HD20G HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode Glass passivated chip ● HD20G H igh Diode Semiconductor SMAK Notes: pad areas HD20G 2000V Item Symbol Unit Conditions Repetitive Peak Reverse Voltage VRRM V Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load,Ta=75℃ Surge(Non-repetitive)Forward Current I FSM A 60HZ Half-sine wave,1 cycle,Ta=25℃ 30 Junction Temperature T j ℃ -55~+150 Storage Temperature T stg ℃ -55 ~ +150 2000 HD20G Item Max Peak Forward Voltage VFM V IFM=1A 2.0 Peak Reverse Current IRRM1 μA VRM=VRRM Ta=25℃ 5 IRRM2 Ta=125℃ 50 Symbol Unit Conditions 1400 V RMS V Maximum RMS Voltage
H igh Diode Semiconductor FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 0.2 0.4 0.6 1.0 100 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A S ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length Ta (℃) 0.8 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.002 0.02 0.2 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE IF(A) VF(V)
H igh Diode Semiconductor SMAK SMAK 0.106(2.70) 0.096(2.45) 4.12 1.8
H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMA