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H igh Diode Semiconductor HDK3400A Marking: SOT-23-3L Plastic-Encapsulate MOSFET N Channel MOSFET D G SOT- 23 - 3 L

  • R0A Product Summary S V (BR)DSS R DS(on) MAX I D V 32mΩ@10V 5.8A 45m Ω@2.5V 38mΩ@4.5V High dense cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability Load/Power Switching Interfacing Switching ● Parameter Symbol Value Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±12 V Continuous Drain Current I D 5.8 A Drain Current-Pulsed (note 1) I DM 30 A Power Dissipation P D 450 mW Thermal Resistance from Junction to Ambient (note 2) R θJA 313 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~+150 ℃

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-source breakdown voltage V (BR) DSS V GS = 0V, I D =250µA 30 V Zero gate voltage drain current I DSS V DS =24V,V GS = 0V 1 µA Gate-source leakage current I GSS V GS =±12V, V DS = 0V ±100 nA On characteristics (note 3) V GS =10V, I D =5.8A 29 32 m Ω V GS =4.5V, I D =5A 32 38 m Ω Drain-source on-resistance (note 3) R DS(on) V GS =2.5V,I D =4A 40 45 mΩ Forward tranconductance g FS V DS =5V, I D =5A 8 S Gate threshold voltage V GS(th) V DS GS , I D =250µA 0.7 0.9 1.4 V Dynamic Characteristics (note 4,5) Input capacitance C iss 1155 pF Output capacitance C oss 108 pF Reverse transfer capacitance C rss V DS =15V,V GS =0V,f =1MHz 84 pF Gate resistance R g V DS =0V,V GS =0V,f =1MHz 3.6 Ω Switching Characteristics (note 4,5) Turn-on delay time t d(on) 5 ns Turn-on rise time t r 7 ns Turn-off delay time t d(off) 40 ns Turn-off fall time t f V GS =10V,V DS =15V, R L =2.7Ω,R GEN =3Ω 6 ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) V SD I S =1A,V GS =0V 1 V Note : 1. Repetitive Rating : Pulse widt h limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not su bject to production testing.

H igh Diode Semiconductor Typical Characteristics 0.01 0.1 123456 0123456789 1 0 100 125 150 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 T a =75 Pulsed Pulsed T a =100 V SD I S T a =25 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =2V V GS =3V,4V,5V,6V Output Characteristics V GS =1.5V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) V GS =2.5V T a =25 Pulsed V GS =10V V GS =4.5V T a =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) I D ——R DS(ON) T a =100 T a =25 ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) V GS ——R DS(ON) I D =5A V DS =3V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T a =100 T a =25 I D =250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T j ( )

H igh Diode Semiconductor Package Outline Dimensions SOT-23-3L Suggested Pad Layout SOT-23-3L Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E1 1.500 1.700 0.059 0.067 E 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 /g5370 °8 °0 °8 ° Symbol Dimensions In Millimeters Dimensions In Inches 0.950(BSC) 0.037(BSC)

Reel Taping Specifications For Surface Mount Devices-SOT-23-3L H igh Diode Semiconductor