HD1105 SIEMENS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

@ Excellent readability by ambient light @ Excellent character appearance @ Evenly lighted segments @ Wide viewing angle 2» = 50 ° iy | | ec @ Mitred corners on segments @ Grey package provides optimum contrast @ |C-compatible @ Right hand decimal Type Color of Luminous intensity/ | Ordering code emission | Segment Ir=10mMA_ Iv (ucd) HD 1105R | 550 (typ.) Q68000-A5741 HD 1105 O} common super-red | 3500 (typ.) Q68000-A5766 anode HD 1105 G 4000 (typ.) Q68000-A6350 HD 1107R | 550 (typ.) Q68000-A5743 HD 1107 0} common super-red | 3500 (typ.) Q68000-A5772 cathode HD 1107G 4000 (typ.) Q68000-A6352 Semiconductor Group 1 2.93

Maximum Ratings (7a = 25 °C) Operating temperature range Cc Storage temperature range < Lead soldering temperature, 2 mm from base [7s |260 — | Cforss Peak forward current per segment or DP " te <10us HD 110*R Tew mA HD 110*O, -G dew mA OC forward current per segment or DP * HD 110*R Ir mA HD 110*O, -G Te mA Reverse voltage per segment or DP Ce ee Total power dissipation mw Ta < 45°C 1) Do not exceed maximum average current per segment (see graph of the permissible pulse handling capability) 2) Derate maximum average current above Ta = 75 °C at 0.5 mA/°C per segment Semiconductor Group 2

Characteristics (7 = 25 °C) Parameter | Values | Unit [ min | typ. | ma | Luminous intensity per segment. /r = 10 mA HD 1105 R, HD 1107R 180 | 550 ped HD 1105 O, HD 11070 1100] 3500 ped HD 1105 G, HD 1107G 1100] 4000 ned Peak wavelength, /r = 10 mA HD 1105 R, HD 1107R peak 660 nm HD 1105 O, HD 11070 a pek 630 nm HD 1105 G, HD 1107G Apesh 565 nm Dominant wavelength (Digit average) . HD 1105 R, HD 1107R Asm - nm HD 1105 O, HD 11070 Atom 625 | nm HD 1105 G, HD 1107G dom 575 | nm Forward voltage per segment*, /r = 20 mA HD 1105 R, HD 1107R Ve Vv HD 1105 0, HD 11070 Ve Vv HD 1105 G, HD 1107G VF Vv Break down voltage per segment* Vv In =10 pA Ver Max. thermal resistance [Rem [= [> | 120] °C/W/Seg *) AQL = 0.4% Semiconductor Group 3

Relative spectral emission Ir = f (A) V(A) = Standard eye response curve 7 s. fl ‘ yy green \\ y o Lbabaet 7” [heb Did 450 xO 550 600 60 nm Bud may Forward current /- =f (V+) Rel. luminous intensity I v/v (2 °c) = f (7) Ta = 25°C Ir=10mMA | ia tree mA _ ia} | 1 4 red “green 7 4 io? + f + + Giese) i i 3 { green a | ee ee | red PoP ob ob od a) 107 0 . "i re! D} 2 4 6 8 ¥ 10 0 ry 4c oo 80 “C 100 oh =i Semiconductor Group 4

Permissible pulse handling capability Permissible pulse handling capability Ie =f (te), Tas 45°C Ir =f (tp), Ta< 45°C red super-red, green tie oe 05s). mmeneee |) eee eeiis: mmaw eis 1 |

2 AH i

0 ee (0° eet 10° iri 19° ma wo? rot 810! mas 10) 172497 WF 10! ms 10% _t aaa Max. permissible forward current Rel. luminous intensity [v/Ly (10 ma) =f (Ir) Ir =f (Ts) Ta- 25°C —— Ne 1 joreen a iti +t | aa Super-rec a er i a re 7 mr Semiconductor Group 5

Total power dissipation P w = f(T «) mw 435 + + Fea vw || | | sf] n oy 60 60 °C 100 Package Outlines er eet ao 1105 as, i F i J _iseos_ fOnis05 1 a 7 i” 1 fF 7] 10-2

228 S zal ‘leep 1 b

5 ee : a HE 34 |gson ie Fed ee i is ie a a me err Aztomman asoge “jp ggiat” DIE Sp vate! 4254 bo "] Fp 40 1107 = OS HON1107 ‘ ay a 4 q-: cyl b £5 Blu, ic we S42 C=eemman cathode wes Semiconductor Group 6