application frequencies from 500 ~ 2500MHz. This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, high power density. Electrical Specifications @ Vds =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX CONDITION Frequency Range MHz 500 - 2500 ZS = ZL = 50 ohm Power Gain dB - 20 - Amp : Idq1 = 50mA Idq2 = 250mA Input Power = 20dBm Gain Flatness - ±1 - Input Return Loss - - -4 Pout @ Psat dBm 39 40 - PAE % 20 30 - Ids mA - - 1500 Supply Voltage V -3.5 -3 -2 Gate Bias ( Vgs1 and Vgs2) V - 28 - Main Bias(Vds) Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate V oltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain V oltage and last turn off the Gate voltage Note HM Series have internal DC blocking capacitors at the RF input and output ports Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 2 - Dimension ㎜ 20.5 x 15 x 4.8 - Package Type : NP-1E
GaN Hybrid Power Amplifier HM0525-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 7 Version 1.0 Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs1 Vgs2 Drain-Source Voltage V 50 Vds Gate Current mA 5.7 Ig Operating Junction Temperature °C 225 T J Operating Case Temperature °C -40 ~ 65 T C Storage Temperature °C -40 ~ 100 T STG Operating Voltages PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V 28 Vds Gate Voltage (on-stage) V - Vgs1@Idq1 -2 Vgs 1 Gate Voltage (on-stage) V - Vgs2@Idq2 -2 Vgs 2 Gate Voltage (off-stage) V - -8 - Vgs 1 Gate Voltage (off-stage) V - -8 - Vgs 2 Block Diagram
GaN Hybrid Power Amplifier HM0525-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 7 Version 1.0 Application Circuit Part List Location Model No. Spec. Maker C6, C8 1812C225K101CT 2.2uF / 100V WALSIN C1, C3 C3216X7R1C106K 10uF / 16V TDK C2, C4, C5, C7 201CHA101JSLE 100pF TEMEX Evaluation Board RO4350B 2Layer, 30mil ROGERS
GaN Hybrid Power Amplifier HM0525-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 7 Version 1.0 Performance Charts * Bias condition Vgs1@Idq1=50mA, Vgs2@Idq2= 250mA, Vds =+28V , Ta=25℃ Output Power vs. Input Power Power Gain vs. Input Power Pout[dBm] Frequency[GHz] +16dBm +18dBm +20dBm +22dBm +24dBm Power Gain[dB] Frequency[GHz] +16dBm +18dBm +20dBm +22dBm +24dBm Ids vs. Input Power PAE vs. Input Power 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Current[mA] Frequency[GHz] +16dBm +18dBm +20dBm +22dBm +24dBm PAE[%] Frequency[GHz] +16dBm +18dBm +20dBm +22dBm +24dBm
GaN Hybrid Power Amplifier HM0525-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 7 Version 1.0 Package Dimensions (Type: NP-1E) * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function
1 RF Input 4 Vgs1 8 GND 11 GND
2 GND 5 Vds 9 GND 12 GND
3 GND 6 Vgs2 10 RF Output 13 GND
- - 7 Vds - - 14 GND Recommended Pattern Recommended Pattern Detail ‘A’ * Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting scre ws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Detail Pattern ‘A’
GaN Hybrid Power Amplifier HM0525-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 7 Version 1.0 Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative V oltage Bias which operates alongside a Positive V oltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circ uit. Therefore, users need to either apply positive voltages an d negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs1 and Vgs2. 3. Apply Vds. 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds, and then, turn off the Vgs1 and Vgs2. 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram -
GaN Hybrid Power Amplifier HM0525-10A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 7 / 7 Version 1.0 Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Measured reflow profile
Ordering Information
Part Number Package Design HM0525-10A -R (Reel) -B (Bulk) -EVB (Evaluation Board)
Revision History
Part Number Release Date Version Modification Data Sheet Status HM0525-10A 2012.11.28 1.0 Newly created & New datasheet format. - HM0525-10A 2012.03.06 0.2 Change by Recommended Pattern Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including wi thout limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expect ed to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078.