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H igh Diode Semiconductor HD3400 Marking: SOT-23 Plastic-Encapsulate MOSFET N Channel MOSFET D G SOT- 23

  • R0 Product Summary S V (BR)DSS R DS(on) MAX I D V 35mΩ@10V 5.8A 52m Ω@2.5V 40mΩ@4.5V z High dense cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability Load/Power Switching Interfacing Switching ● Parameter Symbol Value Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±12 V Continuous Drain Current I D 5.8 A Drain Current-Pulsed (note 1) I DM 30 A Power Dissipation P D 350 mW Thermal Resistance from Junction to Ambient (note 2) R θJA 357 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~ +150 ℃

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-source breakdown voltage V (BR) DSS V GS = 0V, I D =250µA 30 V Zero gate voltage drain current I DSS V DS =24V,V GS = 0V 1 µA Gate-source leakage current I GSS V GS =±12V, V DS = 0V ±100 nA On characteristics V GS =10V, I D =5.8A 35 mΩ V GS =4.5V, I D =5A 40 mΩ Drain-source on-resistance (note 3) R DS(on) V GS =2.5V,I D =4A 52 mΩ Forward tranconductance g FS V DS =5V, I D =5A 8 S Gate threshold voltage V GS(th) V DS GS , I D =250µA 0.7 1.4 V Dynamic Characteristics (note 4,5) Input capacitance C iss 105 0 pF Output capacitance C oss 99 pF Reverse transfer capacitance C rss V DS =15V,V GS =0V,f =1MHz 77 pF Gate resistance R g V DS =0V,V GS =0V,f =1MHz 3.6 Ω Switching Characteristics (note 4,5) Turn-on delay time t d(on) 5 ns Turn-on rise time t r 7 ns Turn-off delay time t d(off) 40 ns Turn-off fall time t f V GS =10V,V DS =15V, R L =2.7Ω,R GEN =3Ω 6 ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) V SD I S =1A,V GS =0V 1 V Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not su bject to production testing.

H igh Diode Semiconductor Typical Characteristics 0123 45 02 46 8 1 0 100 150 200 250 300 350 400 0 200 400 600 800 1000 1200 1E-4 1E-3 0.01 0.1 25 50 75 100 125 0.5 0.6 0.7 0.8 0.9 1.0 4 8 12 16 20 V GS =10.0V 4.5V 3.0V V GS =2.5V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) Pulsed V GS =2.0V GATE TO SOURCE VOLTAGE V GS (V) ON-RESISTANCE R DS(ON) (mΩ) I D =5A T a =25 Pulsed V GS ——R DS(ON) DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) V DS =5.0V Pulsed T a =100 T a =25 Transfer Characteristics SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (mV) T a =25 Pulsed V SD I S — — Output Characteristics THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T J ( ) I D =250uA Threshold Voltage VGS=10V DRAIN CURRENT I D (A) ON-RESISTANCE R DS(ON) (mΩ) I D ——R DS(ON) T a =25 Pulsed VGS=4.5V VGS=2.5V

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor