HD1075 SIEMENS | Alldatasheet
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Technical content
Features
@ Excellent readability by ambient light @ Excellent character appearance @ Evenly lighted segments @ Wide viewing angle 2» = 50 ° 4 @ Mitred corners on segments @ Grey package provides optimum contrast @ |C-compatible @ Right hand decimal Type Color of Luminous intensity/ | Ordering code emission | Segment 1-=10mMA_ Iv (ued) HD 1075R | 550 (typ.) Q68000-A5747 HD 1075 O|} common super-red | 2500 (typ.) Q68000-A5746 anode HD 1075G 3000 (typ.) Q68000-A6346 HD 1077R | 550 (typ.) Q68000-A5759 HD 1077 O| common super-red | 2500 (typ.) Q68000-A5758 cathode HD 1077G 3000 (typ.) Q68000-A6348 Semiconductor Group 1 2.93
Maximum Ratings (7a = 25 °C) Operating emperalure range a Storage temperature range < Lead soldering temperature, 2 mm from base [7s |260 — | Cforss Peak forward current per segment or DP " te<10us HD 107*R Tem mA HD 107* O, -G den mA OC forward current per segment or DP * HD 107*R Ir 25 mA HD 107*O, -G Te 17 mA Pulse peak forward current per segment ee ee Reverse voltage per segment or DP }va |6 iV Total power dissipation mw Tas 45°C 1) Do not exceed maximum average current per segment (see graph of the permissible pulse handling capability) 2) Derate maximum average current above 7’ = 75 °C at 0.5 mA/°C per segment Semiconductor Group 2
Characteristics (7 = 25 °C) Parameter | Values | Unit [ min | typ. | ma | Luminous intensity per segment. /r = 10 mA HD 1075 R, HD 1077R 180 ucd HD 1075 O, HD 10770 700 wed HD 1075 G, HD 1077G 700 ped Peak wavelength, /r = 10 mA HD 1075 R, HD 1077R A peak 660 nm HD 1075 O, HD 10770 A peak 630 nm HD 1075 G, HD 1077G 1. poak 565 nm Dominant wavelength (Digit average) HD 1075 R, HD 1077 R Adom - nm HD 1075 O, HD 10770 Adom 625 | nm HD 1075 G, HD 1077G Adom 575 | nm Forward voltage per segment*, /r = 20 mA HD 1075 R, HD 1077R Ve Vv HD 1075 O, HD 10770 Ve Vv HD 1075 G, HD 1077G VF Vv Break down voltage per segment* Vor Vv In =10 pA Max. thermal resistance pRem [- [> [140] °C/W/Seg *) AQL = 0.4% Semiconductor Group 3
Relative spectral emission Im = f (A) V(A) = Standard eye response curve ” in if KY ‘ peter Ti ii it | |_| Pps.) oo 450 KO $50 500 60 nm ™0 Forward current /r = f (Vr) Rel. luminous intensity I v/lv is °c) = f (Ta) Ta = 25°C le=10mA 103 fet} : sity 20 owanes mA secer- —y : 1 4 4 4 4 | {10s | igreen | 4 to + ‘f : : 4 (ast) + + t + 4 '4 1 T T T ] 10°) # $ $ $ rad o 2 4 i svi 9 2 “ 2 ao 'C 100 Sud -i Semiconductor Group 4
Permissible pulse handling capability Permissible pulse handling capability Ie =f (t,), Tas 45°C Ir =f (te), Tas 45°C red super-red, green Ge mT me CC DER eS jooree Chines fait Caer SOS 1-210" 10" 107 ms 107 fo? rot 8! ms tt ot, mt Max. permissible forward current Rel. luminous intensity [v/Ly (10 ma) =f (/*) Ir =f (Ts) Ta-25°C* ne ; ee 2 + + + 4 + De eee ee ees) red superered 0 20 40 60 50 °C 100 10" w! ma toe =i = Semiconductor Group 5
Total power dissipation P w = f(T «) Per arm wim fg 400 ;—T 300 + + +
200 T T T T
. 9 n 40 50 aT 10 Package Outlines oiT.4 20 ar tee to 107s HL tee re wee reg | Naseer 5 oseun] | Laseom TH _ “7 Titi spin ayy) as bag SME ane iil eas a {Ce ADOT Hplles 135 crew Semiconductor Group 6