HBNZ6056N6 CYSTEKEC | Alldatasheet

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Technical content

Features

N PN chip and a Zener diode chip in a SOT 6L package. Mounting possible with SOT 23 automatic mounting machines. Pb free lead plating package. Equiva lent Circuit Outline

Ordering Information

G SOT Pb free lead plating and halogen free package 3000 pcs / tape & reel HBN Z6056 S O T B : Base E : Emitter C : Collector A : Anode K : Cathode NC : Not Connected A B C K NC E Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 p cs / tape & reel, 7 reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C Issued Date : 20 Revised Date : Page No. : HBN Z6056 CYSte k Product Speci fication Absolute Maximum Ratings (Ta=25 , NPN Transistor Parameter Symbol Value Unit Collector Base V oltage V CBO V Collector Emitter V oltage V CEO V Emitter Base V oltage V EBO V Collector Current (DC) I C 600 m A Peak Collector Current I CP 1.2 A Peak Base Current I BP mA Absolute Maximum Ratings (Ta=25 C), Zener Diode Parameter Symbol Value Unit Forward V oltage @ I F =10mA V F 0.9 V Thermal Characteristics Characteristics Symbol Value Unit Power Dissipa tion P D (Note) mW Thermal Resistance, Junction to Ambient, max R θJA 417 (Note) C/W Operating Junction and Storage Temperature Tj , Tstg 55~+150 C Note : .Surface mounted on minimum copper pad

CYStech Electronics Corp. Spec. No. : C Issued Date : 20 Revised Date : Page No. : HBN Z6056 CYSte k Product Speci fication NPN Trans istor

Electrical Characteristics

j =25 C , unless otherwise specified Symbol Min. Typ. Max. Unit Test Conditions BV CBO V I C =10μA BV CEO V I C =10mA BV EBO V I E =10μA I CBO nA V CB =60V I CEX nA V CE =60V , V EB I EBO 100 nA V EB =6V CE(sat) 0.3 V I C =150mA, I B =15mA CE(sat) 0.5 V I C =500mA, I B =50mA BE(sat) 0.95 V I C =150mA, I B =15mA BE(sat) V I C =500mA, I B =50mA h FE V CE =1V , I C =100μA h FE V CE =1V , I C =1mA h FE V CE =1V , I C =10mA FE 100 300 V CE =1V , I C =150mA FE V CE V , I C 0mA f T 300 MHz V CE =20V , I C =20mA, f=100MHz Cob pF V CB =10V , f=1MHz Zener Diode j =25 C , unless otherwise specified Symbol Min. Typ. Max. Uni t Test Conditions V Z 5.49 5.73 V I ZT A V F 0.9 V I F =10mA Z ZK Ω I Z 0.5 mA Z ZT Ω I Z A I R μ A V R V C pF V R =0V , f=1MHz *Pulse Test: Pulse Width 380μs, Duty Cycle Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C Issued Date : 20 Revised Date : Page No. : HBN Z6056 CYSte k Product Speci fication NPN Transistor Typical Characteristics Emitter Grounded Output Characteristics 0.05 0.1 0.15 0.2 0.25 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 200uA 300uA 400uA 500uA 1mA IB=100uA Emitter Grounded Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 1mA 1.5mA 2mA 2.5mA 5mA IB=500uA Current Gain vs Collector Current 100 1000 100 1000 Collector Current---IC(mA) Current Gain---HFE Ta=25°C Ta=75°C Ta=125°C VCE=1V Current Gain vs Collector Current 100 1000 100 1000 Collector Current---IC(mA) Current Gain---HFE Ta=25°C Ta=75°C Ta=125°C VCE=2V Current Gain vs Collector Current 100 1000 100 1000 Collector Current---IC(mA) Current Gain---HFE Ta=25°C Ta=75°C Ta=125°C VCE=10V Saturation Voltage vs Collector Current 100 1000 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) 125°C 75°C 25°C VCESAT=10IB

CYStech Electronics Corp. Spec. No. : C Issued Date : 20 Revised Date : Page No. : HBN Z6056 CYSte k Product Speci fication NPN Transistor Typical Characteristics (Cont.) Saturation Voltage vs Collector Current 100 1000 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) 125°C 75°C 25°C VCESAT=20IB Saturation Voltage vs Collector Current 100 1000 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) 125°C 75°C 25°C VCESAT=38IB Saturation Voltage vs Collector Current 100 1000 10000 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VBESAT@IC=10IB Ta=25°C Ta=75°C 125°C On Voltage vs Collector Current 100 1000 10000 100 1000 Collector Current---IC(mA) On Voltage---(mV) VBEON@VCE=10V 125°C 25°C 75°C Capacitance vs Reverse-biased Voltage 100 0.1 100 Reverse-biased Voltage---VR(V) Capacitance---(pF) Cib Cob Transition Frequency vs Collector Current 100 1000 100 1000 Collector Current---IC(mA) Transition Frequency---fT(MHz) VCE=5V

CYStech Electronics Corp. Spec. No. : C Issued Date : 20 Revised Date : Page No. : HBN Z6056 CYSte k Product Speci fication Zener Diode Typical Characteristics Forward Current vs Forward Voltage 100 1000 0.2 0.4 0.6 0.8 1.2 1.4 Forward Voltage---V F (V) Forward Current---I F (mA) Pulse width=300 μ 1% Duty cycle Tj=25°C -40°C 25°C 75°C 125°C Reverse Leakage Current vs Reverse Voltage 1000 2000 3000 4000 5000 6000 Reverse Voltage---V R (V) Reverse Leakage Current---I R μ Tj=25℃ Power Derating Curve 100 150 200 250 300 350 100 150 200 Case Temperature---TC(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C Issued Date : 20 Revised Date : Page No. : HBN Z6056 CYSte k Product Speci fication Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C Issued Date : 20 Revised Date : Page No. : HBN Z6056 CYSte k Product Speci fication Recommended wave soldering condition Product Peak Temperature Soldering Time Pb free devices 260 +0/ C 5 +1/ 1 seconds Recommended temperature profile for IR reflow Profile feature Sn Pb eutectic Assembly Pb free Assembly Average ramp up rate (Tsmax to Tp) C /second max. C /second max. Preheat Temperature Min(T S min) Temperature Max(T S max) Time(ts min to ts max 100 C 150 C 120 seconds 150 C 200 C 180 seconds Time maintained above: Temperature (T L Time (t L 183 C 150 seconds 217 C 150 seconds Peak Temperature(T P 240 +0/ C 260 +0/ C Time within 5 C of actual peak temperature(tp) 30 seconds 40 seconds Ramp down rate C /second max. C /second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of th e package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C Issued Date : 20 Revised Date : Page No. : HBN Z6056 CYSte k Product Speci fication SOT L Dimension Millimeters Inches Millimeters Inches DIM Min. Max. Min. Max. DIM Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 E 1.500 1.700 0.059 0.067 A 000 0.1 0.000 0.004 2.650 2.950 .104 0.1 A 1.050 1.150 0.041 0.045 e 950 (BSC) 037 (BSC) b 0.300 500 0.012 0.020 1.800 2.000 0.071 0.079 c 0.100 200 0.004 008 L 0.300 0.600 0.012 0.024 D 2.820 3.020 0.111 119 θ Notes : Control ling dimension : millimeters. Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYSte k sales office. Material : Lead : Pure tin plated. Mold Compound : Epoxy resin family, flammability solid burning class:UL94V Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior writ ten approval of CYStek. CYSte k reserves the right to make changes to its products without notice. CYSte k semiconductor products are not warranted to be suitable for use in Life Support Applications, or systems. CYSte k assumes no liability for any con sequence of customer product design, infringement of patents, or application assistance. Marking: Lead SOT Plastic Surface Mounted Package CYSte k Package Code: N N Z Style: Pin 1. Anode A Pin 2. Base (B) Pin 3. Collector (C) Pin 4. Emitter (E) Pin 5. No t connected NC Pin 6. C athode Device Code XX Date Code