HBN2411S6R CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
- Two BTC2411chips in a SOT-363 package.
- Mounting possible with SOT-323 automatic mounting machines.
- Transistor elements are independent, eliminating interference.
- Mounting cost and area can be cut in half.
- High IC(Max) . IC (Max) = 0.6A
- Low VCE(sat) , TYP. VCE(sat) = 0.2V at IC/IB = 500mA/50mA Optimal for low Voltage operation
- Complementary to HBP1036S6R Equivalent Circuit Outline The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 60 V Collector-Emitter V oltage V CEO 40 V Emitter-Base V oltage V EBO 6 V Collector Current I C 0.6 A Power Dissipation Pd 200(total) (Note) mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 150mW per element must not be exceeded. SOT-363R HBN2411S6R Tr1 Tr2
CYStech Electronics Corp. Spec. No. : C203S6R Issued Date : 2003.09.12 Revised Date : 2005.03.30 Page No. : 2/ 5 HBN2411S6R CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V I C=100µA BVCEO 40 - - V I C=1mA BVEBO 6 - - V I E=10µA ICEX - - 100 nA V CE=35V , VEB=0.4V *VCE(sat) 1 - - 0.4 V I C=150mA, IB=15mA *VCE(sat) 2 - 0.2 0.75 V I C=500mA, IB=50mA *VBE(sat) 1 - - 0.95 V I C=150mA, IB=15mA *VBE(sat) 2 - - 1.2 V I C=500mA, IB=50mA hFE 1 20 - - V CE=1V , IC=100µA hFE 2 40 - - V CE=1V , IC=1mA *hFE 3 80 - - V CE=1V , IC=10mA *hFE 4 82 - 390 V CE=1V , IC=150mA *hFE 5 40 - - V CE=2V , IC=500mA fT - 250 - MHz V CE=5V , IC=20mA, f=100MHz Cob - 6 - pF V CB=5V , f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
CYStech Electronics Corp. Spec. No. : C203S6R Issued Date : 2003.09.12 Revised Date : 2005.03.30 Page No. : 3/ 5 HBN2411S6R CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current ---I C(mA) Current Gain---HFE HFE@VCE=3V Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current ---I C(mA) Saturation Voltage---(mV) VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current--- I C(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 0.1 1 10 100 Collector Current---I C(mA) Cutoff Frequency---F T(GHZ) FT@VCE=5V Power Derating Curves 100 150 200 250 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) Power Dissipation---PD(mW) dual single
CYStech Electronics Corp. Spec. No. : C202S6R Issued Date : 2003.06.11 Revised Date : 2004.11.04 Page No. : 4/5 HBN2412S6R CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C202S6R Issued Date : 2003.06.11 Revised Date : 2004.11.04 Page No. : 5/5 HBN2412S6R CYStek Product Specification SOT-363R Dimension *:Typical H - 0.004 - 0.1 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :
- Lead : 42 Alloy ; solder plating
- Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
- CYStek reserves the right to make changes to its products without notice.
- CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: