HD2300 HDSEMI | Alldatasheet

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H igh Diode Semiconductor HD2300

  • Extreme fast switches Marking: SOT-23 Plastic-Encapsulate MOSFET N Channel MOSFET D G SOT- 23
  • S0 TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge Product Summary V (BR)DSS R DS(on)MAX I D V m Ω 4.5 V 5.1 A m Ω .5V m Ω 1.8 V Parameter Symbol Value Unit Drain Source Voltage V DS V Gate Source Voltage V GS V Continuous Drain Current I D 5.1 A Pulsed Drain Current (1) I D M A Power Dissipation P D W Thermal Resistance from Junction to Ambient (2) R θJA Junction Temperature T J 150 Storage Temperature T STG 55~ +150 S

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Type Max Unit STATIC CHARACTERISTICS Drain source breakdown voltage V (BR)DSS V GS = 0V, I D 250µ A V Zero gate voltage drain current I DSS V DS V,V GS = 0V µA Gate body leakage current I GSS V GS V, V DS = 0V ± 100 n A Gate threshold voltage (3) V GS(th) V DS GS , I D 250µ A 0.6 V Drain source on resistance (3) R DS(on) V GS 4.5 V, I D A mΩ V GS .5V, I D A V GS 1.8 V, I D =2A Forward tranconductance (3) g FS V DS V, I D A S DYNAMIC CHARACTERISTICS Input Capacitance Ciss VDS =8V,VGS =0V,f=1MHz 523 pF Output Capacitance Coss Reverse Transfer Capacitance Crss SWITCHING CHARACTERISTICS Turn on delay time td(on) VGS=4.5V,VDS=10V, ID=1A,RGEN=6Ω 10.5 ns Turn on rise time tr 4.5 Turn off delay time td(off) 27.5 Turn off fall time tf 4.3 8.6 Total gate charge Qg V DS V,V GS =4.5V,I D A 6.4 8.2 nC Gate source charge Q gs 1.8 2.3 Gate drain charge Q gd 1.3 1.9 S OURCE DRAIN D IODE CHARACTERISTICS Body Diode Voltage (3) V SD I S A, V GS = 0V 0.8 V Continuous Source Drain Diode Current I S T C =25 1.7 A Notes: 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤80μs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting.

H igh Diode Semiconductor Typical Characteristics

H igh Diode Semiconductor

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor