HBN1803M65

HBN1803M65 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 1/7 HBN1803M65 CYStek Product Specification Octuple High Voltage NPN Epitaxial Planar Transistor HBN1803M65

Description

• High breakdown voltage. (BVCEO=400V)
• Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA.
• Complementary to HBP1804M65
• Pb-free lead plating and halogen-free package Equivalent Circuit Outline MISWB6×5-18L-A Bottom ViewTop View HBN1803M65

CYStech Electronics Corp. Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 2/7 HBN1803M65 CYStek Product Specification The following ratings and characteristics apply to each transistor in this device. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 500 V Collector-Emitter V oltage VCEO 400 V Emitter-Base V oltage VEBO 5 V Collector Current IC 300 mA Total Power Dissipation Pd 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 500 - - V IC=50μA BVCEO 400 - - V IC=1mA BVEBO 5 - - V IE=50μA ICBO - - 100 nA VCB=500V ICES - - 100 nA VCE=300V , REB=0Ω IEBO - - 100 nA VEB=5V *VCE(sat) - 0.12 0.18 V IC=20mA, IB=1mA *VCE(sat) - 0.12 0.18 V IC=50mA, IB=5mA *VCE(sat) - 0.13 0.3 V IC=100mA, IB=20mA *VBE(sat) - 0.72 1 V IC=20mA, IB=2mA *hFE 50 - 300 - VCE=10V , IC=10mA *hFE 50 - - - VCE=10V , IC=100mA fT - 100 - MHz VCE=10V , IC=10mA, f=5MHz Cob - 3.9 - pF VCB=10V , IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 3/7 HBN1803M65 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0123456 VCE, Collector-to-Emitter Voltage(V) IC, Collector Current(A) IB=0 IB=100uA IB=200uA IB=300uA IB=1mA IB=500uA Emitter Grounded Output Characteristics 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0123456 VCE, Collector-to-Emitter Voltage(V) IC, Collector Current(A) IB=0 IB=500uA IB=1mA IB=1.5mA IB=5mA IB=2.5mA Current Gain vs Collector Current 100 1000 1 10 100 1000 IC, Collector Current(mA) HFE, Current Gain VCE=5V Ta=125°C 75°C 25°C -40°C Current Gain vs Collector Current 100 1000 1 10 100 1000 IC, Collector Current(mA) HFE, Current Gain VCE=10V Ta=125°C 75°C 25°C -40°C Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 IC, Collector Current(mA) Saturation Voltage(mV) Ta=125°C 75°C 25°C -40°C VCE(SAT) @ IC=10IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 IC, Collector Current(mA) Saturation Voltage(mV) Ta=125°C 75°C 25°C -40°C VCE(SAT) @ IC=20IB

CYStech Electronics Corp. Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 4/7 HBN1803M65 CYStek Product Specification Typical Characteristics(Cont.) Saturation Voltage vs Collector Current 100 1000 10000 100000 1 10 100 1000 IC, Collector Current(mA) Saturation Voltage(mV) Ta=125°C 75°C 25°C -40°C VCE(SAT) @ IC=50IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 IC, Collector Current(mA) Saturation Voltage(mV) Ta= -40°C 25°C 75°C 125°C VBE(SAT) @ IC=10IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 IC, Collector Current(mA) Saturation Voltage(mV) Ta=-40°C 25°C 75°C 125°C VBE(SAT) @ IC=20IB On Voltage vs Collector Current 100 1000 1 10 100 1000 IC, Collector Current(mA) On Voltage(mV) VBE(ON)@VCE=10V Ta=-40°C 25°C 75°C 125°C Capacitance vs Reverse-Biased Voltage 100 1000 0.1 1 10 100 Reverse-Biased Voltage(V) Capacitance(pF) Cob Cib Power Derating Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 50 100 150 200 TA, Ambient Temperature(℃) PD, Power Dissipation(W)

CYStech Electronics Corp. Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 5/7 HBN1803M65 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 6/7 HBN1803M65 CYStek Product Specification Recommended wave solderiRecommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 7/7 HBN1803M65 CYStek Product Specification MISWB6×5-18L-A Dimension Marking: 18-Lead MISWB6×5-18L-A Plastic Surface Mounted Package CYStek Package Code: M65 Date Code Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.