HD1131 SIEMENS | Alldatasheet
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Technical content
Features
@ Excellent readability by ambient light @ Excellent character appearance @ Evenly lighted segments @ Wide viewing angle 2p = 50 ° hoe @ Mitred corners on segments @ Grey package provides optimum contrast @ |C-compatible @ Right hand decimal Type Color of Luminous intensity/ | Ordering code emission | Segment Ir=10mA_ Iv (ued) HD 1131R | 550 (typ.) Q68000-A7821 HD 1131 O} common super-red | 4000 (typ.) Q68000-A7822 anode HD 1131 G 4500 (typ.) Q68000-A7820 HD 1133 R | 550 (typ.) Q68000-A7873 HD 1133 0 | common super-red | 4000 (typ.) Q68000-A7872 cathode HD 1133 G 4500 (typ.) Q68000-A7871 Semiconductor Group 1 2.93
Maximum Ratings (7a = 25 °C) Operating temperature range Cc Storage temperature range < Lead soldering temperature, 2 mm from base [7s |260 — | Cforss Peak forward current per segment or DP ") te<10us HD 113*R Tew mA HD 113*O, -G dew mA OC forward current per segment or DP * HD 113*R Ir mA HD 113*O, -G Te mA Reverse voltage per segment or DP Coe ee Total power dissipation mw Ta < 45°C 1) Do not exceed maximum average current per segment (see graph of the permissible pulse handling capability) 2) Derate maximum average current above Ta = 75 °C at 0.5 mA/°C per segment Semiconductor Group 2
Characteristics (7 = 25 °C) Parameter | Values | Unit [ min | typ. | ma | Luminous intensity per segment. /r = 10 mA HD 1131 R, HD 1133 R 180 | 550 ued HD 1131 O, HD 11330 110 | 400 ned HD 1131 G, HD 1133 G 0 |o ned Peak wavelength, /r = 10 mA HD 1131 R, HD 1133 R peak 660 nm HD 1131 O, HD 1133 0 a pek 630 nm HD 1131 G, HD 1133G Apesh 565 nm Dominant wavelength (Digit average) . HD 1131 R, HD 1133 R na - |nm HD 1131 O, HD 11330 Atom 625 | nm HD 1131 G, HD 1133G dom 575 | nm Forward voltage per segment*, /r = 20 mA HD 1131 R, HD 1133 R Ve Vv HD 1131 O, HD 11330 Ve Vv HD 1131 G, HD 1133G VF Vv Break down voltage per segment* Ver Vv In=10 pA Max. thermal resistance [Rem [= [=] 100] °C/W/Seg *) AQL = 0.4% Semiconductor Group 3
Relative spectral emission Ir = f (A) V(A) = Standard eye response curve fl ‘ yy green \\ y o Lbabaet 7” [heb Did 450 xO 550 600 60 nm Bud may Forward current /- =f (V+) Rel. luminous intensity I v/v (2 °c) = f (7) Ta= 25°C Ir=10mMA 193 ap ed rh tree reat i ; | mA _ ia} | 1 4 red “green 7 4 io? + f + + Giese) i i 3 { green a | ee ee | red 107 0 . "i re! D} 2 4 6 8 ¥ 10 0 ry 4c oo 80 “C 100 oh =i Semiconductor Group 4
Permissible pulse handling capability Permissible pulse handling capability Ie=f (tp), Tas 45°C Ir=f (tp), Tas 45°C red super-red, green | sll eb ah Uy ruzsiesit Serre? pais asatiiimiii ose pe Sa Sees mii HEE Oa ie eee a0 0 ow CTT wl i Setar yoo LTH wit it ill 10> 10"! 10 10? ms 107 wo 10°" wt 10" ms 107 ot, ss Max. permissible forward current Rel. luminous intensity Iv/Ly (10 ma)=f (I) Ir =f (Ta) Ta- 25°C 40 — eee 10) ik ES ee eat ; = Ty | | | 1 eee 0 t | pene _| , | | i nay SS Sesiii qrean Saat oeeeettil } je Ati 4 [ree Super—ree “TTT IN | Tey, eet eee 0 2 0 60 50 °C 100 10? 10' ma 107 Semiconductor Group 5
Total power dissipation P ta = f(T a) ma 100 § 0 2 60) )66O)COBD C100 Package Outlines WZ252018, 4 47S ht | a HD 1131 rat Monte ° | a = des e c =| 4254 efsiie] fepgape ett, Arcemmon ancde
4 HO SS
who HOI 133 "| Pal : Wee e c io Ceommon cofhode Semiconductor Group 6