HBT139DE HSMC | Alldatasheet

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MICROELECTRONICS CORP. Spec. No. : HE200308 Issued Date : 2003.11.01 Revised Date : 2003.11.28 Page No. : 1/4 HBT139XE HSMC Product Specification HBT139XE Three Quadrant Triac

Description

Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Quick Reference Data Part No. V DRM(V) I T(RMS)(A) I TSM (A) Quadrant HBT139DE 600 16 140 I - II - III Pin Configuration Pin Description

1 Main terminal 1

2 Main terminal 2

G Limtiing Values Symbol Parameter Min. Max. Units VDRM Repetitive peak off-state voltages - 600 V IT(RMS) RMS on-state current - 16 A ITSM Non-repetitive peak on-state current - 140 A I2tI 2t for fusing - 98 A 2S Repetitive rate of rise of on-state current after triggering T2+ G+ -5 0 A / u s T2+ G- - 50 A/us T2- G- - 50 A/us dIT/dt T2- G+ - - A/us IGM Peak gate current - 2 A VGM Peak gate voltage - 10 V PGM Peak gate power - 5 W PG(AV) Average gate power - 0.5 W Tstg Storage Temperature Range - 150 °C Tj Operating junction temperature -40 125 °C TO-220AB

MICROELECTRONICS CORP. Spec. No. : HE200308 Issued Date : 2003.11.01 Revised Date : 2003.11.28 Page No. : 2/4 HBT139XE HSMC Product Specification Static Characteristics (Ta=25°C) RankSymbol Parameter Conditions V Unit VD=6V, RL=10Ω , T2+ G+ 25 mA VD=6V, RL=10Ω , T2+ G- 25 mA VD=6V, RL=10Ω , T2- G- 25 mAIGT Gate Trigger Current VD=6V, RL=10Ω , T2- G+ -m A VD=6V, RL=10Ω , T2+ G+ 20 mA VD=6V, RL=10Ω , T2+ G- 30 mA VD=6V, RL=10Ω , T2- G- 30 mAIL Latching Current VD=6V, RL=10Ω , T2- G+ -m A IH Holding Current VD=12V, IGT=0.1A 30 mA VT On-state Voltage IT=25A 1.5 V VD=6V, RL=10Ω , T2+ G+ 1.5 V VD=6V, RL=10Ω , T2+ G- 1.5 V VD=6V, RL=10Ω , T2- G- 1.5 VVGT Gate Trigger Voltage VD=6V, RL=10Ω , T2- G+ -V ID Off-state Leakage Current VD=VDRM 500 uA Static Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit dVD/dt Critical rate of rise of off-state voltage VDM=67% VDRM(max); Tj= 125°C; exponential waveform; gate open circuit -5 0- V / u s tgt Gate controlled turn-on time ITM=6A; VD=VDRM(max); IG=0.1A; dIG/dt=5A/us -2- u s Thermal Resistances Symbol Parameter Conditions Min. Typ. Max. Unit Rth j-mb Thermal resistance junction to mounting base Rth j-a Thermal resistance junction to ambient Full cycle Half cycle In free air 1.2 1.7 K/W K/W K/W

MICROELECTRONICS CORP. Spec. No. : HE200308 Issued Date : 2003.11.01 Revised Date : 2003.11.28 Page No. : 3/4 HBT139XE HSMC Product Specification Characteristics Curve Typical & Mmaximum On-State Characteristic VT/V IT/A typ 25ºC 125ºC Normalised Gate Trigger Current IGT(Ta)/IGT(25oC), Versus Junction Temperature Ta 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 20 40 60 80 100 120 140 Ta(oC) IGT/IGT(25 oC) T2+/G+ T2+/G- T2-/G- Normalised Gate Trigger Voltage VGT(Ta)/VGT(25oC), Versus Junction Temperature Ta 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 Ta(oC) VGT/VGT(25 oC) T2+/G+ T2-/G- Normalised Holding Current IH(Ta)/IH(25oC), Versus Junction Temperature Ta 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 Ta/( oC) IL/IL(25oC) Normalised Latching Current IL(Ta)/IL(25oC), Versus Junction Temperature Ta 0.5 1.5 2.5 0 25 50 75 100 125 150 Ta(oC) IL/IL(25 oC)

MICROELECTRONICS CORP. Spec. No. : HE200308 Issued Date : 2003.11.01 Revised Date : 2003.11.28 Page No. : 4/4 HBT139XE HSMC Product Specification TO-220AB Dimension *: Typical Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material:

  • Lead: 42 Alloy; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 A B E G I KM OP C N H D Tab Style: Pin 1. Main terminal 1 2. Main terminal 2 3. Gate Tab connected to main terminal 2 3-Lead TO-220AB Plastic Package Marking: Date Code Control Code H BT Rank Serial Code