HBN2222S6R CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Two BTN2222A chips in a SOT-363R package.
  • Mounting possible with SOT-323 automatic mounting machines.
  • Transistor elements are independent, eliminating interference.
  • Mounting cost and area can be cut in half. Equivalent Circuit Outline The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 75 V Collector-Emitter V oltage V CEO 40 V Emitter-Base V oltage V EBO 6 V Collector Current I C 600 mA Power Dissipation Pd 300(total) *1 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1 200mW per element must not be exceeded SOT-363R HBN2222S6R Tr1 Tr2

CYStech Electronics Corp. Spec. No. : C227S6R Issued Date : 2003.08.29 Revised Date : Page No. : 2/4 HBN2222S6R CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 75 - - V I C=10µA BVCEO 40 - - V I C=10mA BVEBO 6 - - V I E=10µA ICBO - - 10 nA V CB=60V ICEX - - 10 nA V CB=60V , VEB(off) = 3V IEBO - - 100 nA V EB=3V *VCE(sat) 1 - - 0.3 V I C=150mA, IB=15mA *VCE(sat) 2 - - 1.0 V I C=500mA, IB=50mA *VBE(sat) 1 - - 1.2 V I C=150mA, IB=15mA *VBE(sat) 2 - - 2.0 V I C=500mA, IB=50mA *hFE 1 35 - - - V CE=10V , IC=100µA *hFE 2 50 - - - V CE=10V , IC=1mA *hFE 3 75 - - - V CE=10V , IC=10mA *hFE 4 100 - 300 - V CE=10V , IC=150mA *hFE 5 50 - - - V CE=1V , IC=150mA *hFE 6 40 - - - V CE=10V , IC=500mA fT 300 - - MHz V CE=20V , IC=20mA, f=100MHz Cob - - 8 pF V CB=10V , f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C227S6R Issued Date : 2003.08.29 Revised Date : Page No. : 3/4 HBN2222S6R CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE VCE=1V VCE=10V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 100 1000 1 10 100 Collector Current---IC(mA) Cutoff Frequency---fT(MHz) VCE=20V Power Derating Curves 100 150 200 250 300 350 0 50 100 150 200 Ambient Temperature---T A(℃) Power Dissipation---PD(mW) Dual Single

CYStech Electronics Corp. Spec. No. : C227S6R Issued Date : 2003.08.29 Revised Date : Page No. : 4/4 HBN2222S6R CYStek Product Specification SOT-363R Dimension *:Typical H - 0.004 - 0.1 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : 42 Alloy ; solder plating
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 1PR