HBT136AE HSMC | Alldatasheet

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MICROELECTRONICS CORP. Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 1/4 HBT136AE HSMC Product Specification HBT136AE TRIAC

Description

Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Quick Reference Data Symbol Parameter Max. Unit VDRM Repetitive peak off-state voltages 600 V IT(RMS) RMS on-state current 4 A ITSM Non-repetitive peak on-state current 25 A Pin Configuration Pin Description

1 Main terminal 1

2 Main terminal 2

G Limtiing Values Symbol Parameter Min. Max. Units VDRM Repetitive peak off-state voltages - 600 V IT(RMS) RMS on-state current - 4 A ITSM Non-repetitive peak on-state current - 25 A I2tI 2t for fusing - 3.1 A 2S Repetitive rate of rise of on-state current after triggering T2+ G+ -5 0 A / u s T2+ G- - 50 A/us T2- G- - 50 A/us dIT/dt T2- G+ - 10 A/us IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power - 0.5 W Tstg Storage Temperature Range - 150 °C Tj Operating junction temperature - 125 °C TO-220AB

MICROELECTRONICS CORP. Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 2/4 HBT136AE HSMC Product Specification Static Characteristics (Ta=25°C) HBT136AESymbol Parameter Conditions Min. Typ. Max. Unit VD=12V, IG=0.1A, T2+ G+ - 5 10 mA VD=12V, IG=0.1A, T2+ G- - 6 10 mA VD=12V, IG=0.1A, T2- G- - 6 10 mAIGT Gate Trigger Current VD=12V, IG=0.1A, T2- G+ - 18 25 mA VD=12V, IGT=0.1A, T2+ G+ - - 15 mA VD=12V, IGT=0.1A, T2+ G- - - 20 mA VD=12V, IGT=0.1A, T2- G- - - 15 mAIL Latching Current VD=12V, IGT=0.1A, T2- G+ - - 20 mA IH Holding Current V D=12V, IGT=0.1A - 6 15 mA VT On-state Voltage I T=5A - 1.4 1.70 V VGT Gate Trigger Voltage V D=12V, IT=0.1A - 0.8 1.5 V ID Off-state Leakage Current VD=VDRM -- 2 0 0 u A Static Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit dVD/dt Critical rate of rise of off-state voltage VDM=67% VDRM(max); Tj= 125°C; exponential waveform; gate open circuit -5 0- V / u s tgt Gate controlled turn- on time ITM=6A; VD=VDRM(max); IG=0.1A; dIG/dt=5A/us -2- u s Thermal Resistances Symbol Parameter Conditions Min. Typ. Max. Unit Rth j-mb Thermal resistance junction to mounting base Rth j-a Thermal resistance junction to ambient Full cycle Half cycle In free air 3.0 3.7 K/W K/W K/W

MICROELECTRONICS CORP. Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 3/4 HBT136AE HSMC Product Specification Characteristics Curve Normalised Gate Trigger Current IGT(Ta)/IGT(25oC), Versus Air Temperature Ta 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 20 40 60 80 100 120 140 Ta(oC) IGT/IGT(25 o T2+/G+ T2+/G- T2-/G- T2-/G+ Typical & Maximum On-State Characteristic VT/V IT/A typ 25ºC 125ºC Normalised Gate Trigger Voltage VGT(Ta)/VGT(25oC), Versus Air Temperature Ta 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 Ta(oC) VGT/VGT(25oC) T2+/G+ T2-/G- Normalised Holding Current IH(Ta)/IH(25oC), Versus Air Temperature Ta 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 Ta/(oC) IL/IL(25oC) Normalised Latching Current IL(Ta)/IL(25oC), Versus Air Temperature Ta 0.5 1.5 2.5 0 25 50 75 100 125 150 Ta(oC) IL/IL(25oC) Maximum On-State Dissipation, Ptot Versus Rms On-State Current, a=Conduction Angle IT(RMS)/A Ptot/w a=90º a=120º a=180º a a

MICROELECTRONICS CORP. Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 4/4 HBT136AE HSMC Product Specification TO-220AB Dimension *: Typical Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 A B E G I KM OP C N H D Tab Style: Pin 1. Main terminal 1 2. Main terminal 2 3. Gate Tab connected to main terminal 2 3-Lead TO-220AB Plastic Package Marking: Date Code Control Code HB T 136AE