HCT700 SEME-LAB | Alldatasheet
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Technical content
Prelim. 4/94 LAB SEME HCT700 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Continuous Collector Current PD Power Dissipation @ Tamb = 25°C PD Power Dissipation @ Tsubstrate= 25°C Derate above 25°C NPN to PNP Isolation Voltage T J , Tstg Operating and Storage Temperature Range TL Soldering temperature (Vapour phase reflow for 30 sec) TL Soldering temperature (Heated collet for 5 sec) NPN PNP 75 60 50 60 6.0 5.0 800mA 600mA 0.4W 2.0W 11.4mW / °C 500V –65 to +200°C 215°C 260°C MECHANICAL DATA Dimensions in mm (inches) A 6.22 ± 0.13 (0.245 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 1.65 ± 0.13 (0.065 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) 1.27 ± 0.13 (0.05 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 4.32 ± 0.13 (0.170 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 (0.009)rad. A = COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY
APPLICATIONS
(Tcase = 25°C unless otherwise stated)
FEATURES
- SILICON PLANAR EPITAXIAL NPN /PNP TRANSISTORS HERMETIC CERAMIC SURFACE MOUNT PACKAGE CECC SCREENING OPTIONS SPACE QUALITY LEVELS OPTIONS HIGH SPEED SATURATED SWITCHING
DESCRIPTION
Hermetically sealed surface mount complementary transistor pair. The HCT700 transistor die have similar electrical characteristics to the 2N2222A on the NPN side and the 2N2907A on the PNP side. The HCT700 is ideal for high reliability and space applications requiring small size and low weight devices. LCC2 – Ceramic Surface Mount Package Pin 6 EMITTER Pin 2 BASE Pin 3 BASE Pin 5 EMITTER Pin 1 COLLECTOR Pin 4 COLLECTOR
Prelim. 4/94 LAB SEME HCT700 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. NPN PNP Parameter Test Conditions Min. Max. Min. Max. Unit IC = 10/G6D AI E = 0 IC = 10mA I B = 0 IE = 10/G6D AI C = 0 IE = 0 V CB = 60V Tamb = 25°CV CB = 50V IE = 0 V CB = 60V Tamb = 150°CV CB = 50V IC = 0 V EB = 4V Tamb = 25°CV EB = 3.5V VCE = 50V VCE = 10V I C = 0.1mA VCE = 10V I C = 1mA VCE = 10V I C = 10mA VCE = 10V I C = 150mA 1 VCE = 10V I C = 500mA 1 VCE = 10V I C = 10mA Tamb = –55°CI C = 1mA IC = 150mA I B = 15mA 1 IC = 500mA I B = 50mA 1 IC = 150mA I B = 15mA 1 IC = 500mA I B = 50mA 1 VCE = 10V I C = 1mA f = 1kHz V CE = 20V I C = 20mA f = 100MHz I C = 50mA VCE = 10V f = 100kHz to 1MHz VEB = 2V f = 100kHz to 1MHz VEB = 0.5V f = 100kHz to 1MHz VCC = 30V I C = 150mA IB1 = 15mA VCC = 30V I C = 150mA IB1 = IB2 = 15mA ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Collector – Base Breakdown Voltage Collector – Emitter Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut-off Current Emitter– Base Cut-off Current Collector – Emitter Cut-off Current DC Current Gain Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Small Signal Current Gain Small Signal Current Gain Output Capacitance Input Capacitance Turn On Time Turn Off Time 75 60 50 60 6.0 5.0 1.0 50 75 75 325 100 450 100 100 100 300 100 300 30 50 0.30 0.40 1.00 1.60 0.60 1.20 1.30 2.00 2.60 50 100 2.5 2.0 8.0 8.0 35 45 300 300 V V V nA /G6D A nA /G6D A V V pF pF ns ns V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES hFE VCE(SAT VBE(SAT) hfe hfe C obo C ibo ton toff On Characteristics Off Characteristics Small Signal Characteristics Small Signal Characteristics