HD122 HSMC | Alldatasheet
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MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.12.01 Revised Date : 2000.10.01 Page No. : 1/4 HSMC Product Specification HD122 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Description
The HD122 is designed for medium power linear and switching applications. Absolute Maximum Ratings (Ta=25°C)
- Maximum Temperatures
- Maximum Power Dissipation
- Maximum Voltages and Currents Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 100 - - V IC=1mA *BVCEO 100 - - V IC=100mA BVEBO 5 - - V IE=100uA ICEO - - 2 mA VCE=50V ICBO - - 1 mA VCB=100V IEBO - - 2 mA VBE=5V *VCE(sat)1 - - 2.5 V IC=1.5A, IB=30mA *VCE(sat)2 - - 2.8 V IC=2A, IB=40mA *VBE(on) - - 2.5 V IC=3A, VCE=3V *hFE1 1000 - - IC=0.5A, VCE=3V *hFE2 1000 - - IC=3A, VCE=3V *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.12.01 Revised Date : 2000.10.01 Page No. : 2/4 HSMC Product Specification Characteristics Curve Collector Gain & Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current-IC (mA) hFE -40°C hFE @ VCE=4V 25°C hFE @ VCE=4V Sturation Voltage & Collector Current 100 1000 10000 100 1000 10000 Collector Current-IC (mA) Sturation Voltage (mV) -40°C VCE(sat) @ IC=100IB 25°C VCE(sat) @ IC=100IB Sturation Voltage & Collector Current 100 1000 10000 100 1000 10000 Collector Current-IC (mA) Sturation Voltage (mV) 25¢XC VBE(sat) @ IC=100IB -40¢XC VBE(sat) @ IC=100IB On Voltage & Collector Current 100 1000 10000 10 100 1000 10000 Collector Current-IC (mA) On Voltage (mV) 25¢XC VBE(on) @ VCE=4V -40¢XC VBE(on) @ VCE=4V Switching Time & Collector Current 0.1 11 0 Collector Current-IC (A) Switching Times (us) Tstg VCC=30V, IC=250, IB1= -250IB2 Tf Ton Capacitance & Reverse-Biased Voltage 100 1000 0.1 1 10 100 Reverse-Biased Voltage (V) Capacitance (pF) Cob
MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.12.01 Revised Date : 2000.10.01 Page No. : 3/4 HSMC Product Specification Safe Operating Area 100 1000 10000 100000 1 10 100 Forward-VCE (V) Collector Current-IC (mA) PT=1ms PT=100ms PT=1s Power Derating 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 0 50 100 150 200 Temperature (°C) -- Ta/Tc PD/PD(max) -- Normalized Power Dissipation
MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.12.01 Revised Date : 2000.10.01 Page No. : 4/4 HSMC Product Specification TO-126ML Dimension *:Typical H 0.0462 0.0562 1.17 1.42 Notes : 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material :
- Lead : 42 Alloy ; solder plating
- Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
- HSMC reserves the right to make changes to its products without notice.
- HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Tel : 886-3-5983621~5 Fax : 886-3-5982931 Tel : 886-3-5977061 Fax : 886-3-5979220 N D E M L K F I A B C H J O G Style : Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126ML Plastic Package Marking : HSMC Logo Part Number Date Code Product Series Rank Ink Marking