HKSO8-TP ROITHNER | Alldatasheet
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Technical content
iC-HK, iC-HKB
155 MHz LASER SWITCH
Rev F1, Page 1/8
FEATURES
♦ Laser switch for frequencies from CW up to 155 MHz ♦ Spike-free switching of the laser current ♦ Dual switching inputs with independent current control ♦ Operates as a voltage-controlled current source ♦ Pulsed operation with up to 700 mA per channel ♦ CW operation with up to 150 mA per channel ♦ Simple power control at pin CI ♦ Control to the mean of the laser power in conjunction with iC-WK/L (CW laser diode driver) ♦ Supplement to iC-WK/L for pulsed operation ♦ Thermal shutdown ♦ Protective ESD circuitry ♦ iC-HKB for drivingblue laser diodes ♦ Option: extended temperature range
APPLICATIONS
♦ Data transmission ♦ Laser scanning devices ♦ Optical storage devices PACKAGES SO8 thermal pad MSOP8 thermal pad BLOCK DIAGRAM Suitable laser diode configurations: N LD MD LD MD LD OVERTEMP. SHUTDOWN iC−HK/B CI LDK EN1 EN2 AGND2AGND1 GND 42 6 VDD MD LD RK1 RK2 CI CLDA RM MD M P M2M1 LDA MDA CI iC−WK LD Operation with constant current (uncontrolled): Operation in conjunction with iC−WK (power controlled): MDK P M/N Copyright © 2009 iC-Haus http://www.ichaus.com
iC-HK, iC-HKB Rev F1, Page 2/8
DESCRIPTION
Laser Switch iC-HK/B enables the spike-free switch- ing of laser diodes with well-defined current pulses at frequencies ranging from DC to 155 MHz. The diode current is determined by the voltage at pin CI and by the resistors RK1 and RK2. The two fast switches are controlled independently via CMOS inputs EN1 and EN2. The laser diode can thus be turned on and off or switched between different cur- rent levels defined by the ratio of RK1 and RK2. Each channel can be operated on 150 mA DC and up to 700 mA pulsed current depending on the fre- quency, duty cycle and heat dissipation. The integrated thermal shutdown feature prevents damage from excessive temperature. iC-HK/B supplements the laser diode driver iC-WK which uses the monitor current of the laser diode to control the laser power. iC-WK therefore controls the voltage at pin CI in such a way that the mean value of the emitted laser power is constant (APC), pro- viding there is a constant duty cycle and a switching frequency higher than 100 kHz. OVERTEMP.− SHUTDOWN iC−HK/B CI LDK EN1 EN2 AGND2AGND1 GND 42 6 VDD LD RK1 RK2 CLDA M2M1 +3.5..5 V V(CI) Figure 1: Operation as a voltage-controlled cur- rent source TRANSIENT OVER CURRENT R AGND LDK MDK CI MDA NQ LDA GND VCC PROTECTION D OVERTEMP. iC−WK FEEDBACK MON./ 0.5 V VREF 42 6 100 nF CVCC 47 nF.. CI 1 uF CLDA MD LD +3.5..5 V 0 V RM 200W..50 kW 0.. RK2 LED RGND CM CLDA 2.2 nF CLD M1 M2 EN2 DGND 0.. RK1 LDK VDD EN1 EN2 iC−HK/B AGND1 AGND2 GND CI OVERTEMP.− SHUTDOWN CVDD EN1 100 nF Figure 2: Operation of iC-HK/B in conjunction with CW driver iC-WK (see application information on optional parts/connections)
iC-HK, iC-HKB Rev F1, Page 3/8 PACKAGES SO8tp, MSOP8tp to JEDEC PIN CONFIGURATION SO8tp EN1 AGND2 LDK EN2 VDD HKAGND1 GND CI Code... ...yymm PIN CONFIGURATION MSOP8tp EN1 AGND1 LDK AGND2 CI VDD GND EN2 iC−HK Code PIN FUNCTIONS No. Name Function
1 EN1 Channel 1 Switching Input
2 AGND1 Channel 1 Reference Ground
3 LDK Driver Output (LD Cathode)
4 AGND2 Channel 2 Reference Ground
5 EN2 Channel 2 Switching Input
6 GND Ground
7 VDD +5 V Supply Voltage
8 CI Voltage Reference for Current Control
The Thermal Padis to be connected to a Ground Plane on the PCB.
iC-HK, iC-HKB Rev F1, Page 4/8 ABSOLUTE MAXIMUM RATINGS Beyond these values damage may occur; device operation is not guaranteed. Item Symbol Parameter Conditions Unit No. Min. Max. G001 VDD Voltage at VDD -0.7 6 V G002 I(VDD) Current in VDD -10 150 mA G003 V(CI) Voltage at CI -0.7 6 V G004 I(LDK) Current in LDK DC current -10 300 mA G005 I(AGND1) Current in AGND1 DC current -150 10 mA G006 I(AGND2) Current in AGND2 DC current -150 10 mA G007 V() Voltage at EN1, EN2, AGND1 and AGND2 -0.7 6 V G008 V(LDK) Voltage at LDK iC-HK -0.7 6 V iC-HKB -0.7 15 V G009 Vd() Susceptibility to ESD at all pinsHBM, 100 pF discharged through 1.5 kΩ 1 kV G010 Tj Operating Junction Temperature -40 150 °C G011 Ts Storage Temperature Range -40 150 °C THERMAL DATA Item Symbol Parameter Conditions Unit No. Min. Typ. Max. T01 Ta Operating Ambient Temperature Range (extended range on request) -25 85 °C T02 Rthja Thermal Resistance Chip/Ambient (SO8) soldered to PCB, no additional cooling areas 170 K/W therm. pad soldered to approx. 2 cm² cooling area 30 50 K/W T03 Rthja Thermal Resistance Chip/Ambient (MSOP8) soldered to PCB, therm. pad soldered to approx. 2 cm² cooling area 30 60 K/W All voltages are referenced to ground unless otherwise stated. All currents into the device pins are positive; all currents out of the device pins are negative.
iC-HK, iC-HKB Rev F1, Page 5/8
ELECTRICAL CHARACTERISTICS
Item Symbol Parameter Conditions Tj Fig. Unit No. °C Min. Typ. Max. Total Device 001 VDD Permissible Supply Voltage 3.5 5.5 V
002 I(VDD) Supply Current in VDD CW operation 0 80 µA
003 I(VDD) Supply Current in VDD pulsed operation,
f(EN1, EN2) = 150 MHz 0 150 mA 004 V(LDK) Permissible Voltage at LDK iC-HK 0 5.5 V iC-HKB 0 12 V
005 Vc(CI)hi Clamp Voltage hi at CI Vc(CI) = V(CI) – VDD,
I(CI) = 10 mA, other pins open 0.4 1.25 V
006 Vc(EN)hi Clamp Voltage hi at EN1, EN2Vc(EN) = V(EN) – VDD,
I(EN) = 1 mA, other pins open 0.4 1.25 V
007 Vc()lo Clamp Voltage lo at VDD, LDK,
CI, EN1, EN2, AGND1, AGND2 I() = -10 mA, other pins open -1.25 -0.4 V
008 Ipd() Pull-Down Current at CI, EN1,
1 5 µA
009 Toff Overtemperature Shutdown 110 150 °C
Laser Control LDK, CI, EN1, EN2
101 Icw(LDK) Permissible CW Current in LDK
(per channel) 150 mA
102 Ipk(LDK) Permissible Pulsed Current in
LDK (per channel) f > 100 kHz, thi/T < 1:10 700 mA 107 Vs(LDK) Saturation Voltage at LDK I(LDK) = 40 mA 1.2 V I(LDK) = 60 mA 1.3 V I(LDK) = 150 mA,iC-HK 1.5 V I(LDK) = 150 mA,iC-HKB 1.8 V
108 I0(LDK) Leakage Current in LDK ENx = lo, V(LDK) = VDD 0 10 µA
109 tr() LDK Current Rise Time Iop = 150 mA, I(LDK): 10%→ 90%Iop 3 1.5 ns 110 tf() LDK Current Fall Time Iop(LDK) = 150 mA, I(LDK): 90%→ 10%Iop 3 1.5 ns 111 tp() Propagation Delay V(ENx) → I(LDK) ENx hi↔ lo, V(50%)→ I(50%) 1 3 ns
112 Vt(ENx) Input Threshold Voltage 33 50 67 %VDD
113 V(CI) Permissible Voltage at CI 0 5.5 V 114 Vt(CI) Threshold Voltage at CI I(LDK) < 5 mA 0.75 1.15 V
115 CR() Current Matching Chan-
V(CI) = 0...VDD, I(LDK) = 30...300 mA, RK1 = RK2 0.9 1 1.1
iC-HK, iC-HKB Rev F1, Page 6/8 ELECTRICAL CHARACTERISTICS DIAGRAMS I(LDK) t Iop 10 % I op 90 % I op t r t f Figure 3: Laser current pulse in LDK RKx= 0 W RKx= 1 W RKx= 2 W RKx= 3 W RKx= 4 W RKx= 5 W RKx= 6 W RKx= 8 W RKx= 10 W RKx= 15 W RKx= 20 W RKx= 30 W RKx= 50 W I(LDK) V(CI) 100 150 200 250 300 mA Figure 4: Diode current vs. V(Cl) at Tj = 27 °C RKx = 0W RKx = 1W RKx = 2W RKx = 3W RKx = 4W RKx = 6W RKx = 8W RKx = 10W RKx = 15W RKx = 20W RKx = 30W RKx = 50W I(LDK) RKx = 5W 700 mA 100 200 300 400 500 600 V(CI) Figure 5: Diode current vs. V(Cl) at Tj = 27 °C V(CI) I(LDK) 3.5 4 4.5 5 V 200 400 600 800 1000 1200 mA RKx = 0W RKx = 1W RKx = 2W RKx = 3W RKx = 4W RKx = 5W RKx = 6W RKx = 8W RKx = 10W RKx = 15W RKx = 20W RKx = 30W RKx = 50WFigure 6: Diode current vs. V(Cl) at Tj = 27 °C 0 0.5 1 1.5 2 100 150 200 V(CI) max min I(LDK) 250 mA RKx = 0W Figure 7: Diode current variation vs. V(CI) at V(LDK) = 3 V 0 1 2 3 4 5 V 0.5 1.5 A V(CI) max min I(LDK) RKx = 0W Figure 8: Diode current variation vs. V(CI) at V(LDK) = 3 V
iC-HK, iC-HKB Rev F1, Page 7/8 DESCRIPTION OF FUNCTIONS Laser current dependency of V(Cl), RK1, RK2 Depending on the laser diode different diode currents are necessary to obtain the required laser power. The values for V(CI), RK1 and RK2 can be determined for the required diode current at room temperature from the opposite diagram. A parallel to the x axis must be drawn through the desired diode current. Either RKx can be obtained for a required value of V(CI) or the respective value of V(VI) can be achieved for a given RKx. Thermal Shutdown iC-HK/B is protected by an integrated thermal shut- down feature. When the shutdown temperature is reached both channels are locked. RKx= 0 W RKx= 1 W RKx= 2 W RKx= 3 W RKx= 4 W RKx= 5 W RKx= 6 W RKx= 8 W RKx= 10 W RKx= 15 W RKx= 20 W RKx= 30 W RKx= 50 W I(LDK) V(CI) 100 150 200 250 300 mA 1.753 2 Figure 9: Diode current vs. V(Cl) at Tj = 27 °C APPLICATION NOTES Application notes for iC-HK are available as a separate document. iC-Haus expressly reserves the right to change its products and/or specifications. An Infoletter gives details as to any amendments and additions made to the relevant current specifications on our internet websitewww.ichaus.de/infoletter; this letter is generated automatically and shall be sent to registered users by email. Copying – even as an excerpt – is only permitted with iC-Haus approval in writing and precise reference to source. iC-Haus does not warrant the accuracy, completeness or timeliness of the specification on this site and does not assume liability for any errors or omissions in the materials. The data specified is intended solely for the purpose of product description. No representations or warranties, either express or implied, of merchantability, fitness for a particular purpose or of any other nature are made hereunder with respect to information/specification or the products to which information refers and no guarantee with respect to compliance to the intended use is given. In particular, this also applies to the stated possible applications or areas of applications of the product. iC-Haus conveys no patent, copyright, mask work right or other trade mark right to this product. iC-Haus assumes no liability for any patent and/or other trade mark rights of a third party resulting from processing or handling of the product and/or any other use of the product. As a general rule our developments, IPs, principle circuitry and range of Integrated Circuits are suitable and specifically designed for appropriate use in technical applications, such as in devices, systems and any kind of technical equipment, in so far as they do not infringe existing patent rights. In principle the range of use is limitless in a technical sense and refers to the products listed in the inventory of goods compiled for the 2008 and following export trade statistics issued annually by the Bureau of Statistics in Wiesbaden, for example, or to any product in the product catalogue published for the 2007 and following exhibitions in Hanover (Hannover-Messe). We understand suitable application of our published designs to be state-of-the-art technology which can no longer be classed as inventive under the stipulations of patent law. Our explicit application notes are to be treated only as mere examples of the many possible and extremely advantageous uses our products can be put to.
iC-HK, iC-HKB Rev F1, Page 8/8
ORDERING INFORMATION
Type Package Order Designation iC-HK SO8tp iC-HK SO8 MSOP8tp iC-HK MSOP8 iC-HKB SO8tp iC-HKB SO8 MSOP8tp iC-HKB MSOP8 For technical support, information about prices and terms of delivery please contact: iC-Haus GmbH Tel.: +49 (61 35) 92 92-0 Am Kuemmerling 18 Fax: +49 (61 35) 92 92-192 D-55294 Bodenheim Web: http://www.ichaus.com GERMANY E-Mail: sales@ichaus.com Appointed local distributors:http://www.ichaus.de/support_distributors.php