HM0220-05A RFHIC | Alldatasheet

Document overview

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Technical content

GaN Hybrid Power Amplifier HM0220-05A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 6 Version 1.6 Product Features Applications

  • GaN on SiC HEMT
  • In/Out Impedance Matching
  • Surface Mount Hybrid Type
  • Small Size & Weight
  • High Efficiency
  • Low Cost
  • Custom design available
  • Radio System
  • Medical Device

Description

HM0220-05A have a high performance from 200 ~ 2000MHz. It has developed for Radio and TRS applications. Using metal-Lid and AlN-board, it’s effective for thermal problems. This HM0220-05A is designed using Pout of 5W under Pin of 4dBm. Electrical Specifications @ Vds1 =8V , Vds2 =24V, Vgs2@Idq2, Ta=25℃ PARAMETER UNIT MIN TYP MAX CONDITION Frequency Range MHz 200 - 2000 ZS = ZL = 50 ohm Pout dBm - 37 - Amp : Idq1 = 120mA Idq2 = 250mA Input Power= +2dBm Power Gain dB 31 35 - Input Return Loss -5 -10 - PAE % 30 40 - Ids mA - 525 650 IMD dBc -21 -25 - Pout=31dBm (each tone) Two-tone space=1MHz Rising Time of Pout > 90% Falling Time of Pout < 90% µsec - 10 - Lead and Trail Edge of Drive Bias(+8V) = 10µsec Supply Voltage V - 8 - Vds1 - V gs2@Idq2 - Vgs2 - 24 - Vds2 Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate V oltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain V oltage and last turn off the Gate voltage Note HM Series have internal DC blocking capacitors at the RF input and output ports Package Type : NP-1A

GaN Hybrid Power Amplifier HM0220-05A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 6 Version 1.6 Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 2 - Dimension mm 21.1 x 10.6 x 2.5 Outermost Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs2 Drain-Source Voltage V 50 Vds2 Gate Current mA 4 Ig2 Operating Junction Temperature °C 225 T J Operating Case Temperature °C -40 ~ 85 T C Storage Temperature °C -55 ~ 100 T STG Stability into mismatch - Stable into VSWR ≤ 10:1 (from 100kHz to 8.5GHz at all phase angles at Pin=-30dBm ~ +7dBm and Vds1= 8V and Vds2=12~24V) Operating Voltages Gate Voltage 2 (off-state) condition is defined without any RF signal at the input (pin #1). PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage 1 V - 8 10 Vds1 Drain Voltage 2 V - 24 28 Vds 2 Gate Voltage 2 (on-state) V - V gs2@Idq2 -1.5 Vgs 2 Gate Voltage 2 (off-state) V - -5 - Vgs 2 Block Diagram

GaN Hybrid Power Amplifier HM0220-05A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 6 Version 1.6 Performance Charts * Bias condition @ Idq1=120mA, Vds1=8V , Idq2=250mA, Vgs2@Idq2, Vds2 =+24V , Ta=25℃ Ids2 @ Pout>37dBm vs. Frequency Total PAE @ Pout>37dBm vs. Frequency Power Gain @ Pout>37dBm vs. Frequency Input Power @ Pout>37dBm vs. Frequency IMD vs. Frequency (each-tone of 31dBm and two-tone space of 1MHz) P1dB vs. Frequency

GaN Hybrid Power Amplifier HM0220-05A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 6 Version 1.6 Package Dimensions (Type: NP-1A) * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top & Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function

1 Input 5 Vds2 9 GND

2 Vds1 6 Output 10 GND

3 Floating 7 GND - -

  • Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting scre ws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.

GaN Hybrid Power Amplifier HM0220-05A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 6 Version 1.6 Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative V oltage Bias which operates alongside a Positive V oltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circ uit. Therefore, users need to either apply positive voltages an d negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs2. 3. Apply Vds1 and Vds2. 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds1 and Vds2, and then, turn off the Vgs2. 3. Remove all connections. Turn On - Sequence Timing Diagram -

GaN Hybrid Power Amplifier HM0220-05A Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 6 Version 1.6 Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Measured reflow profile

Ordering Information

Part Number Package Design HM0220-05A -R (Reel) -B (Bulk) -EVB (Evaluation Board)

Revision History

Part Number Release Date Version Modification Data Sheet Status HM0220-05A 2014.01.20 1.6 Vgs(on-stage) of ‘Operating V oltages’ is changed to ‘-1.5V’. - HM0220-05A 2013.11.01 1.5 Storage temperature is changed to ‘-55°C’ and ‘Stability into mismatch’ is added to ‘Absolute Maximum Ratings’. HM0220-05A 2013.03.22 1.4 Gate V oltage 2 (off-state) condition is changed from ‘-8V’ to ‘-5V’ without any RF input signal. RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including wi thout limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078.