HD10U100-F-CT HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o 10A
- VRRM
- High surge current capability
Applications
- Rectifier Marking HD10U100(F)CT H igh Diode Semiconductor TO- 220 AB ITO- 220 AB CASE PIN 2PIN 1 PIN 3 2 3 1 2 3 HD TO60X2 Schottky Rectifier 100V Low Vf HD10U100(F)CT Item Symbol Unit Test Conditions Repetitive Peak Reverse Voltage V RRM V Average Rectified Output Current I o A 60HZ Half-sine wave, Resistance load, Tc(Fig.1) 10.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 120 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition Peak Forward Voltage V F V I F =5.0A Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ 0.1 I RRM2 Ta =125℃ Thermal Resistance(Typical) R θJ-C /W℃ Between junction and case 2.0 Notes: Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate 2.5 100 HD10U100(F)CT HD10U100(F)CT 0.68(TYP) 0.74(MAX)
H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Tc( 70 90 110 130 150 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 10 100 210 120 150 180 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) Tj=25 Tj=75 0 20 40 60 80 100 0.001 0.01 0.1 1.0 Tj=125 0.2 0.5 VF(V) IF(A) FIG3:Instantaneous Forward Voltage 1.0 5.0 Ta=25 0.8 0.9 1.00.10 1.1 1.2
H igh Diode Semiconductor TO- 220 TO- 220 AB ITO- 220 AB
H igh Diode Semiconductor Part Number Quantity Size（mm） tube 50 pieces 530*33*7 inner box 1000 pieces 558*150*40 outer container 5000 pieces 570*235*170 TO- 220 P acking Information