HD30U100-F-CT HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o 30A
- VRRM
- High surge current capability
Applications
- Rectifier Marking HD30U100(F)CT H igh Diode Semiconductor TO- 220 AB ITO- 220 AB CASE PIN 2PIN 1 PIN 3 2 3 1 2 3 HD TO94X2 Schottky Rectifier HD30U100(F)CT 100V Low Vf Item Symbol Unit Test Conditions Repetitive Peak Reverse Voltage V RRM V Average Rectified Output Current I o A 60HZ Half-sine wave, Resistance load, Tc(Fig.1) 30.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 200 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition Peak Forward Voltage V F V I F =15.0A Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ 0.05 I RRM2 Ta =125℃ Thermal Resistance(Typical) R θJ-C /W℃ Between junction and case 2.0 Notes: Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate 100 HD30U100(F)CT 0.71(TYP) 0.76(MAX) HD30U100(F)CT
H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Tc( 70 90 110 130 150 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) Tj=25 Tj=75 0 20 40 60 80 100 0.001 0.01 0.1 1.0 Tj=125 IFSM(A) 2 5 10 20 50 100 FIG2:Surge Forward Current Capadility Number of C y cles at 60Hz 100 150 8.3ms Single Half Since-Wave JEDEC Method 200 0.2 0.5 VF(V) IF(A) FIG3:Instantaneous Forward Voltage 1.0 5.0 Ta=25 0.8 0.9 1.00.10 1.1 1.2
H igh Diode Semiconductor TO- 220 TO- 220 AB ITO- 220 AB
H igh Diode Semiconductor Part Number Quantity Size（mm） tube 50 pieces 530*33*7 inner box 1000 pieces 558*150*40 outer container 5000 pieces 570*235*170 TO- 220 P acking Information