DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
HCT802, HCT802TX, HCT802TXV © TT electronics plc Issue A 11/2016 Page 1 OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on), RDS(on) and Gfs. TX and TXV devices are processed to OPTEK’s military screening program paƩerned aŌer MIL‐PRF‐19500. TX products receive a VGS HTRB at 24 V for 48 hrs. at 150° C and a VDS HTRB at 48 V for 260 hrs.at 150° C. Applications: Drivers: Solid State Relays, Lamps, Solenoids, Displays, Memories, etc. Motor Control Power Supply Circuits Features: 6 pad surface mount package VDS = 90V RDS(on) < 5Ω ID(on) N-Channel = 1.5A | P-Channel = 1.1A Two devices selected for VDS ID(on) and RDS(on) similarity Full TX Processing Available Gold plated contacts Part Number Sensor Type VDSS Min ID(ON) (mA) Min Gfs (ms) Min t(ON) / t(OFF) (ns) Max Package HCT801 N & P ‐Channel Enhancement MOSFET 90 1.5 & ‐1.1 170 & 200 15/17 & 50/50 6‐pin Ceramic HCT801TX HCT801TXV
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV Issue A 11/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Absolute Maximum RaƟngs Drain Source Voltage 90V Gate‐Source Voltage ±20 V Drain Current (Limited by Tj max) N‐Channel P‐Channel 1.1A OperaƟng and Storage Temperature -55° C to +150° C Power DissipaƟon TA = 25°C (Both devices equally driven) 0.5 W Total TA = 25°C (Both devices equally driven) 1.5 W Total (1) (TS = Substrate that the package is soldered to) Note: 1) This raƟng is provided as an aid to designers. It is dependent upon mounƟng material and methods and is not measurable as an outgoing test. 2) Reverse polarity for P‐Channel device Electrical CharacterisƟcs (TA = 25° C unless otherwise noted) SYMBOL PARAMETER DEVICE B=BOTH MIN MAX UNITS TEST CONDITIONS BVDSS Drain‐Source Breakdown B 90(2) V ID = 10 µA(2), VGS = 0 VTH Gate Threshold Voltage N 0.75 2.5 V VGS = VDS, ID = 1 mA P ‐ 2.0 ‐ 4.5 V ID = ‐1 mA IGSS Gate‐Body Leakage B ±100 nA VGS = ± 20 V, VDS = 0 IDSS Zero Gate Voltage Drain Current B 10(2) µA VDS = 90 V(2), VGS = 0 V B 500(2) µA Tj = 150° C ID(on) On‐State Drain Current N 1.5 A VDS = 25 V, VGS = 10 V P ‐ 1.1 A VDS = ‐15 V, VGS = ‐10 V RDS(on) Drain‐Source on Resistance B 5 Ω VGS = 10 V(2), ID = 1 A(2) Gfs Forward Transconductance N 170 mmho VDS = 25V, ID = 0.5 A P 200 Mmho VDS = ‐10 V, ID = ‐0.5 A CISS Input Capacitance N 70 pf VDS = 25 V, VGS = 0 V, f = 1 MHz P 150 pf VDS = ‐25 V, VGS = 0 V, f = 1 MHz COSS Common Source Output Capacitance N 40 pf VDS = 25 V, VGS = 0 V, f = 1 MHz P 60 pf VDS = ‐25 V, VGS = 0 V, f = 1 MHz CRSS Reverse Transfer Capacitance N 10 pf VDS = 25 V, VGS = 0 A, f = 1 MHz P 25 pf VDS = ‐25 V, VGS = 0 A, f = 1 MHz
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV Issue A 11/2016 Page 3 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Electrical CharacterisƟcs (TA = 25° C unless otherwise noted) SYMBOL PARAMETER DEVICE B=BOTH MIN MAX UNITS TEST CONDITIONS t(on) Turn‐on‐Ɵme N 15 ns VDD = 25 v, ID = 1 A, RL = 50 Ω P 50 ns VDD = ‐25 v, ID = ‐0.5 A, RL = 50 Ω t(off) Turn‐off‐Ɵme N 17 ns VDD = 25 v, ID = 1 A, RL = 50 Ω P 50 ns VDD = ‐25 v, ID = ‐0.5 A, RL = 50 Ω