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H igh Diode Semiconductor HD2321 Marking SOT-23 Plastic-Encapsulate MOSFET P Channel MOSFET D G SOT- 23

  • S21 TrenchFET Power MOSFET Product Summary S V (BR)DSS R DS(on) MAX I D -20 V 57mΩ@-4.5V -2.9A 110m Ω@-1.8V 76mΩ@-2.5V PA Switch Load Switch Parameter Symbol Value Unit Drain-Source Voltage V DS - 2 0 Gate-Source Voltage V GS ±12 V Continuous Drain Current I D -2.9 Pulsed Drain Current I DM -12 Continuous Source-Drain Diode Current I S -0.59 A M a x i m u m P owe r D i s s i p a t i o n P D 0.35 W Thermal Resistance from Junction to Ambient R θJA 357 ℃/W Junction Temperature T J 150 Storage Temperature T stg -50 ~+150

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Unit Static Drain-source breakdown voltage V (BR) DSS V GS = 0V, I D =-10µA -20 V Gate-source leakage I GSS V DS =0V, V GS =±12V ±100 nA Zero Gate voltage drain current I DSS V DS =-16V, V GS =0V -1.0 µA Gate-source threshold voltage V GS(th) V DS GS , I D =-250µA -0.4 -0.9 V V GS =-4.5V, I D =-3.3A 0.057 V GS =-2.5V, I D =-2.8A 0.076 Drain-source on-state resistance R DS(on) V GS =-1.8V, I D =-2.3A 0.110 Ω Forward tranconductance g fS V DS =-5V, I D =-3.3A 3 S Forward diode voltage V SD V GS =0V,I S =-1.6A -1.2 V Dynamic Input capacitance a,b C iss 715 Output capacitance a,b C oss 170 Reverse transfer capacitance a,b C rss V DS =-6V,V GS =0V,f =1MHz 120 pF Total Gate charge a Q g 13 nc Gate-Source charge a Q gs 1.2 nc Gate-Drain charge a Q gd V DS =-6V,V GS =-4.5V,I D =-3.3A 2.2 nc Switching a,b Turn-on delay Time t d(on) Rise time t r Turn-off delay time t d(off) Fall time t f V GEN =-4.5V,V DD =-6V, I D =-1.0A,R G =6Ω, R L =6Ω ns Notes : a. Pulse Test : pulse width ≤300µs, duty cycle ≤2%. E. These parameters have no way to verify.

H igh Diode Semiconductor Typical Characteristics -10 -0.1 -10 -0 -1 -2 -3 -4 -12 -16 100 150 200 250 300 -0 -2 -4 -6 -8 100 200 300 400 500 T a =25 Pulsed T a =25 Pulsed Transfer Characteristics DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) -20 T a =25 Pulsed -0.3 V SD I S SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =-2.0V V GS =-1.5V V GS V GS =-1.0V Output Characteristics DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) T a =25 Pulsed V GS =-1.8V V GS =-2.5V V GS =-4.5V ON-RESISTANCE R DS(ON) Ω DRAIN CURRENT I D (A) T a =25 Pulsed I D =-3.3A I D R DS(ON) —— V GS R DS(ON) ON-RESISTANCE R DS(ON) Ω GATE TO SOURCE VOLTAGE V GS (V)

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor