HCM-1002-H MITSUBISHI | Alldatasheet
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CODE A MITSUBISHI ELECTRIC CORPORATION Prepared by S.Iura S.Iura S.Iura S.Iura Checked by H.Yamaguchi I.Ume zaki I.Umezaki I.Umezaki Approved by M.Yamamoto H.Yamaguchi H.Yamaguchi H.Yamaguchi Spec. NAME Customer’s Std. Spec. DATE 7-Oct.-2002 R E V F 18-May-2004 G 20-May-2004 H 5-Oct.-2004 HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION 1. Type Number CM600HG-130H 2. Structure Flat base type (Insulated package, AlSiC base plate) 3. Application & Customer High power converters & Inverters for traction application 4. Outline See Fig. 1 5. Related Specifications Fig. 1 - Outline drawing
MITSUBISHI ELECTRIC CORPORATION HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE 6. Maximum Ratings Item Symbol Conditions Ratings Unit VGE = 0 V, Tj = −40 °C 5800 VGE = 0 V, Tj = +25 °C 6300 6.1 Collector-emitter voltage V CES VGE = 0 V, Tj = +125 °C 6500 V
6.2 Gate-emitter voltage V GES V CE = 0 V, Tj = 25 °C ± 20 V
IC DC, T c = 80 °C 600 6.3 Collector current ICM Pulse (note 1) 1200 A IE 600 6.4 Emitter current (note 2) IEM Pulse (note 1) 1200 A
6.5 Maximum Collector dissipation P C T c = 25 °C, IGBT part (note 3) 8900 W
6.6 Isolation voltage V iso Charged part to the baseplate
RMS sinusoidal, 60Hz 1min. 10200 V
6.7 Partial discharge Q pd V1 = 6900 Vrms, V2 = 5100 Vrms
60 Hz (acc. to IEC 1287) 10 pC
6.8 Junction temperature T j — −40 ~ +150 °C
6.9 Storage temperature T stg — −40 ~ +125 °C
6.10 Operating temperature T op — −40 ~ +125 °C
6.11 Maximum turn-off switching
current — VCC ≤ 4500 V VGE = ±15 V, Tj = 125 °C [See Fig. 2 (a)] 1200 A
6.12 Short circuit capability
(maximum pulse width) — VCC ≤ 4500 V VGE = ±15 V, Tj = 125 °C [See Fig. 2 (b)] 10 µs
6.13 Maximum reverse recovery
instantaneous power (note 2) — VCC ≤ 4500 V die/dt ≤ 3000 A/µs, Tj = 125 °C [See Fig. 2 (a)] 3600 kW Note 1. Pulse width and repetition rate should be such that junction temperature (T j) does not exceed Topmax rating (125°C). Note 2. The symbols represent characteristics of the ant i-parallel, emitter to collector free-wheel diode (FWDi). Note 3. Junction temperature (T j) should not exceed Tjmax rating (150°C). 7. Electrical Characteristics Limits Item Symbol Conditions Min. Typ. Max. Unit Tj = 25 °C — — 107.1 Collector cutoff current I CES VCE = VCES VGE = 0 V Tj = 125 °C — 30 90 mA
7.2 Gate-emitter threshold voltage V GE(th) IC = 60 mA, VCE = 10 V
Tj = 25 °C 5.0 6.0 7.0 V
7.3 Gate leakage current I GES VGE = VGES, VCE = 0 V
Tj = 25 °C — — 0.5 µA
MITSUBISHI ELECTRIC CORPORATION HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE Limits Item Symbol Conditions Min. Typ. Max. Unit Tj = 25 °C — 5.10 — 7.4 Collector-emitter saturation voltage VCE(sat) IC = 600 A (note 4) VGE = 15 V Tj = 125 °C — 5.00 — V
7.5 Input capacitance C ies VCE = 10 V, VGE = 0 V
f = 100 kHz, Tj = 25 °C — 124 — nF
7.6 Output capacitance C oes VCE = 10 V, VGE = 0 V
f = 100 kHz, Tj = 25 °C — 7.6 — nF
7.7 Reverse transfer capacitance C res VCE = 10 V, VGE = 0 V
f = 100 kHz, Tj = 25 °C — 2.2 — nF
7.8 Total gate charge Q G VCC = 3600 V, IC = 600 A
VGE = 15 V, Tj = 25 °C — 9.9 — µC Tj = 25 °C — 4.00 — 7.9 Emitter-collector voltage (note 2) V EC IE = 600 A (note 4) VGE = 0 V Tj = 125 °C — 3.60 — V 7.10 Turn-on delay time t d(on) — 1.20 — µs 7.11 Turn-on rise time t r — 0.35 — µs
7.12 Turn-on switching energy E on
VCC = 3600 V, IC = 600 A VGE1 = −VGE2 = 15 V RG(on) = 10 Ω, Tj = 125 °C toff = 60 µs (note 5) Inductive load [See Fig. 2 (a), Fig. 3] — 4.50 — J/P 7.13 Turn-off delay time t d(off) — 6.60 — µs 7.14 Turn-off fall time t f1 — 0.50 — µs 7.15 Turn-off fall time t f2 — 3.30 — µs
7.16 Turn-off switching energy E off
VCC = 3600 V, IC = 600 A VGE1 = −VGE2 = 15 V RG(off) = 24 Ω, Tj = 125 °C t(IGBT_off) = 60 µs (note 5) Inductive load [See Fig. 2 (a), Fig. 3] — 3.50 — J/P 7.17 Reverse recovery time (note 2) t rr1 — 1.00 — µs 7.18 Reverse recovery time (note 2) t rr2 — 2.40 — µs
7.19 Reverse recovery charge (note 2) Q rr — 1100 — µC
7.20 Reverse recovery energy (note 2) E rec
VCC = 3600 V, IE = 600 A die/dt = −2000 A/µs Tj = 125 °C toff = 60 µs (note 5) Inductive load [See Fig. 2 (a), Fig. 4] — 2.00 — J/P Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Note 5. t (IGBT_off) definition is shown as follows. t(IGBT_off) time IC
MITSUBISHI ELECTRIC CORPORATION HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE 8. Thermal Characteristics Limits Item Symbol Conditions Min. Typ. Max. Unit
8.1 Thermal resistance R th(j-c)Q Junction to case
IGBT part — — 14.0 K/kW
8.2 Thermal resistance (note 2) R th(j-c)R Junction to case
— — 22.0 K/kW
8.3 Contact thermal resistance R th(c-f) Case to fin (note 6)
Conductive grease applied — 6.0 — K/kW Note 6. Thermal conductivity is 1W/mK with a thickness of 100µm. 9. Mechanical Characteristics Limits Item Symbol Conditions Min. Typ. Max. Unit 9.1 Mounting torque — Main terminal screw : M8 7.0 — 15.0 N·m 9.2 Mounting torque — Mounting screw : M6 3.0 — 6.0 N·m 9.3 Mounting torque — Auxiliary terminal screw : M4 1.0 — 3.0 N·m 9.4 Mass — — — 1.35 — kg
9.5 Comparative tracking index CTI — 600 — — —
9.6 Clearance — — 26.0 — — mm 9.7 Creepage distance — — 56.0 — — mm
9.8 Internal inductance L C-E(int) — — 18 — nH
9.9 Internal lead resistance R C-E(int) Tc = 25 °C — 0.18 — m Ω 10. Shipping Inspection Report Item (note 7) Note 7. One shipping inspection report with the above item val ues is submitted when modules are delivered. The conductions are defined in bracket.
MITSUBISHI ELECTRIC CORPORATION HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE 11. Test Circuit & Definition of Switching Characteristics VCCC = 1 mF LS1 = 500 nH LS2 = 150 nH CS = 25 uF LLOAD Rg Rg VGE3 DUT: diode DUT: IGBT VGE2 VGE1 Fig. 2 (a) – Switching test circuit VGE1 VCCC = 1 mF LS = 100 nH CS = 25 uF Rg DUT: IGBT VGE2 Fig. 2 (b) – Short circuit test circuit
MITSUBISHI ELECTRIC CORPORATION HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE IGBT part: turn-on switching IGBT part: turn-off switching Fig. 3 – Definitions of switching times & energies of IGBT part Diode part: reverse recovery Fig. 4 – Definitions of reverse recovery charge & energy of FWDi part Eon = ic•vce dt Eoff = ic•vce dt Qrr = – ie dt Erec = – ie•vec dt toff tf2 td(off) ton tr td(on) VGE IC VCE 90%IC 10%IC 10%VCE 10%VCE 90%IC 10%IC 10%VGE 90%VGE 50%IC di dt t1 t2 t3 t4 di/dt Irr VEC (VR) IE (IF) 10%VEC 10%IE VCC di dt t5 t6 trr2 trr1 tf1 = (0.9ic − 0.1ic) / (di/dt)
MITSUBISHI ELECTRIC CORPORATION HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION HCM-1002-H (HV-SETSU) PAGE Rev. No. Summary of changes Signature & date − Original S.Iura 7-Oct.-2002 A The following items changed. 6.1, 6.3, 6.4 S.Iura 20-Dec.-2002 B The following item changed. 6.3 The following item added. 6.6 S.Iura 31-Mar.-2003 C The following items changed. 7.4, 7.9, 7.17 The following items added. 9.6, 9.7, 10 S.Iura 10-Dec.-2003 D The following items changed. The following items added. 7.5, 7.6, 7.7, 10 S.Iura 22-Jan.-2004 E The following items changed. 7.4, 7.9, 7.16 The following items added. S.Iura 26-Jan.-2004 F The following items changed. The following items added. 9.8 S.Iura 17-May-2004 G The following item changed. 6.13 S.Iura 20-May-2004 H The following items changed. S.Iura 1-Oct.-2004